GB1384224A - Selective irradiation of junctioned semiconductor devices - Google Patents

Selective irradiation of junctioned semiconductor devices

Info

Publication number
GB1384224A
GB1384224A GB3958373A GB3958373A GB1384224A GB 1384224 A GB1384224 A GB 1384224A GB 3958373 A GB3958373 A GB 3958373A GB 3958373 A GB3958373 A GB 3958373A GB 1384224 A GB1384224 A GB 1384224A
Authority
GB
United Kingdom
Prior art keywords
silicon
transistor
irradiation
aug
range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3958373A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB1384224A publication Critical patent/GB1384224A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
GB3958373A 1972-08-25 1973-08-15 Selective irradiation of junctioned semiconductor devices Expired GB1384224A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US283684A US3872493A (en) 1972-08-25 1972-08-25 Selective irradiation of junctioned semiconductor devices

Publications (1)

Publication Number Publication Date
GB1384224A true GB1384224A (en) 1975-02-19

Family

ID=23087110

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3958373A Expired GB1384224A (en) 1972-08-25 1973-08-15 Selective irradiation of junctioned semiconductor devices

Country Status (5)

Country Link
US (1) US3872493A (enExample)
JP (1) JPS5620710B2 (enExample)
BE (1) BE803869A (enExample)
CA (1) CA980462A (enExample)
GB (1) GB1384224A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1443434A (en) * 1973-01-22 1976-07-21 Mullard Ltd Semiconductor devices
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US5284780A (en) * 1989-09-28 1994-02-08 Siemens Aktiengesellschaft Method for increasing the electric strength of a multi-layer semiconductor component
JPH05160391A (ja) * 1991-12-02 1993-06-25 Sankooshiya:Kk サージ防護デバイスの保持電流制御方法
DE4306320B4 (de) * 1993-03-01 2004-08-05 Infineon Technologies Ag Verfahren zur Erhöhung der Spannungsfestigkeit eines mehrschichtigen Halbleiterbauelements
US7940558B2 (en) * 2007-12-21 2011-05-10 Qimonda Ag Integrated circuit comprising a thyristor and method of controlling a memory cell comprising a thyristor
JP6950185B2 (ja) * 2017-01-12 2021-10-13 三菱電機株式会社 高電子移動度トランジスタの製造方法、高電子移動度トランジスタ
CN113976484B (zh) * 2021-12-28 2022-03-11 南京日托光伏新能源有限公司 太阳能电池分档漏电筛选方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE219804C1 (enExample) * 1963-07-01 1956-04-02
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3422323A (en) * 1966-03-18 1969-01-14 Mallory & Co Inc P R Five-layer light-actuated semiconductor device having bevelled sides
US3532910A (en) * 1968-07-29 1970-10-06 Bell Telephone Labor Inc Increasing the power output of certain diodes
US3564357A (en) * 1969-03-26 1971-02-16 Ckd Praha Multilayer semiconductor device with reduced surface current

Also Published As

Publication number Publication date
CA980462A (en) 1975-12-23
JPS5620710B2 (enExample) 1981-05-15
JPS4967581A (enExample) 1974-07-01
US3872493A (en) 1975-03-18
BE803869A (fr) 1974-02-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19930814