GB1448150A - Thyristors - Google Patents

Thyristors

Info

Publication number
GB1448150A
GB1448150A GB4417873A GB4417873A GB1448150A GB 1448150 A GB1448150 A GB 1448150A GB 4417873 A GB4417873 A GB 4417873A GB 4417873 A GB4417873 A GB 4417873A GB 1448150 A GB1448150 A GB 1448150A
Authority
GB
United Kingdom
Prior art keywords
path
electrode
regions
sept
projections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4417873A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722246979 external-priority patent/DE2246979C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1448150A publication Critical patent/GB1448150A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308Gate electrodes for thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
GB4417873A 1972-09-25 1973-09-20 Thyristors Expired GB1448150A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722246979 DE2246979C3 (de) 1972-09-25 Thyristor

Publications (1)

Publication Number Publication Date
GB1448150A true GB1448150A (en) 1976-09-02

Family

ID=5857313

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4417873A Expired GB1448150A (en) 1972-09-25 1973-09-20 Thyristors

Country Status (6)

Country Link
JP (1) JPS4971877A (xx)
FR (1) FR2200627B1 (xx)
GB (1) GB1448150A (xx)
IT (1) IT993265B (xx)
NL (1) NL7310720A (xx)
SE (1) SE389226B (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS584467B2 (ja) * 1975-05-23 1983-01-26 三菱電機株式会社 ハンドウタイソウチ
DE3917100A1 (de) * 1989-05-26 1990-11-29 Eupec Gmbh & Co Kg Thyristor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4118987Y1 (xx) * 1965-07-16 1966-09-05
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon

Also Published As

Publication number Publication date
DE2246979A1 (de) 1974-04-04
FR2200627A1 (xx) 1974-04-19
JPS4971877A (xx) 1974-07-11
DE2246979B2 (de) 1977-04-14
SE389226B (sv) 1976-10-25
NL7310720A (xx) 1974-03-27
FR2200627B1 (xx) 1978-08-04
IT993265B (it) 1975-09-30

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee