JPS5346701B2 - - Google Patents

Info

Publication number
JPS5346701B2
JPS5346701B2 JP311276A JP311276A JPS5346701B2 JP S5346701 B2 JPS5346701 B2 JP S5346701B2 JP 311276 A JP311276 A JP 311276A JP 311276 A JP311276 A JP 311276A JP S5346701 B2 JPS5346701 B2 JP S5346701B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP311276A
Other languages
Japanese (ja)
Other versions
JPS5195785A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5195785A publication Critical patent/JPS5195785A/ja
Publication of JPS5346701B2 publication Critical patent/JPS5346701B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/03Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
JP311276A 1975-01-13 1976-01-12 Expired JPS5346701B2 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54044375A 1975-01-13 1975-01-13

Publications (2)

Publication Number Publication Date
JPS5195785A JPS5195785A (enrdf_load_stackoverflow) 1976-08-21
JPS5346701B2 true JPS5346701B2 (enrdf_load_stackoverflow) 1978-12-15

Family

ID=24155496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP311276A Expired JPS5346701B2 (enrdf_load_stackoverflow) 1975-01-13 1976-01-12

Country Status (11)

Country Link
JP (1) JPS5346701B2 (enrdf_load_stackoverflow)
BE (1) BE837382A (enrdf_load_stackoverflow)
CA (1) CA1040320A (enrdf_load_stackoverflow)
CH (1) CH598695A5 (enrdf_load_stackoverflow)
DE (1) DE2600221B2 (enrdf_load_stackoverflow)
FR (1) FR2297496A1 (enrdf_load_stackoverflow)
GB (1) GB1509949A (enrdf_load_stackoverflow)
IN (1) IN144889B (enrdf_load_stackoverflow)
IT (1) IT1049016B (enrdf_load_stackoverflow)
NL (1) NL7600259A (enrdf_load_stackoverflow)
SE (1) SE408508B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US7282409B2 (en) * 2004-06-23 2007-10-16 Micron Technology, Inc. Isolation structure for a memory cell using Al2O3 dielectric
JP2011119397A (ja) * 2009-12-02 2011-06-16 Canon Inc 半導体装置及びその製造方法

Also Published As

Publication number Publication date
BE837382A (nl) 1976-05-03
IN144889B (enrdf_load_stackoverflow) 1978-07-22
SE408508B (sv) 1979-06-11
FR2297496A1 (fr) 1976-08-06
SE7600122L (sv) 1976-07-14
JPS5195785A (enrdf_load_stackoverflow) 1976-08-21
NL7600259A (nl) 1976-07-15
CH598695A5 (enrdf_load_stackoverflow) 1978-05-12
DE2600221A1 (de) 1976-07-15
DE2600221B2 (de) 1978-09-07
CA1040320A (en) 1978-10-10
GB1509949A (en) 1978-05-10
IT1049016B (it) 1981-01-20

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