GB1434905A - Thyristors and the method of manufacture thereof - Google Patents
Thyristors and the method of manufacture thereofInfo
- Publication number
- GB1434905A GB1434905A GB3648572A GB3648572A GB1434905A GB 1434905 A GB1434905 A GB 1434905A GB 3648572 A GB3648572 A GB 3648572A GB 3648572 A GB3648572 A GB 3648572A GB 1434905 A GB1434905 A GB 1434905A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- emitter
- shorted
- point
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 101100234822 Caenorhabditis elegans ltd-1 gene Proteins 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000006735 deficit Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
Abstract
1434905 Thyristors AEI SEMICONDUCTORS Ltd 1 Aug 1973 [4 Aug 1972] 36485/72 Heading H1K The turn off time of a shorted-emitter thyristor is reduced by so designing it that no point in the emitter region is more than 300 Á from a point at which the region is shorted to the adjacent base region. The preferred emitter region configuration 5, shown in plan in Fig. 2, is annular with two concentric rings of twentyfour equally spaced circular apertures 12a, 12b through which the base region 2 extends to contact the annular emitter electrode which also extends on to region 2 at the outer periphery of the emitter region, the trigger electrode being disposed centrally within the emitter electrode. The diameters of the inner and outer peripheries of the emitter region and of the inner and outer rings, on which the apertures, which are of 250 Á diameter, are centred are 3000, 5500, 3550 and 4700 Á respectively, giving a maximum distance of 225 Á to a shorted point. In an alternative structure nickel or aluminium protrusions from the emitter electrode penetrate the emitter region to provide the shorts. Further improvement in turn off time without serious impairment of other device parameters is obtainable by moderate doping with gold.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3648572A GB1434905A (en) | 1972-08-04 | 1972-08-04 | Thyristors and the method of manufacture thereof |
DE19732339440 DE2339440B2 (en) | 1972-08-04 | 1973-08-03 | Thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB3648572A GB1434905A (en) | 1972-08-04 | 1972-08-04 | Thyristors and the method of manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1434905A true GB1434905A (en) | 1976-05-12 |
Family
ID=10388592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3648572A Expired GB1434905A (en) | 1972-08-04 | 1972-08-04 | Thyristors and the method of manufacture thereof |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE2339440B2 (en) |
GB (1) | GB1434905A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4150390A (en) * | 1976-10-08 | 1979-04-17 | Bbc Brown, Boveri & Company, Limited | Thyristor with gate and emitter shunts distributed over the cathode surface |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50123282A (en) * | 1974-03-15 | 1975-09-27 | ||
DE3017584C2 (en) * | 1980-05-08 | 1982-12-23 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Thyristor |
-
1972
- 1972-08-04 GB GB3648572A patent/GB1434905A/en not_active Expired
-
1973
- 1973-08-03 DE DE19732339440 patent/DE2339440B2/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4150390A (en) * | 1976-10-08 | 1979-04-17 | Bbc Brown, Boveri & Company, Limited | Thyristor with gate and emitter shunts distributed over the cathode surface |
Also Published As
Publication number | Publication date |
---|---|
DE2339440B2 (en) | 1975-06-12 |
DE2339440A1 (en) | 1974-02-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 19930731 |