GB1415445A - Method of measuring strain and a high sensitivity semiconductor strain transducer assembly - Google Patents
Method of measuring strain and a high sensitivity semiconductor strain transducer assemblyInfo
- Publication number
- GB1415445A GB1415445A GB3419373A GB3419373A GB1415445A GB 1415445 A GB1415445 A GB 1415445A GB 3419373 A GB3419373 A GB 3419373A GB 3419373 A GB3419373 A GB 3419373A GB 1415445 A GB1415445 A GB 1415445A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- strain
- gold
- aluminium
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 230000035945 sensitivity Effects 0.000 title abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 6
- 239000010931 gold Substances 0.000 abstract 6
- 229910052737 gold Inorganic materials 0.000 abstract 5
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910052733 gallium Inorganic materials 0.000 abstract 3
- 229910052738 indium Inorganic materials 0.000 abstract 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 3
- 229910052709 silver Inorganic materials 0.000 abstract 3
- 239000004332 silver Substances 0.000 abstract 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 238000000429 assembly Methods 0.000 abstract 2
- 230000000712 assembly Effects 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 239000010949 copper Substances 0.000 abstract 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 238000001771 vacuum deposition Methods 0.000 abstract 2
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 1
- 229910001069 Ti alloy Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000370 acceptor Substances 0.000 abstract 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052794 bromium Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229960003280 cupric chloride Drugs 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00276269A US3805601A (en) | 1972-07-28 | 1972-07-28 | High sensitivity semiconductor strain gauge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1415445A true GB1415445A (en) | 1975-11-26 |
Family
ID=23055944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3419373A Expired GB1415445A (en) | 1972-07-28 | 1973-07-18 | Method of measuring strain and a high sensitivity semiconductor strain transducer assembly |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2550885A1 (fr) * | 1983-08-18 | 1985-02-22 | Transamerica Delaval Inc | Perfectionnements aux procedes pour appliquer un materiau semi-conducteur sur un substrat |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314011B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-10-13 | 1978-05-15 | ||
| US4089927A (en) * | 1975-09-26 | 1978-05-16 | Minnesota Mining And Manufacturing Company | Strain sensor employing bi layer piezoelectric polymer |
| US4078226A (en) * | 1977-03-16 | 1978-03-07 | The United States Of America As Represented By The United States Department Of Energy | Input apparatus for dynamic signature verification systems |
| US4141025A (en) * | 1977-03-24 | 1979-02-20 | Gosudarstvenny Nauchno-Issle-Dovatelsky I Proektny Institut Redkometallicheskoi Promyshlennosti "GIREDMET" | Semiconductor structure sensitive to pressure |
| US4131880A (en) * | 1977-10-26 | 1978-12-26 | Burroughs Corporation | Signature verification pen |
| FR2496380A1 (fr) * | 1980-12-15 | 1982-06-18 | Thomson Csf | Dispositif piezoresistif a commande electrique |
| US4683755A (en) * | 1985-11-15 | 1987-08-04 | Imo Delaval Inc. | Biaxial strain gage systems |
| US5483088A (en) * | 1994-08-12 | 1996-01-09 | S.R.I. International | Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0≦y≦1 |
| US5410178A (en) * | 1994-08-22 | 1995-04-25 | Northwestern University | Semiconductor films |
| JP3736853B2 (ja) * | 1995-04-30 | 2006-01-18 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | バッテリ再充電装置 |
| US6058934A (en) * | 1995-11-02 | 2000-05-09 | Chiron Diagnostics Corporation | Planar hematocrit sensor incorporating a seven-electrode conductivity measurement cell |
| US5743985A (en) * | 1996-10-31 | 1998-04-28 | Owens-Corning Fiberglas Technology, Inc. | Method of making an asphalt and fiber laminated insulation product |
| US6729187B1 (en) * | 1999-04-29 | 2004-05-04 | The Board Of Governors For Higher Education, State Of Rhode Island And Providence Plantations | Self-compensated ceramic strain gage for use at high temperatures |
| WO2002093740A1 (fr) * | 2001-05-11 | 2002-11-21 | Ube Electronics, Ltd. | Resonateur d'onde acoustique en volume a couche mince |
| US6579735B1 (en) * | 2001-12-03 | 2003-06-17 | Xerox Corporation | Method for fabricating GaN field emitter arrays |
| US6781159B2 (en) * | 2001-12-03 | 2004-08-24 | Xerox Corporation | Field emission display device |
| US20050115329A1 (en) * | 2003-10-23 | 2005-06-02 | Gregory Otto J. | High temperature strain gages |
| JP4852041B2 (ja) * | 2004-08-10 | 2012-01-11 | デイジ プレシジョン インダストリーズ リミテッド | 剪断試験装置 |
| US7185545B2 (en) * | 2004-12-29 | 2007-03-06 | General Electric Company | Instrumentation and method for monitoring change in electric potential to detect crack growth |
| US20100237747A1 (en) * | 2005-12-19 | 2010-09-23 | Physical Logic Ag | Piezoelectric Composite Material |
| JP5060494B2 (ja) * | 2006-02-17 | 2012-10-31 | デイジ プレシジョン インダストリーズ リミテッド | せん断試験装置 |
| US8841818B2 (en) * | 2011-08-12 | 2014-09-23 | Massachusetts Institute Of Technology | Piezoelectric electromechanical devices |
| US9726587B2 (en) * | 2015-01-30 | 2017-08-08 | Stmicroelectronics S.R.L. | Tensile stress measurement device with attachment plates and related methods |
| EP3313777B1 (en) * | 2015-06-26 | 2020-11-04 | Intel Corporation | Group iii-n mems structures on a silicon substrate |
| US11585204B2 (en) | 2020-05-26 | 2023-02-21 | Heath Poulson | Crowding avoidance apparatus and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1226647A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1967-04-28 | 1971-03-31 | ||
| US3492513A (en) * | 1967-07-27 | 1970-01-27 | Lewis E Hollander Jr | Mesa t-bar piezoresistor |
| US3673354A (en) * | 1969-05-08 | 1972-06-27 | Matsushita Electric Ind Co Ltd | Semiconductor stress transducer |
-
1972
- 1972-07-28 US US00276269A patent/US3805601A/en not_active Expired - Lifetime
-
1973
- 1973-07-18 GB GB3419373A patent/GB1415445A/en not_active Expired
- 1973-07-26 DE DE19732337973 patent/DE2337973A1/de active Pending
- 1973-07-27 FR FR7327622A patent/FR2194963B1/fr not_active Expired
- 1973-07-27 JP JP48084210A patent/JPS4946877A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2550885A1 (fr) * | 1983-08-18 | 1985-02-22 | Transamerica Delaval Inc | Perfectionnements aux procedes pour appliquer un materiau semi-conducteur sur un substrat |
| GB2145284A (en) * | 1983-08-18 | 1985-03-20 | Transamerica Delaval Inc | Processes for applying a semiconductor material to a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2194963A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-03-01 |
| FR2194963B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-05-07 |
| US3805601A (en) | 1974-04-23 |
| JPS4946877A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-05-07 |
| DE2337973A1 (de) | 1974-02-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |