GB1530608A - Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section - Google Patents

Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section

Info

Publication number
GB1530608A
GB1530608A GB51773/75A GB5177375A GB1530608A GB 1530608 A GB1530608 A GB 1530608A GB 51773/75 A GB51773/75 A GB 51773/75A GB 5177375 A GB5177375 A GB 5177375A GB 1530608 A GB1530608 A GB 1530608A
Authority
GB
United Kingdom
Prior art keywords
melt
alumina
longitudinal axis
plane
seed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB51773/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Publication of GB1530608A publication Critical patent/GB1530608A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB51773/75A 1974-12-20 1975-12-18 Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section Expired GB1530608A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53509374A 1974-12-20 1974-12-20

Publications (1)

Publication Number Publication Date
GB1530608A true GB1530608A (en) 1978-11-01

Family

ID=24132809

Family Applications (1)

Application Number Title Priority Date Filing Date
GB51773/75A Expired GB1530608A (en) 1974-12-20 1975-12-18 Method for producing r-plane single crystal alpha alumina in massive form having substantially circular cross-section

Country Status (4)

Country Link
JP (1) JPS5612280B2 (https=)
DE (1) DE2555610C3 (https=)
FR (1) FR2294747A1 (https=)
GB (1) GB1530608A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004083407A (ja) * 2002-08-24 2004-03-18 Carl Zeiss Stiftung コランダム単結晶を成長させる方法および装置
JP5888198B2 (ja) * 2012-09-26 2016-03-16 住友金属鉱山株式会社 サファイア単結晶の製造装置
EP4174221A1 (fr) * 2021-11-02 2023-05-03 Comadur S.A. Procédé de fabrication d'un germe de saphir monocristallin ainsi que d'un monocristal de saphir à orientation cristallographique préférentielle et composants d habillage et fonctionnels pour l horlogerie et la bijouterie

Also Published As

Publication number Publication date
FR2294747A1 (fr) 1976-07-16
DE2555610C3 (de) 1979-11-22
FR2294747B1 (https=) 1982-03-19
JPS5612280B2 (https=) 1981-03-19
DE2555610A1 (de) 1976-07-01
JPS5187197A (https=) 1976-07-30
DE2555610B2 (de) 1979-04-05

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19951217