GB1434905A - Thyristors and the method of manufacture thereof - Google Patents

Thyristors and the method of manufacture thereof

Info

Publication number
GB1434905A
GB1434905A GB3648572A GB3648572A GB1434905A GB 1434905 A GB1434905 A GB 1434905A GB 3648572 A GB3648572 A GB 3648572A GB 3648572 A GB3648572 A GB 3648572A GB 1434905 A GB1434905 A GB 1434905A
Authority
GB
United Kingdom
Prior art keywords
region
emitter
shorted
point
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3648572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AEI Semiconductors Ltd
Original Assignee
AEI Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEI Semiconductors Ltd filed Critical AEI Semiconductors Ltd
Priority to GB3648572A priority Critical patent/GB1434905A/en
Priority to DE19732339440 priority patent/DE2339440B2/en
Publication of GB1434905A publication Critical patent/GB1434905A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)

Abstract

1434905 Thyristors AEI SEMICONDUCTORS Ltd 1 Aug 1973 [4 Aug 1972] 36485/72 Heading H1K The turn off time of a shorted-emitter thyristor is reduced by so designing it that no point in the emitter region is more than 300 Á from a point at which the region is shorted to the adjacent base region. The preferred emitter region configuration 5, shown in plan in Fig. 2, is annular with two concentric rings of twentyfour equally spaced circular apertures 12a, 12b through which the base region 2 extends to contact the annular emitter electrode which also extends on to region 2 at the outer periphery of the emitter region, the trigger electrode being disposed centrally within the emitter electrode. The diameters of the inner and outer peripheries of the emitter region and of the inner and outer rings, on which the apertures, which are of 250 Á diameter, are centred are 3000, 5500, 3550 and 4700 Á respectively, giving a maximum distance of 225 Á to a shorted point. In an alternative structure nickel or aluminium protrusions from the emitter electrode penetrate the emitter region to provide the shorts. Further improvement in turn off time without serious impairment of other device parameters is obtainable by moderate doping with gold.
GB3648572A 1972-08-04 1972-08-04 Thyristors and the method of manufacture thereof Expired GB1434905A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB3648572A GB1434905A (en) 1972-08-04 1972-08-04 Thyristors and the method of manufacture thereof
DE19732339440 DE2339440B2 (en) 1972-08-04 1973-08-03 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3648572A GB1434905A (en) 1972-08-04 1972-08-04 Thyristors and the method of manufacture thereof

Publications (1)

Publication Number Publication Date
GB1434905A true GB1434905A (en) 1976-05-12

Family

ID=10388592

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3648572A Expired GB1434905A (en) 1972-08-04 1972-08-04 Thyristors and the method of manufacture thereof

Country Status (2)

Country Link
DE (1) DE2339440B2 (en)
GB (1) GB1434905A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150390A (en) * 1976-10-08 1979-04-17 Bbc Brown, Boveri & Company, Limited Thyristor with gate and emitter shunts distributed over the cathode surface

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50123282A (en) * 1974-03-15 1975-09-27
DE3017584C2 (en) * 1980-05-08 1982-12-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150390A (en) * 1976-10-08 1979-04-17 Bbc Brown, Boveri & Company, Limited Thyristor with gate and emitter shunts distributed over the cathode surface

Also Published As

Publication number Publication date
DE2339440B2 (en) 1975-06-12
DE2339440A1 (en) 1974-02-28

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19930731