Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/762—Charge transfer devices
  • H01L29/765—Charge-coupled devices
  • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
  • H01L29/76808—Input structures
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
  • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
  • H01L29/1025—Channel region of field-effect devices
  • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Applications Claiming Priority (1)

Publications (2)

Family

ID=19820120

Family Applications (1)

Country Status (9)

Family Cites Families (2)

• 1973
  • 1973-12-03 NL NL7316495A patent/NL7316495A/en not_active Application Discontinuation
• 1974
  • 1974-03-18 IT IT1263974A patent/IT1010702B/en active
  • 1974-03-18 GB GB1197374A patent/GB1470441A/en not_active Expired
  • 1974-03-19 FR FR7409175A patent/FR2253276B1/fr not_active Expired
  • 1974-03-20 ES ES424446A patent/ES424446A1/en not_active Expired
  • 1974-03-20 CA CA195,567A patent/CA1015451A/en not_active Expired
  • 1974-03-25 JP JP49033393A patent/JPS5242673B2/ja not_active Expired
  • 1974-03-25 CH CH411274A patent/CH571755A5/xx not_active IP Right Cessation
  • 1974-03-27 DE DE19742414753 patent/DE2414753C2/en not_active Expired

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