GB1485499A - Memory circuit - Google Patents
Memory circuitInfo
- Publication number
- GB1485499A GB1485499A GB52615/74A GB5261574A GB1485499A GB 1485499 A GB1485499 A GB 1485499A GB 52615/74 A GB52615/74 A GB 52615/74A GB 5261574 A GB5261574 A GB 5261574A GB 1485499 A GB1485499 A GB 1485499A
- Authority
- GB
- United Kingdom
- Prior art keywords
- branch
- current
- volts
- pair
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
- H03K17/24—Storing the actual state when the supply voltage fails
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
- H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US423422A US3870901A (en) | 1973-12-10 | 1973-12-10 | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
US426889A US3882467A (en) | 1973-12-10 | 1973-12-20 | Complementary field effect transistor memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1485499A true GB1485499A (en) | 1977-09-14 |
Family
ID=27025991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB52615/74A Expired GB1485499A (en) | 1973-12-10 | 1974-12-05 | Memory circuit |
Country Status (5)
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE28905E (en) * | 1967-10-19 | 1976-07-13 | Bell Telephone Laboratories, Incorporated | Field effect transistor memory cell |
JPS5430617B2 (US06633600-20031014-M00021.png) * | 1974-09-04 | 1979-10-02 | ||
GB1502270A (en) * | 1974-10-30 | 1978-03-01 | Hitachi Ltd | Word line driver circuit in memory circuit |
US3980935A (en) * | 1974-12-16 | 1976-09-14 | Worst Bernard I | Volatile memory support system |
JPS5199418A (en) * | 1975-02-27 | 1976-09-02 | Laurel Bank Machine Co | Teidenjino ic memoriihojikairo |
US3970950A (en) * | 1975-03-21 | 1976-07-20 | International Business Machines Corporation | High common mode rejection differential amplifier utilizing enhancement depletion field effect transistors |
US4004170A (en) * | 1975-04-29 | 1977-01-18 | International Business Machines Corporation | MOSFET latching driver |
DE2519323C3 (de) * | 1975-04-30 | 1979-07-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Statisches Drei-Transistoren-Speicherelement |
US4005395A (en) * | 1975-05-08 | 1977-01-25 | Sperry Rand Corporation | Compatible standby power driver for a dynamic semiconductor |
US4030084A (en) * | 1975-11-28 | 1977-06-14 | Honeywell Information Systems, Inc. | Substrate bias voltage generated from refresh oscillator |
US4175290A (en) * | 1977-07-28 | 1979-11-20 | Hughes Aircraft Company | Integrated semiconductor memory array having improved logic latch circuitry |
US4258430A (en) * | 1978-02-08 | 1981-03-24 | Tyburski Robert M | Information collection and storage system with removable memory |
US4189785A (en) * | 1978-04-26 | 1980-02-19 | National Semiconductor Corporation | Complementary MOS memory array including complementary MOS memory cells therefor |
US4463270A (en) * | 1980-07-24 | 1984-07-31 | Fairchild Camera & Instrument Corp. | MOS Comparator circuit |
US4532607A (en) * | 1981-07-22 | 1985-07-30 | Tokyo Shibaura Denki Kabushiki Kaisha | Programmable circuit including a latch to store a fuse's state |
US4447746A (en) * | 1981-12-31 | 1984-05-08 | International Business Machines Corporation | Digital photodetectors |
JPS6037531U (ja) * | 1983-08-24 | 1985-03-15 | 昭和電工建材株式会社 | 外壁の水侵入防止構造 |
JPS60136084A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
JPH0795395B2 (ja) * | 1984-02-13 | 1995-10-11 | 株式会社日立製作所 | 半導体集積回路 |
JP2937546B2 (ja) * | 1991-05-30 | 1999-08-23 | シャープ株式会社 | 外部電源端子を備える小型電子機器のメモリ保護装置 |
US5559455A (en) * | 1994-12-23 | 1996-09-24 | Lucent Technologies Inc. | Sense amplifier with overvoltage protection |
US5805496A (en) * | 1996-12-27 | 1998-09-08 | International Business Machines Corporation | Four device SRAM cell with single bitline |
KR100599130B1 (ko) * | 1998-03-18 | 2006-07-12 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 메모리 셀을 갖는 반도체 장치 |
US6484265B2 (en) * | 1998-12-30 | 2002-11-19 | Intel Corporation | Software control of transistor body bias in controlling chip parameters |
CN105874598B (zh) * | 2013-11-15 | 2019-06-18 | 德克萨斯仪器股份有限公司 | 用于控制耗尽型晶体管的方法和电路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1113111A (en) * | 1964-05-29 | 1968-05-08 | Nat Res Dev | Digital storage devices |
US3518635A (en) * | 1967-08-22 | 1970-06-30 | Bunker Ramo | Digital memory apparatus |
US3533087A (en) * | 1967-09-15 | 1970-10-06 | Rca Corp | Memory employing transistor storage cells |
US3502909A (en) * | 1968-12-10 | 1970-03-24 | Shell Oil Co | Pulsed substrate transistor inverter |
US3621302A (en) * | 1969-01-15 | 1971-11-16 | Ibm | Monolithic-integrated semiconductor array having reduced power consumption |
GB1296067A (US06633600-20031014-M00021.png) * | 1969-03-21 | 1972-11-15 | ||
US3579204A (en) * | 1969-03-24 | 1971-05-18 | Sperry Rand Corp | Variable conduction threshold transistor memory circuit insensitive to threshold deviations |
JPS5211199B1 (US06633600-20031014-M00021.png) * | 1970-05-27 | 1977-03-29 | ||
US3702990A (en) * | 1971-02-02 | 1972-11-14 | Rca Corp | Variable threshold memory system using minimum amplitude signals |
-
1973
- 1973-12-10 US US423422A patent/US3870901A/en not_active Expired - Lifetime
- 1973-12-20 US US426889A patent/US3882467A/en not_active Expired - Lifetime
-
1974
- 1974-10-22 FR FR7441885*A patent/FR2255678B1/fr not_active Expired
- 1974-11-12 JP JP12964874A patent/JPS5717318B2/ja not_active Expired
- 1974-12-05 GB GB52615/74A patent/GB1485499A/en not_active Expired
- 1974-12-12 DE DE2458848A patent/DE2458848C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5093747A (US06633600-20031014-M00021.png) | 1975-07-26 |
US3882467A (en) | 1975-05-06 |
DE2458848C2 (de) | 1982-03-11 |
FR2255678B1 (US06633600-20031014-M00021.png) | 1976-12-31 |
DE2458848A1 (de) | 1975-06-26 |
FR2255678A1 (US06633600-20031014-M00021.png) | 1975-07-18 |
JPS5717318B2 (US06633600-20031014-M00021.png) | 1982-04-09 |
US3870901A (en) | 1975-03-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |