GB1577492A - Photohardenable elements - Google Patents
Photohardenable elements Download PDFInfo
- Publication number
- GB1577492A GB1577492A GB20317/78A GB2031778A GB1577492A GB 1577492 A GB1577492 A GB 1577492A GB 20317/78 A GB20317/78 A GB 20317/78A GB 2031778 A GB2031778 A GB 2031778A GB 1577492 A GB1577492 A GB 1577492A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- stratum
- photohardenable
- solvent
- strata
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
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- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical class OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
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- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
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- 229910052744 lithium Inorganic materials 0.000 description 2
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- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- GBOJZXLCJZDBKO-UHFFFAOYSA-N 2-(2-chlorophenyl)-2-[2-(2-chlorophenyl)-4,5-diphenylimidazol-2-yl]-4,5-diphenylimidazole Chemical compound ClC1=CC=CC=C1C1(C2(N=C(C(=N2)C=2C=CC=CC=2)C=2C=CC=CC=2)C=2C(=CC=CC=2)Cl)N=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=N1 GBOJZXLCJZDBKO-UHFFFAOYSA-N 0.000 description 1
- ZTISORAUJJGACZ-UHFFFAOYSA-N 2-[(2-methoxy-4-nitrophenyl)diazenyl]-n-(2-methoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC=CC=C1NC(=O)C(C(C)=O)N=NC1=CC=C([N+]([O-])=O)C=C1OC ZTISORAUJJGACZ-UHFFFAOYSA-N 0.000 description 1
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- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
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- AUNAPVYQLLNFOI-UHFFFAOYSA-L [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O Chemical compound [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O AUNAPVYQLLNFOI-UHFFFAOYSA-L 0.000 description 1
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- 229910052783 alkali metal Inorganic materials 0.000 description 1
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- 229910052786 argon Inorganic materials 0.000 description 1
- VUEDNLCYHKSELL-UHFFFAOYSA-N arsonium Chemical compound [AsH4+] VUEDNLCYHKSELL-UHFFFAOYSA-N 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- FWXDJLWIMSYZNW-UHFFFAOYSA-M benzyl(dimethyl)sulfanium;hydroxide Chemical class [OH-].C[S+](C)CC1=CC=CC=C1 FWXDJLWIMSYZNW-UHFFFAOYSA-M 0.000 description 1
- WFVBAZAZTCJLPC-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone bis(2-hydroxy-4-methoxyphenyl)methanone (2-hydroxy-4-methoxyphenyl)-phenylmethanone Chemical compound OC1=C(C(=O)C2=C(C=C(C=C2)O)O)C=CC(=C1)O.OC1=C(C(=O)C2=C(C=C(C=C2)OC)O)C=CC(=C1)OC.OC1=C(C(=O)C2=CC=CC=C2)C=CC(=C1)OC WFVBAZAZTCJLPC-UHFFFAOYSA-N 0.000 description 1
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- QSPOZCCMTQOJJV-UHFFFAOYSA-N ethyl 2-cyano-3,3-diphenylprop-2-enoate;2-ethylhexyl 2-cyano-3,3-diphenylprop-2-enoate Chemical compound C=1C=CC=CC=1C(=C(C#N)C(=O)OCC)C1=CC=CC=C1.C=1C=CC=CC=1C(=C(C#N)C(=O)OCC(CC)CCCC)C1=CC=CC=C1 QSPOZCCMTQOJJV-UHFFFAOYSA-N 0.000 description 1
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
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- 238000003384 imaging method Methods 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
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- QVGXLLKOCUKJST-BJUDXGSMSA-N oxygen-15 atom Chemical compound [15O] QVGXLLKOCUKJST-BJUDXGSMSA-N 0.000 description 1
- WYMSBXTXOHUIGT-UHFFFAOYSA-N paraoxon Chemical compound CCOP(=O)(OCC)OC1=CC=C([N+]([O-])=O)C=C1 WYMSBXTXOHUIGT-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- ATGAWOHQWWULNK-UHFFFAOYSA-I pentapotassium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical class [K+].[K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O ATGAWOHQWWULNK-UHFFFAOYSA-I 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
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- 239000010970 precious metal Substances 0.000 description 1
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- 150000003839 salts Chemical class 0.000 description 1
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- 159000000000 sodium salts Chemical class 0.000 description 1
- MLVYOYVMOZFHIU-UHFFFAOYSA-M sodium;4-[(4-anilinophenyl)diazenyl]benzenesulfonate Chemical compound [Na+].C1=CC(S(=O)(=O)[O-])=CC=C1N=NC(C=C1)=CC=C1NC1=CC=CC=C1 MLVYOYVMOZFHIU-UHFFFAOYSA-M 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
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- HISNRBVYBOVKMB-UHFFFAOYSA-N stibonium Chemical compound [SbH4+] HISNRBVYBOVKMB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LPSWFOCTMJQJIS-UHFFFAOYSA-N sulfanium;hydroxide Chemical class [OH-].[SH3+] LPSWFOCTMJQJIS-UHFFFAOYSA-N 0.000 description 1
- CXVGEDCSTKKODG-UHFFFAOYSA-N sulisobenzone Chemical compound C1=C(S(O)(=O)=O)C(OC)=CC(O)=C1C(=O)C1=CC=CC=C1 CXVGEDCSTKKODG-UHFFFAOYSA-N 0.000 description 1
- CRUVUWATNULHFA-UHFFFAOYSA-M tetramethylphosphanium;hydroxide Chemical compound [OH-].C[P+](C)(C)C CRUVUWATNULHFA-UHFFFAOYSA-M 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical class [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical class [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
- G03F7/0955—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer one of the photosensitive systems comprising a non-macromolecular photopolymerisable compound having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/797,832 US4123272A (en) | 1977-05-17 | 1977-05-17 | Double-negative positive-working photohardenable elements |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1577492A true GB1577492A (en) | 1980-10-22 |
Family
ID=25171914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB20317/78A Expired GB1577492A (en) | 1977-05-17 | 1978-05-17 | Photohardenable elements |
Country Status (6)
Country | Link |
---|---|
US (1) | US4123272A (enrdf_load_stackoverflow) |
JP (1) | JPS5417719A (enrdf_load_stackoverflow) |
BE (1) | BE867154A (enrdf_load_stackoverflow) |
DE (1) | DE2821053C3 (enrdf_load_stackoverflow) |
FR (1) | FR2391491A1 (enrdf_load_stackoverflow) |
GB (1) | GB1577492A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2152223A (en) * | 1983-11-28 | 1985-07-31 | Fusion Semiconductor Systems | Process for imaging resist materials |
GB2171221A (en) * | 1985-02-19 | 1986-08-20 | Stc Plc | Improvements in integrated circuits |
GB2291207A (en) * | 1994-07-14 | 1996-01-17 | Hyundai Electronics Ind | Method for forming deep resist patterns |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1127340A (en) * | 1977-12-30 | 1982-07-06 | Kohtaro Nagasawa | Photocurable light-sensitive composition and material |
US4311784A (en) * | 1978-05-09 | 1982-01-19 | E. I. Du Pont De Nemours And Company | Multilayer photosensitive solvent-processable litho element |
US4329410A (en) * | 1979-12-26 | 1982-05-11 | The Perkin-Elmer Corporation | Production of X-ray lithograph masks |
US4357416A (en) * | 1980-04-21 | 1982-11-02 | E. I. Du Pont De Nemours And Company | Process for preparation of multilayer photosensitive solvent-processable litho element |
US4472494A (en) * | 1980-09-15 | 1984-09-18 | Napp Systems (Usa), Inc. | Bilayer photosensitive imaging article |
US4362809A (en) * | 1981-03-30 | 1982-12-07 | Hewlett-Packard Company | Multilayer photoresist process utilizing an absorbant dye |
US4504566A (en) * | 1982-11-01 | 1985-03-12 | E. I. Du Pont De Nemours And Company | Single exposure positive contact multilayer photosolubilizable litho element with two quinone diazide layers |
JPS6199151A (ja) * | 1984-10-08 | 1986-05-17 | Sanyo Kokusaku Pulp Co Ltd | 画像形成方法 |
JPH0762761B2 (ja) * | 1986-03-28 | 1995-07-05 | 富士写真フイルム株式会社 | 画像形成材料 |
US4863827A (en) * | 1986-10-20 | 1989-09-05 | American Hoechst Corporation | Postive working multi-level photoresist |
DE4018427A1 (de) * | 1990-06-14 | 1992-01-16 | Samsung Electronics Co Ltd | Fotolitographie-verfahren zur ausbildung eines feinlinigen musters |
JP3859182B2 (ja) * | 1997-03-27 | 2006-12-20 | 東京応化工業株式会社 | ネガ型ホトレジスト組成物 |
US5922509A (en) * | 1998-03-18 | 1999-07-13 | Morton International, Inc. | Photoimageable compositions having improved stripping properties in aqueous alkaline solutions |
JP2000315647A (ja) * | 1999-05-06 | 2000-11-14 | Mitsubishi Electric Corp | レジストパターン形成方法 |
US8343707B2 (en) | 2005-07-29 | 2013-01-01 | Anocoil Corporation | Lithographic printing plate for in-solidus development on press |
US7816065B2 (en) * | 2005-07-29 | 2010-10-19 | Anocoil Corporation | Imageable printing plate for on-press development |
US8137897B2 (en) * | 2005-07-29 | 2012-03-20 | Anocoil Corporation | Processless development of printing plate |
US8133658B2 (en) * | 2005-07-29 | 2012-03-13 | Anocoil Corporation | Non-chemical development of printing plates |
US8377630B2 (en) * | 2005-07-29 | 2013-02-19 | Anocoil Corporation | On-press plate development without contamination of fountain fluid |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL245513A (enrdf_load_stackoverflow) * | 1959-01-23 | |||
US3615435A (en) * | 1968-02-14 | 1971-10-26 | Du Pont | Photohardenable image reproduction element with integral pigmented layer and process for use |
NL168054C (nl) * | 1969-02-01 | Basf Ag | Werkwijze voor het vervaardigen van reliefvormen, alsmede een vast, fotopolymeriseerbaar element, vervaardigd met toepassing van deze werkwijze. | |
US3808004A (en) * | 1969-05-29 | 1974-04-30 | Richardson Graphic Co | Lithographic plate and photoresist having two photosensitive layers |
CA947562A (en) * | 1970-07-08 | 1974-05-21 | National Cash Register Company (The) | Manufacture of printing elements by a photoresist chemical etching system |
CA993709A (en) * | 1971-01-21 | 1976-07-27 | Leo Roos | Composite, mask-forming photohardenable elements |
BE789476A (fr) * | 1971-10-01 | 1973-03-29 | Basf Ag | Procede de preparation de cliches |
US3761264A (en) * | 1971-10-12 | 1973-09-25 | Rca Corp | Method of defining a detailed pattern on a surface of a body |
US3787211A (en) * | 1971-12-10 | 1974-01-22 | Basf Ag | Makeready foil for relief printing |
US3849136A (en) * | 1973-07-31 | 1974-11-19 | Ibm | Masking of deposited thin films by use of a masking layer photoresist composite |
JPS50129202U (enrdf_load_stackoverflow) * | 1974-04-05 | 1975-10-23 |
-
1977
- 1977-05-17 US US05/797,832 patent/US4123272A/en not_active Expired - Lifetime
-
1978
- 1978-05-13 DE DE2821053A patent/DE2821053C3/de not_active Expired
- 1978-05-16 FR FR7814424A patent/FR2391491A1/fr active Granted
- 1978-05-17 GB GB20317/78A patent/GB1577492A/en not_active Expired
- 1978-05-17 JP JP5768978A patent/JPS5417719A/ja active Granted
- 1978-05-17 BE BE187759A patent/BE867154A/xx not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2152223A (en) * | 1983-11-28 | 1985-07-31 | Fusion Semiconductor Systems | Process for imaging resist materials |
GB2171221A (en) * | 1985-02-19 | 1986-08-20 | Stc Plc | Improvements in integrated circuits |
GB2291207A (en) * | 1994-07-14 | 1996-01-17 | Hyundai Electronics Ind | Method for forming deep resist patterns |
GB2291207B (en) * | 1994-07-14 | 1998-03-25 | Hyundai Electronics Ind | Method for forming resist patterns |
US5989788A (en) * | 1994-07-14 | 1999-11-23 | Hyundai Electronics Industries Co., Ltd. | Method for forming resist patterns having two photoresist layers and an intermediate layer |
Also Published As
Publication number | Publication date |
---|---|
JPS6130253B2 (enrdf_load_stackoverflow) | 1986-07-12 |
DE2821053B2 (de) | 1981-03-19 |
DE2821053C3 (de) | 1983-12-22 |
US4123272A (en) | 1978-10-31 |
FR2391491A1 (fr) | 1978-12-15 |
JPS5417719A (en) | 1979-02-09 |
BE867154A (fr) | 1978-11-17 |
FR2391491B1 (enrdf_load_stackoverflow) | 1980-06-13 |
DE2821053A1 (de) | 1978-11-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19970517 |