GB1509949A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1509949A
GB1509949A GB44375/75A GB4437575A GB1509949A GB 1509949 A GB1509949 A GB 1509949A GB 44375/75 A GB44375/75 A GB 44375/75A GB 4437575 A GB4437575 A GB 4437575A GB 1509949 A GB1509949 A GB 1509949A
Authority
GB
United Kingdom
Prior art keywords
layer
etching
polysilicon
doped polysilicon
fets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44375/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1509949A publication Critical patent/GB1509949A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
GB44375/75A 1975-01-13 1975-10-28 Semiconductor device Expired GB1509949A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54044375A 1975-01-13 1975-01-13

Publications (1)

Publication Number Publication Date
GB1509949A true GB1509949A (en) 1978-05-10

Family

ID=24155496

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44375/75A Expired GB1509949A (en) 1975-01-13 1975-10-28 Semiconductor device

Country Status (11)

Country Link
JP (1) JPS5346701B2 (enrdf_load_stackoverflow)
BE (1) BE837382A (enrdf_load_stackoverflow)
CA (1) CA1040320A (enrdf_load_stackoverflow)
CH (1) CH598695A5 (enrdf_load_stackoverflow)
DE (1) DE2600221B2 (enrdf_load_stackoverflow)
FR (1) FR2297496A1 (enrdf_load_stackoverflow)
GB (1) GB1509949A (enrdf_load_stackoverflow)
IN (1) IN144889B (enrdf_load_stackoverflow)
IT (1) IT1049016B (enrdf_load_stackoverflow)
NL (1) NL7600259A (enrdf_load_stackoverflow)
SE (1) SE408508B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011068065A1 (en) * 2009-12-02 2011-06-09 Canon Kabushiki Kaisha Semiconductor device and production method thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US7282409B2 (en) * 2004-06-23 2007-10-16 Micron Technology, Inc. Isolation structure for a memory cell using Al2O3 dielectric

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011068065A1 (en) * 2009-12-02 2011-06-09 Canon Kabushiki Kaisha Semiconductor device and production method thereof

Also Published As

Publication number Publication date
JPS5346701B2 (enrdf_load_stackoverflow) 1978-12-15
BE837382A (nl) 1976-05-03
IN144889B (enrdf_load_stackoverflow) 1978-07-22
SE408508B (sv) 1979-06-11
FR2297496A1 (fr) 1976-08-06
SE7600122L (sv) 1976-07-14
JPS5195785A (enrdf_load_stackoverflow) 1976-08-21
NL7600259A (nl) 1976-07-15
CH598695A5 (enrdf_load_stackoverflow) 1978-05-12
DE2600221A1 (de) 1976-07-15
DE2600221B2 (de) 1978-09-07
CA1040320A (en) 1978-10-10
IT1049016B (it) 1981-01-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee