GB1470441A - Arrangements including a charge coupled device - Google Patents

Arrangements including a charge coupled device

Info

Publication number
GB1470441A
GB1470441A GB1197374A GB1197374A GB1470441A GB 1470441 A GB1470441 A GB 1470441A GB 1197374 A GB1197374 A GB 1197374A GB 1197374 A GB1197374 A GB 1197374A GB 1470441 A GB1470441 A GB 1470441A
Authority
GB
United Kingdom
Prior art keywords
charge
background
input
carriers
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1197374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1470441A publication Critical patent/GB1470441A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808Input structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices

Abstract

1470441 Charge coupled devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 18 March 1974 [3 Dec 1973] 11973/74 Addition to 1470191 Heading H1K In operating a CCD as described in Specification 1470191 in which a layer of one conductivity type through which majority charge carrier packets are transferred is isolated from the surroundings in operation, has a doping and thickness such that it can be depleted throughout its thickness by an electric field without breakdown occurring, and comprises one or more surface adjacent regions beneath the transfer electrode system of higher doping than the rest of the layer, charge transfer efficiency is improved by adding a constant background quantity of majority carriers to each charge packet representing information to be transferred before the charge packets are transferred to the readout location. The background charge may constitute 10-50% of the maximum charge capable of being held at each storage site. Particularly when the device is used as an image sensor the background carriers may be provided by uniformly illuminating by an auxiliary radiation source prior to, during and/ of after the light integrating period. Pressure or heat may alternatively be used to generate the signal and/or background carriers. In all cases the background carriers may be introduced (as in Fig. 3) via a heavily doped input diffusion 102 within the N+ region of the layer 2 in which charge transfer occurs by impressing oppositely phased clock voltages on adjacent pairs of electrodes, the electrodes in each pair being relatively biased as shown to provide the asymmetrical potential wells needed to ensure unidirectional charge transfer. In operation the entire layer is initially depleted by suitably biasing the P type substrate 20. A shown the adjustable voltage source 111 supplies background charge, on which input signal source 110 superimposes charge representing information and this is gated to the first transfer electrode 4 by signals applied to gating electrode by a separate pulse source 115 or by clock line 24. In alternative forms in which a constant or pulsating voltage is applied to electrode 101, the input and background voltage signals are applied to the input gate 112, to the second of two serially arranged input gates to the first of which clock voltage is supplied, or to first and second gates respectively. All the embodiments of the aforementioned UK application may be modified for operation in the manner described above.
GB1197374A 1973-12-03 1974-03-18 Arrangements including a charge coupled device Expired GB1470441A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7316495A NL7316495A (en) 1973-12-03 1973-12-03 SEMI-GUIDE DEVICE.

Publications (1)

Publication Number Publication Date
GB1470441A true GB1470441A (en) 1977-04-14

Family

ID=19820120

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1197374A Expired GB1470441A (en) 1973-12-03 1974-03-18 Arrangements including a charge coupled device

Country Status (9)

Country Link
JP (1) JPS5242673B2 (en)
CA (1) CA1015451A (en)
CH (1) CH571755A5 (en)
DE (1) DE2414753C2 (en)
ES (1) ES424446A1 (en)
FR (1) FR2253276B1 (en)
GB (1) GB1470441A (en)
IT (1) IT1010702B (en)
NL (1) NL7316495A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
NL176406C (en) * 1971-10-27 1985-04-01 Philips Nv Load-coupled semiconductor device having a semiconductor body comprising a semiconductor adjoining semiconductor layer and means for inputting information in the form of packages in the medium.

Also Published As

Publication number Publication date
JPS5242673B2 (en) 1977-10-26
NL7316495A (en) 1975-06-05
CH571755A5 (en) 1976-01-15
DE2414753A1 (en) 1975-06-05
IT1010702B (en) 1977-01-20
FR2253276A1 (en) 1975-06-27
CA1015451A (en) 1977-08-09
DE2414753C2 (en) 1982-04-15
FR2253276B1 (en) 1979-08-17
ES424446A1 (en) 1976-06-01
AU6688374A (en) 1975-09-25
JPS5087286A (en) 1975-07-14

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Legal Events

Date Code Title Description
PS Patent sealed