JPS5375878A - Double strip electrode for charge transfer device - Google Patents

Double strip electrode for charge transfer device

Info

Publication number
JPS5375878A
JPS5375878A JP14999577A JP14999577A JPS5375878A JP S5375878 A JPS5375878 A JP S5375878A JP 14999577 A JP14999577 A JP 14999577A JP 14999577 A JP14999577 A JP 14999577A JP S5375878 A JPS5375878 A JP S5375878A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
strip electrode
double strip
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14999577A
Other languages
English (en)
Other versions
JPS6135722B2 (ja
Inventor
Jiyooji Fuokusaru Tomasu
Ari Iburahimu Abudooeruufuata
Pootaa Seraazu Resutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of JPS5375878A publication Critical patent/JPS5375878A/ja
Publication of JPS6135722B2 publication Critical patent/JPS6135722B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76891—Four-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30—Time-delay networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Filters That Use Time-Delay Elements (AREA)
JP14999577A 1976-12-17 1977-12-15 Double strip electrode for charge transfer device Granted JPS5375878A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA268,093A CA1080355A (en) 1976-12-17 1976-12-17 Double split-electrode for charge transfer device

Publications (2)

Publication Number Publication Date
JPS5375878A true JPS5375878A (en) 1978-07-05
JPS6135722B2 JPS6135722B2 (ja) 1986-08-14

Family

ID=4107524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14999577A Granted JPS5375878A (en) 1976-12-17 1977-12-15 Double strip electrode for charge transfer device

Country Status (7)

Country Link
JP (1) JPS5375878A (ja)
CA (1) CA1080355A (ja)
DE (1) DE2755493A1 (ja)
FR (1) FR2374741A1 (ja)
GB (1) GB1552545A (ja)
NL (1) NL7712907A (ja)
SE (1) SE415615B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140318A (en) * 1979-04-06 1980-11-01 Thomson Csf Charge reader and injector for reading charge in charge transfer element

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819958A (en) * 1972-11-03 1974-06-25 Texas Instruments Inc Charge transfer device analog matched filter
FR2302636A1 (fr) * 1975-02-28 1976-09-24 Thomson Csf Procede de filtrage de signaux analogiqu

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140318A (en) * 1979-04-06 1980-11-01 Thomson Csf Charge reader and injector for reading charge in charge transfer element

Also Published As

Publication number Publication date
SE7714368L (sv) 1978-06-18
JPS6135722B2 (ja) 1986-08-14
GB1552545A (en) 1979-09-12
CA1080355A (en) 1980-06-24
FR2374741B1 (ja) 1983-01-28
NL7712907A (nl) 1978-06-20
FR2374741A1 (fr) 1978-07-13
SE415615B (sv) 1980-10-13
DE2755493A1 (de) 1978-06-22

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