GB1509949A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1509949A GB1509949A GB44375/75A GB4437575A GB1509949A GB 1509949 A GB1509949 A GB 1509949A GB 44375/75 A GB44375/75 A GB 44375/75A GB 4437575 A GB4437575 A GB 4437575A GB 1509949 A GB1509949 A GB 1509949A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- etching
- polysilicon
- doped polysilicon
- fets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 7
- 229920005591 polysilicon Polymers 0.000 abstract 7
- 238000005530 etching Methods 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 239000011521 glass Substances 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 235000011118 potassium hydroxide Nutrition 0.000 abstract 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54044375A | 1975-01-13 | 1975-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1509949A true GB1509949A (en) | 1978-05-10 |
Family
ID=24155496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB44375/75A Expired GB1509949A (en) | 1975-01-13 | 1975-10-28 | Semiconductor device |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5346701B2 (fr) |
| BE (1) | BE837382A (fr) |
| CA (1) | CA1040320A (fr) |
| CH (1) | CH598695A5 (fr) |
| DE (1) | DE2600221B2 (fr) |
| FR (1) | FR2297496A1 (fr) |
| GB (1) | GB1509949A (fr) |
| IN (1) | IN144889B (fr) |
| IT (1) | IT1049016B (fr) |
| NL (1) | NL7600259A (fr) |
| SE (1) | SE408508B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011068065A1 (fr) * | 2009-12-02 | 2011-06-09 | Canon Kabushiki Kaisha | Dispositif à semi-conducteur et son procédé de fabrication |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448632A (en) * | 1981-05-25 | 1984-05-15 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor devices |
| US7282409B2 (en) * | 2004-06-23 | 2007-10-16 | Micron Technology, Inc. | Isolation structure for a memory cell using Al2O3 dielectric |
-
1975
- 1975-10-10 IN IN1961/CAL/1975A patent/IN144889B/en unknown
- 1975-10-28 GB GB44375/75A patent/GB1509949A/en not_active Expired
- 1975-10-31 IT IT28892/75A patent/IT1049016B/it active
-
1976
- 1976-01-05 DE DE2600221A patent/DE2600221B2/de not_active Withdrawn
- 1976-01-07 CH CH12676A patent/CH598695A5/xx not_active IP Right Cessation
- 1976-01-07 BE BE7000759A patent/BE837382A/xx unknown
- 1976-01-08 SE SE7600122A patent/SE408508B/xx unknown
- 1976-01-12 NL NL7600259A patent/NL7600259A/xx not_active Application Discontinuation
- 1976-01-12 JP JP311276A patent/JPS5346701B2/ja not_active Expired
- 1976-01-12 CA CA243,354A patent/CA1040320A/fr not_active Expired
- 1976-01-12 FR FR7600618A patent/FR2297496A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011068065A1 (fr) * | 2009-12-02 | 2011-06-09 | Canon Kabushiki Kaisha | Dispositif à semi-conducteur et son procédé de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| SE7600122L (sv) | 1976-07-14 |
| BE837382A (nl) | 1976-05-03 |
| CA1040320A (fr) | 1978-10-10 |
| SE408508B (sv) | 1979-06-11 |
| JPS5195785A (fr) | 1976-08-21 |
| DE2600221A1 (de) | 1976-07-15 |
| DE2600221B2 (de) | 1978-09-07 |
| CH598695A5 (fr) | 1978-05-12 |
| FR2297496A1 (fr) | 1976-08-06 |
| IT1049016B (it) | 1981-01-20 |
| IN144889B (fr) | 1978-07-22 |
| JPS5346701B2 (fr) | 1978-12-15 |
| NL7600259A (nl) | 1976-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |