GB1573320A - Electrophopretic deposition of inorganic films - Google Patents

Electrophopretic deposition of inorganic films Download PDF

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Publication number
GB1573320A
GB1573320A GB20199/76A GB2019976A GB1573320A GB 1573320 A GB1573320 A GB 1573320A GB 20199/76 A GB20199/76 A GB 20199/76A GB 2019976 A GB2019976 A GB 2019976A GB 1573320 A GB1573320 A GB 1573320A
Authority
GB
United Kingdom
Prior art keywords
film
preparation
solar cell
film according
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20199/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial Chemical Industries Ltd
Original Assignee
Imperial Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial Chemical Industries Ltd filed Critical Imperial Chemical Industries Ltd
Priority to GB20199/76A priority Critical patent/GB1573320A/en
Priority to DE19772722045 priority patent/DE2722045A1/de
Priority to FR7714989A priority patent/FR2352078A1/fr
Priority to IT23623/77A priority patent/IT1143661B/it
Priority to NL7705384A priority patent/NL7705384A/xx
Priority to BE177686A priority patent/BE854762A/xx
Priority to JP5698677A priority patent/JPS52155994A/ja
Priority to CA278,634A priority patent/CA1086682A/en
Priority to AU25197/77A priority patent/AU509321B2/en
Priority to ES458847A priority patent/ES458847A1/es
Priority to ES469346A priority patent/ES469346A1/es
Priority to US06/031,874 priority patent/US4225408A/en
Publication of GB1573320A publication Critical patent/GB1573320A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/169—Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3224—Materials thereof being Group IIB-VIA semiconductors
    • H10P14/3228—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3432—Tellurides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB20199/76A 1976-05-17 1976-05-17 Electrophopretic deposition of inorganic films Expired GB1573320A (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
GB20199/76A GB1573320A (en) 1976-05-17 1976-05-17 Electrophopretic deposition of inorganic films
DE19772722045 DE2722045A1 (de) 1976-05-17 1977-05-16 Verfahren zur herstellung duenner halbleiterschichten und -laminate sowie von solarzellen und danach erhaltene schichten, laminate und bauelemente, insbesondere solarzellen
FR7714989A FR2352078A1 (fr) 1976-05-17 1977-05-16 Procede de preparation de films sans piqure pour piles solaires
IT23623/77A IT1143661B (it) 1976-05-17 1977-05-16 Metodo per la preparazione di pellicole semiconduttrici e prodotti comprendenti tali pellicole
NL7705384A NL7705384A (nl) 1976-05-17 1977-05-16 Werkwijze voor de vervaardiging van een dunne, nagenoeg pinhole-vrije film.
BE177686A BE854762A (fr) 1976-05-17 1977-05-17 Procede pour preparer des pellicules inorganiques
JP5698677A JPS52155994A (en) 1976-05-17 1977-05-17 Method of producing thin film and solar battery
CA278,634A CA1086682A (en) 1976-05-17 1977-05-17 Preparation of semiconducting films of sulphide, sulphorelemide, selenide or telluride for solar cells
AU25197/77A AU509321B2 (en) 1976-05-17 1977-05-17 Electrophoretic production of semiconductor films
ES458847A ES458847A1 (es) 1976-05-17 1977-05-17 Procedimiento de obtencion de una pelicula fina sustancial- mente libre de picaduras.
ES469346A ES469346A1 (es) 1976-05-17 1978-05-02 Procedimiento de obtencion de una celula solar
US06/031,874 US4225408A (en) 1976-05-17 1979-04-18 Process for electrolytically preparing a semiconducting film on a flexible substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB20199/76A GB1573320A (en) 1976-05-17 1976-05-17 Electrophopretic deposition of inorganic films

Publications (1)

Publication Number Publication Date
GB1573320A true GB1573320A (en) 1980-08-20

Family

ID=10142064

Family Applications (1)

Application Number Title Priority Date Filing Date
GB20199/76A Expired GB1573320A (en) 1976-05-17 1976-05-17 Electrophopretic deposition of inorganic films

Country Status (11)

Country Link
US (1) US4225408A (enExample)
JP (1) JPS52155994A (enExample)
AU (1) AU509321B2 (enExample)
BE (1) BE854762A (enExample)
CA (1) CA1086682A (enExample)
DE (1) DE2722045A1 (enExample)
ES (2) ES458847A1 (enExample)
FR (1) FR2352078A1 (enExample)
GB (1) GB1573320A (enExample)
IT (1) IT1143661B (enExample)
NL (1) NL7705384A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2117796A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2861418D1 (en) * 1977-11-15 1982-01-28 Ici Plc A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films
WO1979000992A1 (en) * 1978-04-27 1979-11-29 Nat Res Dev Photochemical electrode
US4584074A (en) * 1982-12-07 1986-04-22 International Standard Electric Corporation Capacitors
DE3328899C2 (de) * 1983-08-10 1985-07-11 Nukem Gmbh, 6450 Hanau Photovoltaische Zelle
US4695356A (en) * 1984-01-26 1987-09-22 Andromaque S.A. Electrochemical procedure for the direct forming of generally thin elements with various contours and surfaces of usual and technical ceramics or refractory material
US4952446A (en) * 1986-02-10 1990-08-28 Cornell Research Foundation, Inc. Ultra-thin semiconductor membranes
GB8715082D0 (en) * 1987-06-26 1987-08-05 Prutec Ltd Solar cells
AU3136793A (en) * 1991-11-27 1993-06-28 Minnesota Mining And Manufacturing Company Electrophoretic deposition of transition metal dichalcogenides
US5498270A (en) * 1994-09-12 1996-03-12 Smith; Strom W. Sulfur trap
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6965196B2 (en) * 1997-08-04 2005-11-15 Lumimove, Inc. Electroluminescent sign
US6268014B1 (en) 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US20010042329A1 (en) * 2000-04-13 2001-11-22 Matthew Murasko Electroluminescent sign
SE519287C2 (sv) * 2000-08-31 2003-02-11 Ericsson Telefon Ab L M Inkapslat mönsterkort med sekventiellt uppbyggd ledningsmönster och tillverkningsförfarande
WO2002077953A1 (en) * 2001-03-21 2002-10-03 Lumimove, Inc. Illuminated display system
US7048400B2 (en) * 2001-03-22 2006-05-23 Lumimove, Inc. Integrated illumination system
US6811895B2 (en) * 2001-03-22 2004-11-02 Lumimove, Inc. Illuminated display system and process
AU2002345988A1 (en) * 2001-06-27 2003-03-03 Lumimove, Inc. Electroluminescent panel having controllable transparency
US20030159941A1 (en) * 2002-02-11 2003-08-28 Applied Materials, Inc. Additives for electroplating solution
CN1830753A (zh) * 2005-03-10 2006-09-13 清华大学 碳纳米管组装方法和碳纳米管器件
CN1840465B (zh) * 2005-03-30 2010-09-29 清华大学 一维纳米材料器件制造方法
CN100572260C (zh) * 2005-03-31 2009-12-23 清华大学 一维纳米材料器件的制造方法
US8748216B2 (en) 2010-10-25 2014-06-10 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
US8409906B2 (en) 2010-10-25 2013-04-02 Imra America, Inc. Non-vacuum method for fabrication of a photovoltaic absorber layer
TWI451580B (zh) * 2011-09-26 2014-09-01 Ind Tech Res Inst 薄膜太陽能電池之製法
FR2981952B1 (fr) * 2011-11-02 2015-01-02 Fabien Gaben Procede de realisation de couches minces denses par electrophorese
WO2014025743A1 (en) 2012-08-07 2014-02-13 Cornell University Binder free and carbon free nanoparticle containing component, method and applications
FR3080957B1 (fr) 2018-05-07 2020-07-10 I-Ten Electrodes mesoporeuses pour dispositifs electrochimiques en couches minces
CN114672865B (zh) * 2022-04-26 2024-08-09 昆明理工大学 一种CNTs/Cu复合板材的制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2851408A (en) * 1954-10-01 1958-09-09 Westinghouse Electric Corp Method of electrophoretic deposition of luminescent materials and product resulting therefrom
DE1171995B (de) * 1962-02-08 1964-06-11 Ibm Deutschland Verfahren zum Aufbringen von Fotoelementen auf nichtleitende Traeger
DE1496879A1 (de) * 1964-07-21 1969-08-14 Licentia Gmbh Verfahren zur elektrophoretischen Abscheidung von Nickelseleniden
US3879276A (en) * 1974-04-10 1975-04-22 Int Standard Electric Corp Electrophoretic deposition of selenium
US4011149A (en) * 1975-11-17 1977-03-08 Allied Chemical Corporation Photoelectrolysis of water by solar radiation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2117796A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Forming ceramic layers; dielectric structures
GB2117795A (en) * 1982-04-06 1983-10-19 Standard Telephones Cables Ltd Fabricating capacitors; forming ceramic films

Also Published As

Publication number Publication date
CA1086682A (en) 1980-09-30
FR2352078A1 (fr) 1977-12-16
DE2722045A1 (de) 1977-12-08
IT1143661B (it) 1986-10-22
ES458847A1 (es) 1978-08-16
NL7705384A (nl) 1977-11-21
ES469346A1 (es) 1979-01-16
AU2519777A (en) 1978-11-23
BE854762A (fr) 1977-11-17
JPS52155994A (en) 1977-12-24
US4225408A (en) 1980-09-30
FR2352078B1 (enExample) 1982-07-02
AU509321B2 (en) 1980-05-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee