GB1445724A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1445724A
GB1445724A GB5162073A GB5162073A GB1445724A GB 1445724 A GB1445724 A GB 1445724A GB 5162073 A GB5162073 A GB 5162073A GB 5162073 A GB5162073 A GB 5162073A GB 1445724 A GB1445724 A GB 1445724A
Authority
GB
United Kingdom
Prior art keywords
region
type
resistivity
regions
surface regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5162073A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1445724A publication Critical patent/GB1445724A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Amplitude Modulation (AREA)
  • Attenuators (AREA)
  • Bipolar Transistors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
GB5162073A 1972-11-10 1973-11-07 Semiconductor device Expired GB1445724A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7215200A NL7215200A (enExample) 1972-11-10 1972-11-10

Publications (1)

Publication Number Publication Date
GB1445724A true GB1445724A (en) 1976-08-11

Family

ID=19817338

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5162073A Expired GB1445724A (en) 1972-11-10 1973-11-07 Semiconductor device

Country Status (15)

Country Link
US (1) US4143383A (enExample)
JP (1) JPS5227031B2 (enExample)
AT (1) ATA936373A (enExample)
BE (1) BE807079A (enExample)
BR (1) BR7308693D0 (enExample)
CA (1) CA1006274A (enExample)
CH (1) CH574165A5 (enExample)
DE (1) DE2353770C3 (enExample)
ES (1) ES420364A1 (enExample)
FR (1) FR2206589B1 (enExample)
GB (1) GB1445724A (enExample)
IN (1) IN140549B (enExample)
IT (1) IT996919B (enExample)
NL (1) NL7215200A (enExample)
SE (1) SE391997B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932640A (enExample) * 1972-07-20 1974-03-25
US4050055A (en) * 1976-07-26 1977-09-20 Krautkramer-Branson, Incorporated Attenuator circuit ultrasonic testing
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
US4275362A (en) * 1979-03-16 1981-06-23 Rca Corporation Gain controlled amplifier using a pin diode
US4500845A (en) * 1983-03-15 1985-02-19 Texas Instruments Incorporated Programmable attenuator
JPS60126643A (ja) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd 印刷媒体
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
EP0214414B1 (de) * 1985-08-31 1990-11-14 Licentia Patent-Verwaltungs-GmbH Verfahren zum Herstellen eines beidseitig kontaktierten Halbleiterkörpers
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
US6835967B2 (en) * 2003-03-25 2004-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor diodes with fin structure
EP1800344A2 (en) * 2004-10-05 2007-06-27 Koninklijke Philips Electronics N.V. Semiconductor device and use thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT270747B (de) * 1963-12-17 1969-05-12 Western Electric Co Verfahren zum Herstellen von mechanisch abgestützten, elektrisch leitenden Anschlüssen an Halbleiterscheiben
DE1514453A1 (de) * 1965-04-26 1969-08-14 Siemens Ag Verfahren zum Herstellen von Halbleiterschaltungen
FR1540051A (fr) * 1966-09-21 1968-09-20 Rca Corp Microcircuit et son procédé de fabrication
US3475700A (en) * 1966-12-30 1969-10-28 Texas Instruments Inc Monolithic microwave duplexer switch
US3518585A (en) * 1966-12-30 1970-06-30 Texas Instruments Inc Voltage controlled a.c. signal attenuator
US3549960A (en) * 1967-12-20 1970-12-22 Massachusetts Inst Technology Thermo-photovoltaic converter having back-surface junctions
DE1937755A1 (de) * 1968-07-26 1970-02-12 Signetics Corp Halbleiter-Baugruppe und -Vorrichtung mit ummanteltem Traegerleitungsaufbau und Verfahren zur Herstellung derselben
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
JPS4828958B1 (enExample) * 1969-07-22 1973-09-06
FR2071043A5 (enExample) * 1969-12-16 1971-09-17 Thomson Csf
US3714473A (en) * 1971-05-12 1973-01-30 Bell Telephone Labor Inc Planar semiconductor device utilizing confined charge carrier beams
DE2203247C3 (de) * 1972-01-24 1980-02-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb

Also Published As

Publication number Publication date
CA1006274A (en) 1977-03-01
IN140549B (enExample) 1976-11-27
DE2353770B2 (de) 1981-07-16
IT996919B (it) 1975-12-10
ATA936373A (de) 1979-06-15
DE2353770A1 (de) 1974-05-16
NL7215200A (enExample) 1974-05-14
DE2353770C3 (de) 1982-03-25
AU6232073A (en) 1975-05-15
BE807079A (nl) 1974-05-08
JPS50772A (enExample) 1975-01-07
JPS5227031B2 (enExample) 1977-07-18
BR7308693D0 (pt) 1974-08-22
ES420364A1 (es) 1976-04-16
FR2206589A1 (enExample) 1974-06-07
CH574165A5 (enExample) 1976-03-31
FR2206589B1 (enExample) 1978-02-24
US4143383A (en) 1979-03-06
SE391997B (sv) 1977-03-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee