GB1457318A - Protective coatings for field effect transistors - Google Patents
Protective coatings for field effect transistorsInfo
- Publication number
- GB1457318A GB1457318A GB1543374A GB1543374A GB1457318A GB 1457318 A GB1457318 A GB 1457318A GB 1543374 A GB1543374 A GB 1543374A GB 1543374 A GB1543374 A GB 1543374A GB 1457318 A GB1457318 A GB 1457318A
- Authority
- GB
- United Kingdom
- Prior art keywords
- mirror
- layers
- alternately
- field effect
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 239000011253 protective coating Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000005083 Zinc sulfide Substances 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 239000011575 calcium Substances 0.000 abstract 1
- 229910001610 cryolite Inorganic materials 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 abstract 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical class [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical class [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35704773A | 1973-05-03 | 1973-05-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1457318A true GB1457318A (en) | 1976-12-01 |
Family
ID=23404086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1543374A Expired GB1457318A (en) | 1973-05-03 | 1974-04-08 | Protective coatings for field effect transistors |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5247306B2 (enrdf_load_stackoverflow) |
CA (1) | CA1007383A (enrdf_load_stackoverflow) |
DE (1) | DE2420257A1 (enrdf_load_stackoverflow) |
FR (1) | FR2228298B1 (enrdf_load_stackoverflow) |
GB (1) | GB1457318A (enrdf_load_stackoverflow) |
IT (1) | IT1006472B (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1774592A1 (en) * | 2004-07-26 | 2007-04-18 | Koninklijke Philips Electronics N.V. | Chip with light protection layer |
DE102014100469A1 (de) * | 2013-11-29 | 2015-06-03 | Epcos Ag | Elektronisches Bauelement und Verwendung desselben |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54159307U (enrdf_load_stackoverflow) * | 1978-04-28 | 1979-11-07 | ||
JPH02249230A (ja) * | 1988-11-25 | 1990-10-05 | Fujitsu Ltd | 金属電極の形成方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1530274A (fr) * | 1966-07-08 | 1968-06-21 | Westinghouse Electric Corp | Cellule solaire semiconductrice |
-
1974
- 1974-03-19 FR FR7410667A patent/FR2228298B1/fr not_active Expired
- 1974-04-03 JP JP3706574A patent/JPS5247306B2/ja not_active Expired
- 1974-04-08 GB GB1543374A patent/GB1457318A/en not_active Expired
- 1974-04-08 CA CA197,094A patent/CA1007383A/en not_active Expired
- 1974-04-17 IT IT2150174A patent/IT1006472B/it active
- 1974-04-26 DE DE19742420257 patent/DE2420257A1/de not_active Ceased
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1774592A1 (en) * | 2004-07-26 | 2007-04-18 | Koninklijke Philips Electronics N.V. | Chip with light protection layer |
DE102014100469A1 (de) * | 2013-11-29 | 2015-06-03 | Epcos Ag | Elektronisches Bauelement und Verwendung desselben |
US10225965B2 (en) | 2013-11-29 | 2019-03-05 | Epcos Ag | Electronic component and use thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5011184A (enrdf_load_stackoverflow) | 1975-02-05 |
FR2228298B1 (enrdf_load_stackoverflow) | 1978-01-06 |
IT1006472B (it) | 1976-09-30 |
DE2420257A1 (de) | 1974-11-14 |
FR2228298A1 (enrdf_load_stackoverflow) | 1974-11-29 |
JPS5247306B2 (enrdf_load_stackoverflow) | 1977-12-01 |
CA1007383A (en) | 1977-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |