GB1470441A - Arrangements including a charge coupled device - Google Patents
Arrangements including a charge coupled deviceInfo
- Publication number
- GB1470441A GB1470441A GB1197374A GB1197374A GB1470441A GB 1470441 A GB1470441 A GB 1470441A GB 1197374 A GB1197374 A GB 1197374A GB 1197374 A GB1197374 A GB 1197374A GB 1470441 A GB1470441 A GB 1470441A
- Authority
- GB
- United Kingdom
- Prior art keywords
- charge
- background
- input
- carriers
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000969 carrier Substances 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Abstract
1470441 Charge coupled devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 18 March 1974 [3 Dec 1973] 11973/74 Addition to 1470191 Heading H1K In operating a CCD as described in Specification 1470191 in which a layer of one conductivity type through which majority charge carrier packets are transferred is isolated from the surroundings in operation, has a doping and thickness such that it can be depleted throughout its thickness by an electric field without breakdown occurring, and comprises one or more surface adjacent regions beneath the transfer electrode system of higher doping than the rest of the layer, charge transfer efficiency is improved by adding a constant background quantity of majority carriers to each charge packet representing information to be transferred before the charge packets are transferred to the readout location. The background charge may constitute 10-50% of the maximum charge capable of being held at each storage site. Particularly when the device is used as an image sensor the background carriers may be provided by uniformly illuminating by an auxiliary radiation source prior to, during and/ of after the light integrating period. Pressure or heat may alternatively be used to generate the signal and/or background carriers. In all cases the background carriers may be introduced (as in Fig. 3) via a heavily doped input diffusion 102 within the N+ region of the layer 2 in which charge transfer occurs by impressing oppositely phased clock voltages on adjacent pairs of electrodes, the electrodes in each pair being relatively biased as shown to provide the asymmetrical potential wells needed to ensure unidirectional charge transfer. In operation the entire layer is initially depleted by suitably biasing the P type substrate 20. A shown the adjustable voltage source 111 supplies background charge, on which input signal source 110 superimposes charge representing information and this is gated to the first transfer electrode 4 by signals applied to gating electrode by a separate pulse source 115 or by clock line 24. In alternative forms in which a constant or pulsating voltage is applied to electrode 101, the input and background voltage signals are applied to the input gate 112, to the second of two serially arranged input gates to the first of which clock voltage is supplied, or to first and second gates respectively. All the embodiments of the aforementioned UK application may be modified for operation in the manner described above.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7316495A NL7316495A (en) | 1973-12-03 | 1973-12-03 | SEMI-GUIDE DEVICE. |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1470441A true GB1470441A (en) | 1977-04-14 |
Family
ID=19820120
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1197374A Expired GB1470441A (en) | 1973-12-03 | 1974-03-18 | Arrangements including a charge coupled device |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5242673B2 (en) |
CA (1) | CA1015451A (en) |
CH (1) | CH571755A5 (en) |
DE (1) | DE2414753C2 (en) |
ES (1) | ES424446A1 (en) |
FR (1) | FR2253276B1 (en) |
GB (1) | GB1470441A (en) |
IT (1) | IT1010702B (en) |
NL (1) | NL7316495A (en) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660697A (en) * | 1970-02-16 | 1972-05-02 | Bell Telephone Labor Inc | Monolithic semiconductor apparatus adapted for sequential charge transfer |
NL176406C (en) * | 1971-10-27 | 1985-04-01 | Philips Nv | Load-coupled semiconductor device having a semiconductor body comprising a semiconductor adjoining semiconductor layer and means for inputting information in the form of packages in the medium. |
-
1973
- 1973-12-03 NL NL7316495A patent/NL7316495A/en not_active Application Discontinuation
-
1974
- 1974-03-18 IT IT1263974A patent/IT1010702B/en active
- 1974-03-18 GB GB1197374A patent/GB1470441A/en not_active Expired
- 1974-03-19 FR FR7409175A patent/FR2253276B1/fr not_active Expired
- 1974-03-20 ES ES424446A patent/ES424446A1/en not_active Expired
- 1974-03-20 CA CA195,567A patent/CA1015451A/en not_active Expired
- 1974-03-25 JP JP49033393A patent/JPS5242673B2/ja not_active Expired
- 1974-03-25 CH CH411274A patent/CH571755A5/xx not_active IP Right Cessation
- 1974-03-27 DE DE19742414753 patent/DE2414753C2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5242673B2 (en) | 1977-10-26 |
NL7316495A (en) | 1975-06-05 |
CH571755A5 (en) | 1976-01-15 |
DE2414753A1 (en) | 1975-06-05 |
IT1010702B (en) | 1977-01-20 |
FR2253276A1 (en) | 1975-06-27 |
CA1015451A (en) | 1977-08-09 |
DE2414753C2 (en) | 1982-04-15 |
FR2253276B1 (en) | 1979-08-17 |
ES424446A1 (en) | 1976-06-01 |
AU6688374A (en) | 1975-09-25 |
JPS5087286A (en) | 1975-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed |