GB1441851A - Method of depositing epitaxial layers on a substrate from the liquid phase - Google Patents

Method of depositing epitaxial layers on a substrate from the liquid phase

Info

Publication number
GB1441851A
GB1441851A GB2124474A GB2124474A GB1441851A GB 1441851 A GB1441851 A GB 1441851A GB 2124474 A GB2124474 A GB 2124474A GB 2124474 A GB2124474 A GB 2124474A GB 1441851 A GB1441851 A GB 1441851A
Authority
GB
United Kingdom
Prior art keywords
substrate
epitaxial layers
liquid phase
depositing epitaxial
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2124474A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1441851A publication Critical patent/GB1441851A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • H10P14/265—
    • H10P14/271—
    • H10P14/3402—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
GB2124474A 1973-08-31 1974-05-14 Method of depositing epitaxial layers on a substrate from the liquid phase Expired GB1441851A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00393627A US3825449A (en) 1973-08-31 1973-08-31 Method of depositing epitaxial layers on a substrate from the liquid phase

Publications (1)

Publication Number Publication Date
GB1441851A true GB1441851A (en) 1976-07-07

Family

ID=23555553

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2124474A Expired GB1441851A (en) 1973-08-31 1974-05-14 Method of depositing epitaxial layers on a substrate from the liquid phase

Country Status (6)

Country Link
US (1) US3825449A (cg-RX-API-DMAC10.html)
JP (1) JPS5337187B2 (cg-RX-API-DMAC10.html)
CA (1) CA1022439A (cg-RX-API-DMAC10.html)
DE (1) DE2425747C3 (cg-RX-API-DMAC10.html)
FR (1) FR2245404B1 (cg-RX-API-DMAC10.html)
GB (1) GB1441851A (cg-RX-API-DMAC10.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1365465A (en) * 1973-02-06 1974-09-04 Standard Telephones Cables Ltd Semiconductor device manufacture
DE2641347C2 (de) * 1976-09-14 1984-08-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von epitaxialen Schichten auf einkristallinen Substraten
JPS5492062U (cg-RX-API-DMAC10.html) * 1977-12-12 1979-06-29
JPS54159367U (cg-RX-API-DMAC10.html) * 1978-04-28 1979-11-07
DE2910723A1 (de) * 1979-03-19 1980-09-25 Siemens Ag Verfahren zum herstellen von epitaktischen halbleitermaterialschichten auf einkristallinen substraten nach der fluessigphasen-schiebe-epitaxie
JPS55147310U (cg-RX-API-DMAC10.html) * 1979-04-04 1980-10-23
JPS6132109U (ja) * 1984-07-31 1986-02-26 古河電気工業株式会社 磁性ベルトコンベアユニツト
US5326716A (en) * 1986-02-11 1994-07-05 Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy
US5185288A (en) * 1988-08-26 1993-02-09 Hewlett-Packard Company Epitaxial growth method
JP2693032B2 (ja) * 1990-10-16 1997-12-17 キヤノン株式会社 半導体層の形成方法及びこれを用いる太陽電池の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4094388A (en) * 1976-07-09 1978-06-13 Wagner Electric Corporation Automatic brake adjusting means

Also Published As

Publication number Publication date
DE2425747B2 (de) 1978-01-12
FR2245404A1 (cg-RX-API-DMAC10.html) 1975-04-25
JPS5051667A (cg-RX-API-DMAC10.html) 1975-05-08
DE2425747A1 (de) 1975-03-06
US3825449A (en) 1974-07-23
DE2425747C3 (de) 1978-09-14
CA1022439A (en) 1977-12-13
JPS5337187B2 (cg-RX-API-DMAC10.html) 1978-10-06
FR2245404B1 (cg-RX-API-DMAC10.html) 1980-04-11

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee