GB1528027A - Method of manufacturing integrated injection logic semiconductor devices - Google Patents
Method of manufacturing integrated injection logic semiconductor devicesInfo
- Publication number
- GB1528027A GB1528027A GB53012/75A GB5301275A GB1528027A GB 1528027 A GB1528027 A GB 1528027A GB 53012/75 A GB53012/75 A GB 53012/75A GB 5301275 A GB5301275 A GB 5301275A GB 1528027 A GB1528027 A GB 1528027A
- Authority
- GB
- United Kingdom
- Prior art keywords
- aperture
- apertures
- nitride
- layer
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002347 injection Methods 0.000 title abstract 2
- 239000007924 injection Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000014759 maintenance of location Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14879674A JPS5426471B2 (US06534493-20030318-C00288.png) | 1974-12-27 | 1974-12-27 | |
JP14879574A JPS5513584B2 (US06534493-20030318-C00288.png) | 1974-12-27 | 1974-12-27 | |
JP50001913A JPS5182583A (en) | 1974-12-27 | 1974-12-27 | Handotaisochino seizohoho |
JP14879774A JPS5415396B2 (US06534493-20030318-C00288.png) | 1974-12-27 | 1974-12-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1528027A true GB1528027A (en) | 1978-10-11 |
Family
ID=27453504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB53012/75A Expired GB1528027A (en) | 1974-12-27 | 1975-12-29 | Method of manufacturing integrated injection logic semiconductor devices |
Country Status (4)
Country | Link |
---|---|
US (1) | US4058419A (US06534493-20030318-C00288.png) |
DE (2) | DE2560576C2 (US06534493-20030318-C00288.png) |
FR (1) | FR2334204A1 (US06534493-20030318-C00288.png) |
GB (1) | GB1528027A (US06534493-20030318-C00288.png) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5317081A (en) * | 1976-07-30 | 1978-02-16 | Sharp Corp | Production of i2l device |
DE2652103C2 (de) * | 1976-11-16 | 1982-10-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Integrierte Halbleiteranordnung für ein logisches Schaltungskonzept und Verfahren zu ihrer Herstellung |
US4180827A (en) * | 1977-08-31 | 1979-12-25 | International Business Machines Corporation | NPN/PNP Fabrication process with improved alignment |
CA1116309A (en) * | 1977-11-30 | 1982-01-12 | David L. Bergeron | Structure and process for optimizing the characteristics of i.sup.2l devices |
US4168999A (en) * | 1978-12-26 | 1979-09-25 | Fairchild Camera And Instrument Corporation | Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques |
US4317690A (en) * | 1980-06-18 | 1982-03-02 | Signetics Corporation | Self-aligned double polysilicon MOS fabrication |
US4446611A (en) * | 1980-06-26 | 1984-05-08 | International Business Machines Corporation | Method of making a saturation-limited bipolar transistor device |
DE3136731A1 (de) * | 1981-09-16 | 1983-03-31 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum herstellen einer halbleiteranordnung |
US5759902A (en) * | 1986-09-26 | 1998-06-02 | Analog Devices, Incorporated | Method of making an integrated circuit with complementary junction-isolated bipolar transistors |
CN102299070A (zh) * | 2010-06-22 | 2011-12-28 | 无锡华润上华半导体有限公司 | 横向pnp晶体管的制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
US3472710A (en) * | 1967-04-20 | 1969-10-14 | Teledyne Inc | Method of forming a field effect transistor |
US3489622A (en) * | 1967-05-18 | 1970-01-13 | Ibm | Method of making high frequency transistors |
US3560278A (en) * | 1968-11-29 | 1971-02-02 | Motorola Inc | Alignment process for fabricating semiconductor devices |
FR2051714A1 (en) * | 1969-07-12 | 1971-04-09 | Tokyo Shibaura Electric Co | High frequency transistors |
DE2262297C2 (de) * | 1972-12-20 | 1985-11-28 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierbare, logisch verknüpfbare Halbleiterschaltungsanordnung mit I↑2↑L-Aufbau |
US3919005A (en) * | 1973-05-07 | 1975-11-11 | Fairchild Camera Instr Co | Method for fabricating double-diffused, lateral transistor |
US3873989A (en) * | 1973-05-07 | 1975-03-25 | Fairchild Camera Instr Co | Double-diffused, lateral transistor structure |
GB1507299A (en) * | 1974-03-26 | 1978-04-12 | Signetics Corp | Integrated semiconductor devices |
US3982266A (en) * | 1974-12-09 | 1976-09-21 | Texas Instruments Incorporated | Integrated injection logic having high inverse current gain |
-
1975
- 1975-12-24 US US05/644,294 patent/US4058419A/en not_active Expired - Lifetime
- 1975-12-29 DE DE2560576A patent/DE2560576C2/de not_active Expired
- 1975-12-29 FR FR7539998A patent/FR2334204A1/fr active Granted
- 1975-12-29 DE DE2558925A patent/DE2558925C2/de not_active Expired
- 1975-12-29 GB GB53012/75A patent/GB1528027A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2558925A1 (de) | 1976-07-08 |
DE2558925C2 (de) | 1985-10-31 |
FR2334204B1 (US06534493-20030318-C00288.png) | 1978-05-26 |
FR2334204A1 (fr) | 1977-07-01 |
DE2560576C2 (de) | 1985-10-31 |
US4058419A (en) | 1977-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19951228 |