GB1394062A - Semi-conductor devices - Google Patents
Semi-conductor devicesInfo
- Publication number
- GB1394062A GB1394062A GB4685071A GB4685071A GB1394062A GB 1394062 A GB1394062 A GB 1394062A GB 4685071 A GB4685071 A GB 4685071A GB 4685071 A GB4685071 A GB 4685071A GB 1394062 A GB1394062 A GB 1394062A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- nickel
- chip
- aperture
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Fuses (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
1394062 Semi-conductor devices LUCAS ELECTRICAL CO Ltd 3 Oct 1972 [8 Oct 1971] 46850/71 Heading H1K A semi-conductor chip is provided with an upstanding metal land through which it may be soldered to a conductive substrate or a conductive land on an insulating substrate by the following method. The chip 11 (Fig. 2) e.g. of silicon is first provided with an aluminium layer 12, part of which is exposed through an aperture 14 in silica glass layer 13. A 500 Š thick layer 16 of chromium, titanium or tungsten and a 1000 Š layer 17 of nickel or copper are deposited to extend into the aperture and are covered with photoresist 18 which is exposed and developed to expose the part of layer 17 within aperture 14. The chip is then immersed in a nickel chloride plating bath and connected first as anode to clean the surface of layer 17 and then as cathode to deposit nickel 21, which is further built up by electroplating in a nickel sulphamate bath and then gold plated to prevent it tarnishing. After removal of the photoresist the layers 16, 17 where not protected by the nickel 21 are etched away in a mixture of ceric sulphate and sulphuric acid. The chip may then be mounted to an insulating substrate by inverting it to bring the land 21 and any other similar lands into contact with solder coated lands on the substrate and heating to fuse the solder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4685071A GB1394062A (en) | 1971-10-08 | 1971-10-08 | Semi-conductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4685071A GB1394062A (en) | 1971-10-08 | 1971-10-08 | Semi-conductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1394062A true GB1394062A (en) | 1975-05-14 |
Family
ID=10442821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4685071A Expired GB1394062A (en) | 1971-10-08 | 1971-10-08 | Semi-conductor devices |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1394062A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0178181A2 (en) * | 1984-10-12 | 1986-04-16 | Tektronix, Inc. | Methods for producing an aperture in a surface |
GB2194386A (en) * | 1986-08-20 | 1988-03-02 | Plessey Co Plc | Solder bonded integrated circuit devices |
-
1971
- 1971-10-08 GB GB4685071A patent/GB1394062A/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0178181A2 (en) * | 1984-10-12 | 1986-04-16 | Tektronix, Inc. | Methods for producing an aperture in a surface |
EP0178181A3 (en) * | 1984-10-12 | 1987-08-19 | Tektronix, Inc. | Methods for producing an aperture in a surface |
GB2194386A (en) * | 1986-08-20 | 1988-03-02 | Plessey Co Plc | Solder bonded integrated circuit devices |
GB2194386B (en) * | 1986-08-20 | 1990-07-18 | Plessey Co Plc | Solder bonded integrated circuit devices |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |