GB1572914A - Process and apparatus for producing multi-doped preformed monocrystals - Google Patents
Process and apparatus for producing multi-doped preformed monocrystals Download PDFInfo
- Publication number
- GB1572914A GB1572914A GB424277A GB424277A GB1572914A GB 1572914 A GB1572914 A GB 1572914A GB 424277 A GB424277 A GB 424277A GB 424277 A GB424277 A GB 424277A GB 1572914 A GB1572914 A GB 1572914A
- Authority
- GB
- United Kingdom
- Prior art keywords
- monocrystal
- crucible
- raw material
- doped
- nucleus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7701014A FR2377224A2 (fr) | 1977-01-14 | 1977-01-14 | Procede et dispositif de fabrication de monocristaux preformes a dopage multiple |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1572914A true GB1572914A (en) | 1980-08-06 |
Family
ID=9185495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB424277A Expired GB1572914A (en) | 1977-01-14 | 1977-02-02 | Process and apparatus for producing multi-doped preformed monocrystals |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS6018636B2 (it) |
CH (1) | CH619007A5 (it) |
DE (1) | DE2704043C2 (it) |
FR (1) | FR2377224A2 (it) |
GB (1) | GB1572914A (it) |
IT (1) | IT1116306B (it) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3137741A1 (de) * | 1980-09-24 | 1982-06-09 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zum herstellen von einkristallen |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59165470U (ja) * | 1984-02-29 | 1984-11-06 | ケイディディ株式会社 | 単結晶製造装置 |
EP0220174A4 (en) * | 1985-05-17 | 1989-06-26 | Schumacher Co J C | CONTINUOUSLY SUCTIONED SINGLE CRYSTAL BLOCKS. |
DE19936651A1 (de) * | 1999-08-04 | 2001-02-15 | Forsch Mineralische Und Metall | Verfahren und Herstellung eines segmentierten Kristalls |
-
1977
- 1977-01-14 FR FR7701014A patent/FR2377224A2/fr active Granted
- 1977-02-01 DE DE19772704043 patent/DE2704043C2/de not_active Expired
- 1977-02-02 GB GB424277A patent/GB1572914A/en not_active Expired
- 1977-02-02 CH CH127777A patent/CH619007A5/fr not_active IP Right Cessation
- 1977-02-07 JP JP1170877A patent/JPS6018636B2/ja not_active Expired
- 1977-02-07 IT IT6727177A patent/IT1116306B/it active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3137741A1 (de) * | 1980-09-24 | 1982-06-09 | Naamloze Vennootschap Philips' Gloeilampenfabrieken, 5621 Eindhoven | Verfahren zum herstellen von einkristallen |
Also Published As
Publication number | Publication date |
---|---|
JPS6018636B2 (ja) | 1985-05-11 |
FR2377224A2 (fr) | 1978-08-11 |
DE2704043C2 (de) | 1983-09-01 |
IT1116306B (it) | 1986-02-10 |
JPS5389890A (en) | 1978-08-08 |
FR2377224B2 (it) | 1981-06-12 |
CH619007A5 (en) | 1980-08-29 |
DE2704043A1 (de) | 1978-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2893847A (en) | Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies | |
LaBelle Jr et al. | Growth of controlled profile crystals from the melt: Part I-Sapphire filaments | |
Stockbarger | The production of large single crystals of lithium fluoride | |
US4203951A (en) | Apparatus for growing single crystals from melt with additional feeding of comminuted charge | |
US3012865A (en) | Silicon purification process | |
US4565600A (en) | Processes for the continuous preparation of single crystals | |
US4303465A (en) | Method of growing monocrystals of corundum from a melt | |
JPS6256395A (ja) | 珪素棒を製造する方法および装置 | |
GB1572914A (en) | Process and apparatus for producing multi-doped preformed monocrystals | |
GB2084483A (en) | Method of manufacturing single crystals | |
JPS647040B2 (it) | ||
EP0400266B1 (en) | Apparatus for manufacturing single silicon crystal | |
US2985519A (en) | Production of silicon | |
US3272591A (en) | Production of single crystals from incongruently melting material | |
US3899304A (en) | Process of growing crystals | |
US3801309A (en) | Production of eutectic bodies by unidirectional solidification | |
US4186046A (en) | Growing doped single crystal ceramic materials | |
US3261722A (en) | Process for preparing semiconductor ingots within a depression | |
US2990261A (en) | Processing of boron compact | |
GB1572915A (en) | Crystallisation device | |
JP2636929B2 (ja) | ゲルマニウム酸ビスマス単結晶の製造方法 | |
US3960511A (en) | Zone melting process | |
US4603034A (en) | Crystal growing system | |
US3917462A (en) | Method of producing sodium beta-alumina single crystals | |
US4045278A (en) | Method and apparatus for floating melt zone of semiconductor crystal rods |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee | ||
PCPE | Delete 'patent ceased' from journal |
Free format text: NO.4907,PAGE 906 |
|
PCNP | Patent ceased through non-payment of renewal fee |