GB1551290A - Ething of a layer supported on a substrate - Google Patents

Ething of a layer supported on a substrate

Info

Publication number
GB1551290A
GB1551290A GB44340/76A GB4434076A GB1551290A GB 1551290 A GB1551290 A GB 1551290A GB 44340/76 A GB44340/76 A GB 44340/76A GB 4434076 A GB4434076 A GB 4434076A GB 1551290 A GB1551290 A GB 1551290A
Authority
GB
United Kingdom
Prior art keywords
ething
substrate
layer supported
supported
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44340/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19772723933 priority Critical patent/DE2723933A1/de
Publication of GB1551290A publication Critical patent/GB1551290A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P70/273—
    • H10P50/268—
    • H10P50/283—
    • H10P50/667—
    • H10W20/082—
GB44340/76A 1975-12-04 1976-11-24 Ething of a layer supported on a substrate Expired GB1551290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19772723933 DE2723933A1 (de) 1975-12-04 1977-05-26 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752554638 DE2554638A1 (de) 1975-12-04 1975-12-04 Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante

Publications (1)

Publication Number Publication Date
GB1551290A true GB1551290A (en) 1979-08-30

Family

ID=5963486

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44340/76A Expired GB1551290A (en) 1975-12-04 1976-11-24 Ething of a layer supported on a substrate

Country Status (7)

Country Link
JP (1) JPS5269576A (enExample)
BE (1) BE849065A (enExample)
DE (1) DE2554638A1 (enExample)
FR (1) FR2334199A1 (enExample)
GB (1) GB1551290A (enExample)
IT (1) IT1065165B (enExample)
NL (1) NL7613275A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999083A (en) * 1988-10-02 1991-03-12 Canon Kabushiki Kaisha Method of etching crystalline material with etchant injection inlet
WO2001015221A1 (en) * 1999-08-26 2001-03-01 Infineon Technologies North America Corp. Selective oxide etch for forming a protection layer with different oxide thicknesses
US6207517B1 (en) * 1998-08-18 2001-03-27 Siemens Aktiengesellschaft Method of fabricating a semiconductor insulation layer and a semiconductor component containing the semiconductor insulation layer
EP1691419A3 (en) * 2005-02-10 2007-10-24 NEC Electronics Corporation Field-effect transistor and method of manufacturing a field-effect transistor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD136670A1 (de) * 1976-02-04 1979-07-18 Rudolf Sacher Verfahren und vorrichtung zur herstellung von halbleiterstrukturen
DE2754549A1 (de) * 1977-12-07 1979-06-13 Siemens Ag Optoelektronischer sensor nach dem prinzip der ladungsinjektion
DE2837485A1 (de) * 1978-08-28 1980-04-17 Siemens Ag Verfahren zur herstellung einer ladungsgekoppelten anordnung fuer sensoren und speicher
JPS55157234A (en) * 1979-05-25 1980-12-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS60128622A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd エツチング法
GB2165692B (en) * 1984-08-25 1989-05-04 Ricoh Kk Manufacture of interconnection patterns
DE4140330C1 (enExample) * 1991-12-06 1993-03-18 Texas Instruments Deutschland Gmbh, 8050 Freising, De
JP2011243657A (ja) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd 半導体装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999083A (en) * 1988-10-02 1991-03-12 Canon Kabushiki Kaisha Method of etching crystalline material with etchant injection inlet
US6207517B1 (en) * 1998-08-18 2001-03-27 Siemens Aktiengesellschaft Method of fabricating a semiconductor insulation layer and a semiconductor component containing the semiconductor insulation layer
US6365525B2 (en) 1998-08-18 2002-04-02 Siemens Aktiengesellschaft Method of fabricating a semiconductor insulation layer
WO2001015221A1 (en) * 1999-08-26 2001-03-01 Infineon Technologies North America Corp. Selective oxide etch for forming a protection layer with different oxide thicknesses
EP1691419A3 (en) * 2005-02-10 2007-10-24 NEC Electronics Corporation Field-effect transistor and method of manufacturing a field-effect transistor

Also Published As

Publication number Publication date
FR2334199B1 (enExample) 1979-04-06
IT1065165B (it) 1985-02-25
BE849065A (fr) 1977-04-01
DE2554638A1 (de) 1977-06-16
NL7613275A (nl) 1977-06-07
FR2334199A1 (fr) 1977-07-01
JPS5269576A (en) 1977-06-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee