FR2374741B1 - - Google Patents

Info

Publication number
FR2374741B1
FR2374741B1 FR7737543A FR7737543A FR2374741B1 FR 2374741 B1 FR2374741 B1 FR 2374741B1 FR 7737543 A FR7737543 A FR 7737543A FR 7737543 A FR7737543 A FR 7737543A FR 2374741 B1 FR2374741 B1 FR 2374741B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7737543A
Other languages
French (fr)
Other versions
FR2374741A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of FR2374741A1 publication Critical patent/FR2374741A1/fr
Application granted granted Critical
Publication of FR2374741B1 publication Critical patent/FR2374741B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76891—Four-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/30—Time-delay networks
FR7737543A 1976-12-17 1977-12-13 Electrode a double fente pour dispositif a transfert de charges Granted FR2374741A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA268,093A CA1080355A (en) 1976-12-17 1976-12-17 Double split-electrode for charge transfer device

Publications (2)

Publication Number Publication Date
FR2374741A1 FR2374741A1 (fr) 1978-07-13
FR2374741B1 true FR2374741B1 (ja) 1983-01-28

Family

ID=4107524

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7737543A Granted FR2374741A1 (fr) 1976-12-17 1977-12-13 Electrode a double fente pour dispositif a transfert de charges

Country Status (7)

Country Link
JP (1) JPS5375878A (ja)
CA (1) CA1080355A (ja)
DE (1) DE2755493A1 (ja)
FR (1) FR2374741A1 (ja)
GB (1) GB1552545A (ja)
NL (1) NL7712907A (ja)
SE (1) SE415615B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2453470A1 (fr) * 1979-04-06 1980-10-31 Thomson Csf Dispositif de lecture et d'injection de charges electriques et application d'un tel dispositif

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819958A (en) * 1972-11-03 1974-06-25 Texas Instruments Inc Charge transfer device analog matched filter
FR2302636A1 (fr) * 1975-02-28 1976-09-24 Thomson Csf Procede de filtrage de signaux analogiqu

Also Published As

Publication number Publication date
CA1080355A (en) 1980-06-24
DE2755493A1 (de) 1978-06-22
JPS5375878A (en) 1978-07-05
SE415615B (sv) 1980-10-13
JPS6135722B2 (ja) 1986-08-14
NL7712907A (nl) 1978-06-20
SE7714368L (sv) 1978-06-18
FR2374741A1 (fr) 1978-07-13
GB1552545A (en) 1979-09-12

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Legal Events

Date Code Title Description
ST Notification of lapse