GB1461199A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
GB1461199A
GB1461199A GB1172274A GB1172274A GB1461199A GB 1461199 A GB1461199 A GB 1461199A GB 1172274 A GB1172274 A GB 1172274A GB 1172274 A GB1172274 A GB 1172274A GB 1461199 A GB1461199 A GB 1461199A
Authority
GB
United Kingdom
Prior art keywords
layer
layers
active layer
carrier concentration
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1172274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3236373A external-priority patent/JPS49122290A/ja
Priority claimed from JP3236273A external-priority patent/JPS49122289A/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1461199A publication Critical patent/GB1461199A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

1461199 Semi-conductor lasers MATSUSHITA ELECTRONICS CORP 15 March 1974 [20 March 1973 (2)] 11722/74 Headings H1C and H1K [Also in Division C4] In a double heterostructure semi-conductor laser the carrier concentration in its active layer 13, with reference to the thickness of this layer, has a maximum at the centre of the layer and parts of the active layer away from the centre have progressively lower carrier concentrations. The carrier concentration change may be of a step-wise character, Fig. 5 (not shown) or may be continuous, Fig. 7c (not shown). In the embodiment of Fig. 3, which is made by the epitaxial growth of layers 12, 13, 14 and 15 on a substrate 11, the active layer 13 is grown as a series of seven layers. In layers two to four, the concentration of Zn dopant in each layer is greater than in the previous layer, to reach a maximum dopant concentration in layer four. From layers four to seven this effect is reversed, to give a symmetrical step-like distribution of carrier concentration. In the embodiment of Fig. 6 the active layer 113 initially comprises three layers 41-43, 42 being Zn-doped GaAs while 41 and 43 are non-doped GaAs. After production by epitaxial growth of the entire element 111-115, it is heat-treated, causing the Zn dopant of layer 42 to diffuse outwards and produce a symmetrical bell-shaped distribution of carrier concentration (Fig. 7c).
GB1172274A 1973-03-20 1974-03-15 Semiconductor laser Expired GB1461199A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3236373A JPS49122290A (en) 1973-03-20 1973-03-20
JP3236273A JPS49122289A (en) 1973-03-20 1973-03-20

Publications (1)

Publication Number Publication Date
GB1461199A true GB1461199A (en) 1977-01-13

Family

ID=26370916

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1172274A Expired GB1461199A (en) 1973-03-20 1974-03-15 Semiconductor laser

Country Status (3)

Country Link
CA (1) CA1009738A (en)
FR (1) FR2222773B1 (en)
GB (1) GB1461199A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1162673A2 (en) * 2000-06-08 2001-12-12 Eastman Kodak Company Method of making an emissive layer for an organic light-emitting device
CN100448044C (en) * 2007-02-15 2008-12-31 华南师范大学 Semiconductor heterozygote and its lighting transistor
CN114374146A (en) * 2020-10-15 2022-04-19 山东华光光电子股份有限公司 GaAs-based 915nm/976nm high-power dual-wavelength laser epitaxial wafer and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1162673A2 (en) * 2000-06-08 2001-12-12 Eastman Kodak Company Method of making an emissive layer for an organic light-emitting device
EP1162673A3 (en) * 2000-06-08 2004-02-04 Eastman Kodak Company Method of making an emissive layer for an organic light-emitting device
CN100448044C (en) * 2007-02-15 2008-12-31 华南师范大学 Semiconductor heterozygote and its lighting transistor
CN114374146A (en) * 2020-10-15 2022-04-19 山东华光光电子股份有限公司 GaAs-based 915nm/976nm high-power dual-wavelength laser epitaxial wafer and preparation method thereof

Also Published As

Publication number Publication date
DE2413493B2 (en) 1976-02-19
FR2222773B1 (en) 1979-03-23
FR2222773A1 (en) 1974-10-18
DE2413493A1 (en) 1974-10-03
CA1009738A (en) 1977-05-03

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19940314