GB1492830A - Production of doped zones of one conductivity type in semiconductor bodies - Google Patents

Production of doped zones of one conductivity type in semiconductor bodies

Info

Publication number
GB1492830A
GB1492830A GB17502/75A GB1750275A GB1492830A GB 1492830 A GB1492830 A GB 1492830A GB 17502/75 A GB17502/75 A GB 17502/75A GB 1750275 A GB1750275 A GB 1750275A GB 1492830 A GB1492830 A GB 1492830A
Authority
GB
United Kingdom
Prior art keywords
region
production
conductivity type
semiconductor bodies
polycrystalline layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17502/75A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1492830A publication Critical patent/GB1492830A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Bipolar Transistors (AREA)
GB17502/75A 1974-06-21 1975-04-28 Production of doped zones of one conductivity type in semiconductor bodies Expired GB1492830A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2429957A DE2429957B2 (de) 1974-06-21 1974-06-21 Verfahren zur Herstellung einer dotierten Zone eines bestimmten Leitungstyps in einem Halbleiterkörper

Publications (1)

Publication Number Publication Date
GB1492830A true GB1492830A (en) 1977-11-23

Family

ID=5918663

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17502/75A Expired GB1492830A (en) 1974-06-21 1975-04-28 Production of doped zones of one conductivity type in semiconductor bodies

Country Status (7)

Country Link
US (1) US4029527A (enExample)
JP (1) JPS5118474A (enExample)
CA (1) CA1032660A (enExample)
DE (1) DE2429957B2 (enExample)
FR (1) FR2275881A1 (enExample)
GB (1) GB1492830A (enExample)
IT (1) IT1038812B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268376A (en) * 1975-12-05 1977-06-07 Nec Corp Semiconductor device
NL7604445A (nl) * 1976-04-27 1977-10-31 Philips Nv Werkwijze ter vervaardiging van een halfgelei- derinrichting, en inrichting vervaardigd door toepassing van de werkwijze.
JPS5317081A (en) * 1976-07-30 1978-02-16 Sharp Corp Production of i2l device
NL7709363A (nl) * 1977-08-25 1979-02-27 Philips Nv Werkwijze ter vervaardiging van een halfgeleider- inrichting en halfgeleiderinrichting vervaardigd onder toepassing van een dergelijke werkwijze.
US4118250A (en) * 1977-12-30 1978-10-03 International Business Machines Corporation Process for producing integrated circuit devices by ion implantation
US4199386A (en) * 1978-11-28 1980-04-22 Rca Corporation Method of diffusing aluminum into monocrystalline silicon
JPS6028135B2 (ja) * 1979-05-18 1985-07-03 富士通株式会社 半導体装置の製造方法
US4534806A (en) * 1979-12-03 1985-08-13 International Business Machines Corporation Method for manufacturing vertical PNP transistor with shallow emitter
JPS56115525A (en) * 1980-02-18 1981-09-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US5830939A (en) * 1996-04-25 1998-11-03 Xerox Corporation Viscosity reduction method
US7579394B2 (en) * 2007-01-16 2009-08-25 Xerox Corporation Adhesion promoter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052379A (enExample) * 1963-03-28 1900-01-01
DE1913681A1 (de) * 1969-03-18 1970-10-01 Siemens Ag Silicium-Hochfrequenz-Planartransistor
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources
US3621346A (en) * 1970-01-28 1971-11-16 Ibm Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby
US3703420A (en) * 1970-03-03 1972-11-21 Ibm Lateral transistor structure and process for forming the same
US3719535A (en) * 1970-12-21 1973-03-06 Motorola Inc Hyperfine geometry devices and method for their fabrication
NL161920C (nl) * 1971-03-12 1980-03-17 Hitachi Ltd Werkwijze voor het vervaardigen van een half- geleiderinrichting, waarbij de roostervervorming t.g.v. doteerstoffen wordt gecompenseerd.
JPS499186A (enExample) * 1972-05-11 1974-01-26
US3897282A (en) * 1972-10-17 1975-07-29 Northern Electric Co Method of forming silicon gate device structures with two or more gate levels

Also Published As

Publication number Publication date
FR2275881A1 (fr) 1976-01-16
DE2429957C3 (enExample) 1987-04-16
DE2429957A1 (de) 1976-01-08
US4029527A (en) 1977-06-14
DE2429957B2 (de) 1980-08-28
IT1038812B (it) 1979-11-30
JPS5118474A (enExample) 1976-02-14
FR2275881B1 (enExample) 1980-01-04
CA1032660A (en) 1978-06-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee