GB1552545A - Double split-electrode for charge transfer device - Google Patents

Double split-electrode for charge transfer device

Info

Publication number
GB1552545A
GB1552545A GB47087/77A GB4708777A GB1552545A GB 1552545 A GB1552545 A GB 1552545A GB 47087/77 A GB47087/77 A GB 47087/77A GB 4708777 A GB4708777 A GB 4708777A GB 1552545 A GB1552545 A GB 1552545A
Authority
GB
United Kingdom
Prior art keywords
electrode
transfer device
charge transfer
double split
split
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB47087/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of GB1552545A publication Critical patent/GB1552545A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • H01L29/76891Four-Phase CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00Transversal filters
    • H03H15/02Transversal filters using analogue shift registers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30Time-delay networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)
GB47087/77A 1976-12-17 1977-11-11 Double split-electrode for charge transfer device Expired GB1552545A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA268,093A CA1080355A (en) 1976-12-17 1976-12-17 Double split-electrode for charge transfer device

Publications (1)

Publication Number Publication Date
GB1552545A true GB1552545A (en) 1979-09-12

Family

ID=4107524

Family Applications (1)

Application Number Title Priority Date Filing Date
GB47087/77A Expired GB1552545A (en) 1976-12-17 1977-11-11 Double split-electrode for charge transfer device

Country Status (7)

Country Link
JP (1) JPS5375878A (ja)
CA (1) CA1080355A (ja)
DE (1) DE2755493A1 (ja)
FR (1) FR2374741A1 (ja)
GB (1) GB1552545A (ja)
NL (1) NL7712907A (ja)
SE (1) SE415615B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2453470A1 (fr) * 1979-04-06 1980-10-31 Thomson Csf Dispositif de lecture et d'injection de charges electriques et application d'un tel dispositif

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819958A (en) * 1972-11-03 1974-06-25 Texas Instruments Inc Charge transfer device analog matched filter
FR2302636A1 (fr) * 1975-02-28 1976-09-24 Thomson Csf Procede de filtrage de signaux analogiqu

Also Published As

Publication number Publication date
SE7714368L (sv) 1978-06-18
JPS6135722B2 (ja) 1986-08-14
CA1080355A (en) 1980-06-24
FR2374741B1 (ja) 1983-01-28
NL7712907A (nl) 1978-06-20
FR2374741A1 (fr) 1978-07-13
SE415615B (sv) 1980-10-13
JPS5375878A (en) 1978-07-05
DE2755493A1 (de) 1978-06-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee