GB1205544A - Method and apparatus for growing crystalline materials - Google Patents

Method and apparatus for growing crystalline materials

Info

Publication number
GB1205544A
GB1205544A GB0438/69A GB143869A GB1205544A GB 1205544 A GB1205544 A GB 1205544A GB 0438/69 A GB0438/69 A GB 0438/69A GB 143869 A GB143869 A GB 143869A GB 1205544 A GB1205544 A GB 1205544A
Authority
GB
United Kingdom
Prior art keywords
crucible
forming member
capillary
seed
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB0438/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tyco International Ltd
Original Assignee
Tyco Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tyco Laboratories Inc filed Critical Tyco Laboratories Inc
Publication of GB1205544A publication Critical patent/GB1205544A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34Edge-defined film-fed crystal-growth using dies or slits
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C49/00Alloys containing metallic or non-metallic fibres or filaments
    • C22C49/02Alloys containing metallic or non-metallic fibres or filaments characterised by the matrix material
    • C22C49/04Light metals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,205,544. Crystal-pulling. TYCO LABORATORIES Inc. 9 Jan., 1969 [24 Jan., 1968], No. 1438/69. Heading BIS. A crystalline rod is pulled, using a seed, from ,a liquid in the form of a film on-the upper surface of a forming member having sharp boundary edge or edges which define the cross-section of the rod, the forming member having at least one passage for feeding liquid from a heated crucible to the upper surface by pressure or capillary action. A capillary passage may be a tube or slot (which may extend right across the upper surface). The forming member may be supported at the base of the crucible or may be suspended from a crucible cover. The seed may be smaller or larger than the capillary. The rod 'may be of alumina, barium titanate, yttrium aluminium garnet, lithium niobate, or sodium chloride. Growth of a-alumina may be along the c-axis (0001). A narrow filament having a diameter of 0.005-0.10 inch may be produced. In Fig. 2, a forming member 56 is situated in a crucible 46 having a cover 52, the member having a base 60 and an upper surface 64 which is of circular cross-section and extends through the cover and is connected via an axial capillary bore 62 and radial openings 63 to the liquid within the crucible. In Fig. 3, a seed 72 is pulled upwards from a film 70 on the surface 64. The base of the forming member may alternatively have a depending skirt (Fig. 5). The upper surface may alternatively be triangular (Fig. 5A), rectangular (Fig. 6 and 7), or annular (Fig. 8 and 8A). The crucible is contained in a suitable induction heating furnace (Fig. 1).
GB0438/69A 1968-01-24 1969-01-09 Method and apparatus for growing crystalline materials Expired GB1205544A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US70012668A 1968-01-24 1968-01-24

Publications (1)

Publication Number Publication Date
GB1205544A true GB1205544A (en) 1970-09-16

Family

ID=24812298

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0438/69A Expired GB1205544A (en) 1968-01-24 1969-01-09 Method and apparatus for growing crystalline materials

Country Status (4)

Country Link
US (1) US3591348A (en)
JP (1) JPS4827593B1 (en)
CH (1) CH531365A (en)
GB (1) GB1205544A (en)

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2138359B2 (en) * 1971-07-31 1973-05-17 Preussag Ag, 3000 Hannover DEVICE FOR PULLING A ROD
BE791024A (en) * 1971-11-08 1973-05-07 Tyco Laboratories Inc PROCESS FOR DEVELOPING CRYSTALS FROM A BATH OF A MATERIAL
US3853489A (en) * 1971-11-08 1974-12-10 Tyco Laboratories Inc A non-wetting aid for growing crystalline bodies
US3801309A (en) * 1971-11-08 1974-04-02 Tyco Laboratories Inc Production of eutectic bodies by unidirectional solidification
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US3961905A (en) * 1974-02-25 1976-06-08 Corning Glass Works Crucible and heater assembly for crystal growth from a melt
JPS5928942B2 (en) * 1974-04-10 1984-07-17 株式会社日立製作所 Container made of thermally anisotropic material
JPS535994B2 (en) * 1974-09-26 1978-03-03
US3976508A (en) * 1974-11-01 1976-08-24 Mobil Tyco Solar Energy Corporation Tubular solar cell devices
US3953174A (en) * 1975-03-17 1976-04-27 Tyco Laboratories, Inc. Apparatus for growing crystalline bodies from the melt
US4000030A (en) * 1975-06-09 1976-12-28 International Business Machines Corporation Method for drawing a monocrystal from a melt formed about a wettable projection
JPS5254411A (en) * 1975-10-30 1977-05-02 Victor Co Of Japan Ltd Static capacitance type pick-up stylus and production of same
US4095329A (en) * 1975-12-05 1978-06-20 Mobil Tyco Soalar Energy Corporation Manufacture of semiconductor ribbon and solar cells
US4036666A (en) * 1975-12-05 1977-07-19 Mobil Tyco Solar Energy Corporation Manufacture of semiconductor ribbon
US4116641A (en) * 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4158038A (en) * 1977-01-24 1979-06-12 Mobil Tyco Solar Energy Corporation Method and apparatus for reducing residual stresses in crystals
US4239734A (en) * 1978-07-13 1980-12-16 International Business Machines Corporation Method and apparatus for forming silicon crystalline bodies
US4269652A (en) * 1978-11-06 1981-05-26 Allied Chemical Corporation Method for growing crystalline materials
US4267010A (en) * 1980-06-16 1981-05-12 Mobil Tyco Solar Energy Corporation Guidance mechanism
US4440728A (en) * 1981-08-03 1984-04-03 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
US4544528A (en) * 1981-08-03 1985-10-01 Mobil Solar Energy Corporation Apparatus for growing tubular crystalline bodies
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4647437A (en) * 1983-05-19 1987-03-03 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
US4661324A (en) * 1985-02-15 1987-04-28 Mobil Solar Energy Corporation Apparatus for replenishing a melt
US4721688A (en) * 1986-09-18 1988-01-26 Mobil Solar Energy Corporation Method of growing crystals
DE3890206T1 (en) * 1987-03-27 1989-04-13 Mobil Solar Energy Corp CRYSTAL DRAWING APPARATUS
EP0309540B1 (en) * 1987-03-27 1993-10-06 Mobil Solar Energy Corporation An apparatus and process for edge-defined, film-fed crystal growth
US4932865A (en) * 1988-07-18 1990-06-12 Union Carbide Chemicals And Plastics Company Inc. Crystalline orthodontic bracket
US4968380A (en) * 1989-05-24 1990-11-06 Mobil Solar Energy Corporation System for continuously replenishing melt
US5114528A (en) * 1990-08-07 1992-05-19 Wisconsin Alumni Research Foundation Edge-defined contact heater apparatus and method for floating zone crystal growth
US5427051A (en) * 1993-05-21 1995-06-27 General Electric Company Solid state formation of sapphire using a localized energy source
US5549746A (en) * 1993-09-24 1996-08-27 General Electric Company Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal
US5437736A (en) * 1994-02-15 1995-08-01 Cole; Eric D. Semiconductor fiber solar cells and modules
JPH1025576A (en) * 1996-04-05 1998-01-27 Dowa Mining Co Ltd Sublimation method of raw material compound in cvd film formation method
US5754391A (en) * 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
US6008449A (en) * 1997-08-19 1999-12-28 Cole; Eric D. Reflective concentrating solar cell assembly
US6139811A (en) * 1999-03-25 2000-10-31 Ase Americas, Inc. EFG crystal growth apparatus
JP4059639B2 (en) * 2001-03-14 2008-03-12 株式会社荏原製作所 Crystal pulling device
DE60228314D1 (en) * 2001-12-04 2008-09-25 Landauer Inc ALUMINUM OXIDE MATERIAL FOR OPTICAL DATA STORAGE
US7072275B2 (en) * 2001-12-04 2006-07-04 Landauer, Incorporated Optical single-bit recording and fluorescent readout utilizing aluminum oxide single crystals
JP2005289776A (en) * 2004-04-05 2005-10-20 Canon Inc Method for manufacturing crystal and crystal manufacturing apparatus
US7348076B2 (en) * 2004-04-08 2008-03-25 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
EP2275772A1 (en) * 2005-06-10 2011-01-19 Saint-Gobain Ceramics and Plastics, Inc. Transparent ceramic composite
US20070227579A1 (en) * 2006-03-30 2007-10-04 Benyamin Buller Assemblies of cylindrical solar units with internal spacing
CN100398703C (en) * 2006-05-22 2008-07-02 天津市硅酸盐研究所 Method for growing high-performance tube type sapphire
CN100419133C (en) * 2006-05-22 2008-09-17 天津市硅酸盐研究所 Method for growing high-performance tube type sapphire back cover
MX2009003120A (en) * 2006-09-22 2009-04-06 Saint Gobain Ceramics C-plane sapphire method and apparatus.
WO2009055405A1 (en) * 2007-10-23 2009-04-30 Saint-Gobain Ceramics & Plastics, Inc. Scintillator crystals and methods of forming
US20090130415A1 (en) * 2007-11-21 2009-05-21 Saint-Gobain Ceramics & Plastics, Inc. R-Plane Sapphire Method and Apparatus
CN100575566C (en) * 2007-12-28 2009-12-30 中国科学院上海光学精密机械研究所 Method for growing carbon-doped sapphire crystal by using guided mode method
WO2009110436A1 (en) * 2008-03-03 2009-09-11 三菱化学株式会社 Nitride semiconductor crystal and manufacturing method thereof
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Also Published As

Publication number Publication date
CH531365A (en) 1972-12-15
JPS4827593B1 (en) 1973-08-23
US3591348A (en) 1971-07-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years