GB1383592A - Czochralski grown spinel substrate by solid state diffusion - Google Patents

Czochralski grown spinel substrate by solid state diffusion

Info

Publication number
GB1383592A
GB1383592A GB496272A GB496272A GB1383592A GB 1383592 A GB1383592 A GB 1383592A GB 496272 A GB496272 A GB 496272A GB 496272 A GB496272 A GB 496272A GB 1383592 A GB1383592 A GB 1383592A
Authority
GB
United Kingdom
Prior art keywords
magnesium aluminate
aluminate spinel
combination
alumina powder
czochralski grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB496272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1383592A publication Critical patent/GB1383592A/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
    • B01J21/005—Spinels
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H10P14/2921—
    • H10P14/3238—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/154—Solid phase epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
GB496272A 1971-02-09 1972-02-02 Czochralski grown spinel substrate by solid state diffusion Expired GB1383592A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11397271A 1971-02-09 1971-02-09

Publications (1)

Publication Number Publication Date
GB1383592A true GB1383592A (en) 1974-02-12

Family

ID=22352606

Family Applications (1)

Application Number Title Priority Date Filing Date
GB496272A Expired GB1383592A (en) 1971-02-09 1972-02-02 Czochralski grown spinel substrate by solid state diffusion

Country Status (9)

Country Link
US (1) US3740261A (enExample)
BE (1) BE779055A (enExample)
CA (1) CA966041A (enExample)
DE (1) DE2202721A1 (enExample)
FR (1) FR2124291B1 (enExample)
GB (1) GB1383592A (enExample)
IT (1) IT946902B (enExample)
NL (1) NL7201640A (enExample)
SE (1) SE369040B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2255855A (en) * 1991-05-13 1992-11-18 Integrated Plasma Ltd Plasma deposition and etching of substrates.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4382997A (en) * 1980-09-04 1983-05-10 The Dow Chemical Company Spinel surfaced objects
US4728635A (en) * 1986-04-07 1988-03-01 Katalistiks International Inc. Alkaline earth metal spinels and processes for making

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2255855A (en) * 1991-05-13 1992-11-18 Integrated Plasma Ltd Plasma deposition and etching of substrates.

Also Published As

Publication number Publication date
SE369040B (enExample) 1974-08-05
BE779055A (fr) 1972-05-30
FR2124291A1 (enExample) 1972-09-22
US3740261A (en) 1973-06-19
CA966041A (en) 1975-04-15
NL7201640A (enExample) 1972-08-11
FR2124291B1 (enExample) 1974-10-18
IT946902B (it) 1973-05-21
DE2202721A1 (de) 1972-08-24

Similar Documents

Publication Publication Date Title
ROSSI et al. Epitaxial growth of spinel by reaction in the solid state
GB1392161A (en) Method of producing ceramics of silicon nitride
IE41507L (en) Magnesium aluminium spinel
GB1252851A (enExample)
MX170077B (es) Metodo para fabricar una particula abrasiva y producto resultante
GB1044848A (en) Method for producing homogeneous crystals of mixed semiconductive materials
DE3460366D1 (en) Silicon aluminium oxynitride ceramic product and method of production
GB1415431A (en) Monolithic refractory material
EP0277811A3 (en) Optically transparent yttrium oxide
GB1434136A (en) Sintered refractory material
CA957250A (en) Method of producing semiconducting monocrystalline silicon and spinel substrates
GB1383592A (en) Czochralski grown spinel substrate by solid state diffusion
GB1202260A (en) Method for preparing solid state ionic conductor
GB1229508A (enExample)
GB1150335A (en) Process for making Current Limiting Devices
GB1054631A (enExample)
GB1296198A (enExample)
FR2158634A5 (en) Hexagonal silicon carbide mfr - by sublimation in sealed crucible
GB1402988A (en) Manufacture of a ceramic
GB1427879A (en) Neadymium ultraphosphates
GB1312796A (en) Ceramic porcelain
DE3471647D1 (en) Process for making a fully-crystalline silicon nitride sintered body
ISKOE et al. Effect of selected impurities on the high temperature mechanical properties of hot-pressed silicon nitride[Final Report]
FR2143069A1 (en) Smooth ceramic substrate - for microcircuits consisting of very dense aluminium oxide with nonporous surface
CA940019A (en) Manufacture of silicon monocrystals

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees