BE803869A - Irradiation selective de dispositifs semi-conducteurs a jonctions - Google Patents

Irradiation selective de dispositifs semi-conducteurs a jonctions

Info

Publication number
BE803869A
BE803869A BE1005306A BE1005306A BE803869A BE 803869 A BE803869 A BE 803869A BE 1005306 A BE1005306 A BE 1005306A BE 1005306 A BE1005306 A BE 1005306A BE 803869 A BE803869 A BE 803869A
Authority
BE
Belgium
Prior art keywords
junctions
semiconductor devices
selective irradiation
irradiation
selective
Prior art date
Application number
BE1005306A
Other languages
English (en)
French (fr)
Inventor
J S Roberts
M W Cresswell
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE803869A publication Critical patent/BE803869A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
BE1005306A 1972-08-25 1973-08-22 Irradiation selective de dispositifs semi-conducteurs a jonctions BE803869A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US283684A US3872493A (en) 1972-08-25 1972-08-25 Selective irradiation of junctioned semiconductor devices

Publications (1)

Publication Number Publication Date
BE803869A true BE803869A (fr) 1974-02-22

Family

ID=23087110

Family Applications (1)

Application Number Title Priority Date Filing Date
BE1005306A BE803869A (fr) 1972-08-25 1973-08-22 Irradiation selective de dispositifs semi-conducteurs a jonctions

Country Status (5)

Country Link
US (1) US3872493A (xx)
JP (1) JPS5620710B2 (xx)
BE (1) BE803869A (xx)
CA (1) CA980462A (xx)
GB (1) GB1384224A (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113976484A (zh) * 2021-12-28 2022-01-28 南京日托光伏新能源有限公司 太阳能电池分档漏电筛选方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1443434A (en) * 1973-01-22 1976-07-21 Mullard Ltd Semiconductor devices
US4177477A (en) * 1974-03-11 1979-12-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor switching device
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
US4240844A (en) * 1978-12-22 1980-12-23 Westinghouse Electric Corp. Reducing the switching time of semiconductor devices by neutron irradiation
US4311534A (en) * 1980-06-27 1982-01-19 Westinghouse Electric Corp. Reducing the reverse recovery charge of thyristors by nuclear irradiation
US5284780A (en) * 1989-09-28 1994-02-08 Siemens Aktiengesellschaft Method for increasing the electric strength of a multi-layer semiconductor component
JPH05160391A (ja) * 1991-12-02 1993-06-25 Sankooshiya:Kk サージ防護デバイスの保持電流制御方法
DE4306320B4 (de) * 1993-03-01 2004-08-05 Infineon Technologies Ag Verfahren zur Erhöhung der Spannungsfestigkeit eines mehrschichtigen Halbleiterbauelements
US7940558B2 (en) * 2007-12-21 2011-05-10 Qimonda Ag Integrated circuit comprising a thyristor and method of controlling a memory cell comprising a thyristor
JP6950185B2 (ja) * 2017-01-12 2021-10-13 三菱電機株式会社 高電子移動度トランジスタの製造方法、高電子移動度トランジスタ

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366793A (en) * 1963-07-01 1968-01-30 Asea Ab Optically coupled semi-conductor reactifier with increased blocking voltage
US3442722A (en) * 1964-12-16 1969-05-06 Siemens Ag Method of making a pnpn thyristor
US3422323A (en) * 1966-03-18 1969-01-14 Mallory & Co Inc P R Five-layer light-actuated semiconductor device having bevelled sides
US3532910A (en) * 1968-07-29 1970-10-06 Bell Telephone Labor Inc Increasing the power output of certain diodes
US3564357A (en) * 1969-03-26 1971-02-16 Ckd Praha Multilayer semiconductor device with reduced surface current

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113976484A (zh) * 2021-12-28 2022-01-28 南京日托光伏新能源有限公司 太阳能电池分档漏电筛选方法

Also Published As

Publication number Publication date
CA980462A (en) 1975-12-23
US3872493A (en) 1975-03-18
JPS5620710B2 (xx) 1981-05-15
GB1384224A (en) 1975-02-19
JPS4967581A (xx) 1974-07-01

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: WESTINGHOUSE ELECTRIC CORP.

Effective date: 19910831