GB1419542A - Protective arrangement for field effect transistors - Google Patents

Protective arrangement for field effect transistors

Info

Publication number
GB1419542A
GB1419542A GB475473A GB475473A GB1419542A GB 1419542 A GB1419542 A GB 1419542A GB 475473 A GB475473 A GB 475473A GB 475473 A GB475473 A GB 475473A GB 1419542 A GB1419542 A GB 1419542A
Authority
GB
United Kingdom
Prior art keywords
igfet
gate
resistor
source
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB475473A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB1419542A publication Critical patent/GB1419542A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
GB475473A 1972-01-31 1973-01-31 Protective arrangement for field effect transistors Expired GB1419542A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47011194A JPS5132511B2 (fr) 1972-01-31 1972-01-31

Publications (1)

Publication Number Publication Date
GB1419542A true GB1419542A (en) 1975-12-31

Family

ID=11771233

Family Applications (1)

Application Number Title Priority Date Filing Date
GB475473A Expired GB1419542A (en) 1972-01-31 1973-01-31 Protective arrangement for field effect transistors

Country Status (7)

Country Link
JP (1) JPS5132511B2 (fr)
CA (1) CA999654A (fr)
CH (1) CH552285A (fr)
FR (1) FR2170022B1 (fr)
GB (1) GB1419542A (fr)
IT (1) IT977703B (fr)
NL (1) NL158324B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851721A (en) * 1987-02-24 1989-07-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
JPS5226881U (fr) * 1975-08-14 1977-02-24
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
US4751473A (en) * 1985-11-05 1988-06-14 Mitsubishi Denki Kabushiki Kaisha FET amplifier circuit
US4737733A (en) * 1986-10-29 1988-04-12 Rca Corporation Overdrive control of FET power amplifier
JPH0693613B2 (ja) * 1987-01-16 1994-11-16 三菱電機株式会社 Ｍｉｓトランジスタ回路
US8804290B2 (en) * 2012-01-17 2014-08-12 Texas Instruments Incorporated Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851721A (en) * 1987-02-24 1989-07-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit

Also Published As

Publication number Publication date
NL158324B (nl) 1978-10-16
CH552285A (de) 1974-07-31
DE2304710B2 (de) 1975-07-03
FR2170022A1 (fr) 1973-09-14
DE2304710A1 (de) 1973-08-09
IT977703B (it) 1974-09-20
FR2170022B1 (fr) 1976-04-30
NL7301309A (fr) 1973-08-02
JPS4881485A (fr) 1973-10-31
CA999654A (en) 1976-11-09
JPS5132511B2 (fr) 1976-09-13

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19930129