GB1510944A - Method for fabricating semiconductor device and etchant for polymer resin - Google Patents

Method for fabricating semiconductor device and etchant for polymer resin

Info

Publication number
GB1510944A
GB1510944A GB17720/76A GB1772076A GB1510944A GB 1510944 A GB1510944 A GB 1510944A GB 17720/76 A GB17720/76 A GB 17720/76A GB 1772076 A GB1772076 A GB 1772076A GB 1510944 A GB1510944 A GB 1510944A
Authority
GB
United Kingdom
Prior art keywords
etchant
semiconductor device
polymer resin
fabricating semiconductor
hitachi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17720/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1510944A publication Critical patent/GB1510944A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means

Landscapes

  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
GB17720/76A 1975-08-13 1976-04-30 Method for fabricating semiconductor device and etchant for polymer resin Expired GB1510944A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50098179A JPS5222071A (en) 1975-08-13 1975-08-13 Method of selective etching of film of polyamide resin

Publications (1)

Publication Number Publication Date
GB1510944A true GB1510944A (en) 1978-05-17

Family

ID=14212791

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17720/76A Expired GB1510944A (en) 1975-08-13 1976-04-30 Method for fabricating semiconductor device and etchant for polymer resin

Country Status (5)

Country Link
JP (1) JPS5222071A (cg-RX-API-DMAC7.html)
DE (1) DE2618937C3 (cg-RX-API-DMAC7.html)
FR (1) FR2321190A1 (cg-RX-API-DMAC7.html)
GB (1) GB1510944A (cg-RX-API-DMAC7.html)
NL (1) NL7604652A (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106599A (en) * 1978-02-09 1979-08-21 Hitachi Chem Co Ltd Preparation of polyamide intermediate for semiconductor processing
JPS54179102U (cg-RX-API-DMAC7.html) * 1978-06-07 1979-12-18
JPS5515502A (en) * 1978-07-18 1980-02-02 Hitachi Ltd Running control system for manless wagon
JPS557880A (en) * 1979-04-27 1980-01-21 Hitachi Ltd Etching solution for organic resin
JPS58108229A (ja) * 1981-12-21 1983-06-28 Hitachi Ltd ポリイミド系樹脂膜の選択エツチング方法
FR2550660B2 (fr) * 1982-04-14 1987-11-06 Commissariat Energie Atomique Perfectionnement au procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
FR2525389A1 (fr) * 1982-04-14 1983-10-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
FR2537779B1 (fr) * 1982-12-10 1986-03-14 Commissariat Energie Atomique Procede de positionnement d'un trou de contact electrique entre deux lignes d'interconnexion d'un circuit integre
DE3475856D1 (en) * 1983-08-12 1989-02-02 Commissariat Energie Atomique Method for aligning a connecting line above an electrical contact hole of an integrated circuit
EP0511691A3 (en) * 1988-07-13 1993-03-03 International Business Machines Corporation Wet etching of cured polyimide
JP3586468B2 (ja) 1995-01-17 2004-11-10 新日鐵化学株式会社 積層体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49120504A (cg-RX-API-DMAC7.html) * 1973-03-16 1974-11-18

Also Published As

Publication number Publication date
DE2618937A1 (de) 1977-02-17
FR2321190A1 (fr) 1977-03-11
FR2321190B1 (cg-RX-API-DMAC7.html) 1979-08-17
DE2618937B2 (de) 1978-06-29
NL7604652A (nl) 1977-02-15
JPS5222071A (en) 1977-02-19
JPS5328342B2 (cg-RX-API-DMAC7.html) 1978-08-14
DE2618937C3 (de) 1979-02-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940430