GB1411192A - Photodiode - Google Patents
PhotodiodeInfo
- Publication number
- GB1411192A GB1411192A GB1127573A GB1127573A GB1411192A GB 1411192 A GB1411192 A GB 1411192A GB 1127573 A GB1127573 A GB 1127573A GB 1127573 A GB1127573 A GB 1127573A GB 1411192 A GB1411192 A GB 1411192A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrates
- vapour
- cdse
- type
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25120572A | 1972-05-08 | 1972-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1411192A true GB1411192A (en) | 1975-10-22 |
Family
ID=22950930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1127573A Expired GB1411192A (en) | 1972-05-08 | 1973-03-08 | Photodiode |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3796882A (enExample) |
| JP (1) | JPS4924381A (enExample) |
| DE (1) | DE2314422A1 (enExample) |
| FR (1) | FR2183707B1 (enExample) |
| GB (1) | GB1411192A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269361U (enExample) * | 1975-11-14 | 1977-05-23 | ||
| JPS5545449A (en) * | 1978-09-26 | 1980-03-31 | Nobutoshi Kida | Foldable unbrella folded to small shape |
| JPS5599206A (en) * | 1979-01-25 | 1980-07-29 | Akira Maruyama | Foldable umbrella |
| HU179455B (en) * | 1979-07-16 | 1982-10-28 | Energiagazdalkodasi Intezet | Ribbed device improving the heat transfer composed from sheet strips |
| JPS61154506A (ja) * | 1984-12-26 | 1986-07-14 | 榊原産業株式会社 | 折りたたみ傘の傘骨構造 |
| JPH0436661Y2 (enExample) * | 1988-09-07 | 1992-08-28 | ||
| US5316586A (en) * | 1992-06-26 | 1994-05-31 | California Institute Of Technology | Silicon sample holder for molecular beam epitaxy on pre-fabricated integrated circuits |
| US7323228B1 (en) * | 2003-10-29 | 2008-01-29 | Lsi Logic Corporation | Method of vaporizing and ionizing metals for use in semiconductor processing |
| JP4941754B2 (ja) * | 2007-09-05 | 2012-05-30 | ソニー株式会社 | 蒸着装置 |
| CN114000108B (zh) * | 2021-10-30 | 2023-10-17 | 平顶山学院 | 在ZnSe/Si异质结界面嵌入CdSe调控层的制备方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5130438B1 (enExample) * | 1970-04-06 | 1976-09-01 |
-
1972
- 1972-05-08 US US00251205A patent/US3796882A/en not_active Expired - Lifetime
-
1973
- 1973-03-08 GB GB1127573A patent/GB1411192A/en not_active Expired
- 1973-03-23 DE DE19732314422 patent/DE2314422A1/de active Pending
- 1973-03-30 FR FR7313779*A patent/FR2183707B1/fr not_active Expired
- 1973-04-11 JP JP48040530A patent/JPS4924381A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2183707A1 (enExample) | 1973-12-21 |
| US3796882A (en) | 1974-03-12 |
| DE2314422A1 (de) | 1973-11-29 |
| JPS4924381A (enExample) | 1974-03-04 |
| FR2183707B1 (enExample) | 1976-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1411192A (en) | Photodiode | |
| US3716424A (en) | Method of preparation of lead sulfide pn junction diodes | |
| GB1282167A (en) | Process for vapour growing thin films | |
| GB1536412A (en) | Photocathodes | |
| FR2292517B1 (enExample) | ||
| SE7609616L (sv) | Anordning for avsettning av beleggningar genom kemisk paangning | |
| EP0174743A3 (en) | Process for transition metal nitrides thin film deposition | |
| TW331652B (en) | Thin film vapor deposition apparatus | |
| JPS5210869A (en) | Thin film forming method | |
| JPS55129782A (en) | Radiant ray detector | |
| JPS523583A (en) | Crystal film forming process | |
| US3490961A (en) | Method of producing silicon body | |
| GB1341787A (en) | Methods of depositing semiconductor material on a substrate | |
| GB1118757A (en) | Method of depositing silicon nitride films | |
| GB1291070A (en) | Pyrolytic deposition of silicon nitride films | |
| GB1320998A (en) | Process for preparing a layer of compounds of groups iib and vib | |
| EP0331448A3 (en) | Forming aluminium nitride films | |
| JPS5749263A (en) | Manufacture of close contact type image sensor | |
| GB1440357A (en) | Method for making amorphous semiconductor films | |
| US3603285A (en) | Vapor deposition apparatus | |
| FR2114105A5 (en) | Epitaxial radiation heated reactor - including a quartz reaction chamber | |
| GB1093525A (en) | Improvements in or relating to arrangements for the manufacture of electronic element s | |
| GB1497573A (en) | Method for producing an electrophotographic recording material | |
| GB1498459A (en) | Growing semiconductor epitaxial films | |
| GB1308291A (en) | Evaporation sources for depositing thin films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |