GB1413369A - Low level irradiation to improve blocking voltage yield of junction semiconductors - Google Patents
Low level irradiation to improve blocking voltage yield of junction semiconductorsInfo
- Publication number
- GB1413369A GB1413369A GB3958273A GB3958273A GB1413369A GB 1413369 A GB1413369 A GB 1413369A GB 3958273 A GB3958273 A GB 3958273A GB 3958273 A GB3958273 A GB 3958273A GB 1413369 A GB1413369 A GB 1413369A
- Authority
- GB
- United Kingdom
- Prior art keywords
- electrons
- mev
- blocking voltage
- low level
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000000903 blocking effect Effects 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thyristors (AREA)
Abstract
1413369 Semi-conductor devices WESTINGHOUSE ELECTRIC CORP 15 Aug 1973 [31 Aug 1972] 39582/73 Heading H1K The blocking voltage of some junctioned semi-conductor devices is stated to be increased without significantly increasing the forward voltage drop by irradiation with electrons having an energy level greater than 1 Mev. at a concentration less than 10<SP>13</SP> electrons cm.<SP>-2</SP>. The level of exposure should not exceed that of 2 Mev electrons at 10<SP>13</SP> electrons cm.<SP>-2</SP>. Devices described are silicon thyristors passivated with silicone or epoxy resins. Specific batches are exposed to 2 Mev. electron radiation at 1.10<SP>12</SP> electrons cm.<SP>-2</SP>, 1.72.10<SP>12</SP> electrons cm.<SP>-2</SP>, and 2.0.10<SP>12</SP> electrons cm.<SP>-2</SP>. Suitable devices for treatment also include transistors but not simple rectifying diodes.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28516572A | 1972-08-31 | 1972-08-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1413369A true GB1413369A (en) | 1975-11-12 |
Family
ID=23093039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3958273A Expired GB1413369A (en) | 1972-08-31 | 1973-08-15 | Low level irradiation to improve blocking voltage yield of junction semiconductors |
Country Status (3)
| Country | Link |
|---|---|
| BE (1) | BE804194A (en) |
| CA (1) | CA990862A (en) |
| GB (1) | GB1413369A (en) |
-
1973
- 1973-08-10 CA CA178,538A patent/CA990862A/en not_active Expired
- 1973-08-15 GB GB3958273A patent/GB1413369A/en not_active Expired
- 1973-08-30 BE BE1005322A patent/BE804194A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CA990862A (en) | 1976-06-08 |
| BE804194A (en) | 1974-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1449751A (en) | Annealing to control gate sensitivity of thyristors | |
| ES409423A1 (en) | Over voltage protection circuit lateral bipolar transistor with gated collector junction | |
| US3442722A (en) | Method of making a pnpn thyristor | |
| GB1384224A (en) | Selective irradiation of junctioned semiconductor devices | |
| GB1140139A (en) | Process for the production of the semiconductor element and a semiconductor element produced by this process | |
| GB1515836A (en) | Semiconductors | |
| GB1017756A (en) | Energy conversion devices | |
| GB1467173A (en) | Semiconductor diodes | |
| GB1259923A (en) | Method of treating semiconductor devices | |
| US3257570A (en) | Semiconductor device | |
| US3877997A (en) | Selective irradiation for fast switching thyristor with low forward voltage drop | |
| GB1437127A (en) | Selective irradiation of gated semiconductor devices to control gate sensitivity | |
| US3809582A (en) | Irradiation for fast recovery of high power junction diodes | |
| GB1413370A (en) | Irradiation for fast switching thyristors | |
| GB1413369A (en) | Low level irradiation to improve blocking voltage yield of junction semiconductors | |
| Blackburn et al. | The effect of ionizing radiation on the breakdown voltage of power MOSFETs | |
| GB1128480A (en) | High voltage semiconductor device with electrical gradient-reducing groove | |
| GB1251456A (en) | ||
| GB1368119A (en) | Semiconductor devices having low minority carrier lifetime and process for producing same | |
| JPS5538058A (en) | Semiconductor device | |
| GB1455793A (en) | Method of fabricating a diode | |
| GB1420387A (en) | Overvoltage limiting circuit arrangement | |
| SU646706A1 (en) | Method of treating semiconductor detectors | |
| Stone et al. | On the globally optimum M-ary noncoherent digital communication system | |
| MISHCHENKO | The effect of radiations on the volt-ampere characteristics of tunnel diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |