GB1383533A - Electrical components - Google Patents
Electrical componentsInfo
- Publication number
- GB1383533A GB1383533A GB355672A GB355672A GB1383533A GB 1383533 A GB1383533 A GB 1383533A GB 355672 A GB355672 A GB 355672A GB 355672 A GB355672 A GB 355672A GB 1383533 A GB1383533 A GB 1383533A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- junction
- resistance
- electrode
- depletion region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19712104862 DE2104862C3 (de) | 1971-02-02 | Lastwiderstand für eine monolithisch integrierte Schaltung | |
DE19722202488 DE2202488A1 (de) | 1971-02-02 | 1972-01-19 | Hochohmiger widerstand fuer integrierte schaltung, insbesondere fuer halbleiterspeicherelemente |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1383533A true GB1383533A (en) | 1974-02-12 |
Family
ID=25760611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB355672A Expired GB1383533A (en) | 1971-02-02 | 1972-01-26 | Electrical components |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS496884A (de) |
BE (1) | BE778647A (de) |
DE (1) | DE2202488A1 (de) |
FR (1) | FR2124302B1 (de) |
GB (1) | GB1383533A (de) |
IT (1) | IT947090B (de) |
LU (1) | LU64688A1 (de) |
NL (1) | NL7201245A (de) |
-
1972
- 1972-01-19 DE DE19722202488 patent/DE2202488A1/de active Pending
- 1972-01-26 GB GB355672A patent/GB1383533A/en not_active Expired
- 1972-01-28 IT IT1994072A patent/IT947090B/it active
- 1972-01-28 BE BE778647A patent/BE778647A/xx unknown
- 1972-01-31 FR FR7203058A patent/FR2124302B1/fr not_active Expired
- 1972-01-31 NL NL7201245A patent/NL7201245A/xx unknown
- 1972-01-31 LU LU64688D patent/LU64688A1/xx unknown
- 1972-10-20 JP JP47105208A patent/JPS496884A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2202488A1 (de) | 1973-07-26 |
DE2104862A1 (de) | 1972-08-10 |
FR2124302B1 (de) | 1977-09-02 |
LU64688A1 (de) | 1972-06-26 |
BE778647A (fr) | 1972-05-16 |
NL7201245A (de) | 1972-08-04 |
FR2124302A1 (de) | 1972-09-22 |
IT947090B (it) | 1973-05-21 |
JPS496884A (de) | 1974-01-22 |
DE2104862B2 (de) | 1976-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2954486A (en) | Semiconductor resistance element | |
US3512058A (en) | High voltage transient protection for an insulated gate field effect transistor | |
US4963970A (en) | Vertical MOSFET device having protector | |
GB883906A (en) | Improvements in semi-conductive arrangements | |
GB1065150A (en) | Semiconductor switch | |
KR890011119A (ko) | 쇼트키배리어 반도체장치 | |
GB1393792A (en) | Field effect transistor | |
US3611066A (en) | Thyristor with integrated ballasted gate auxiliary thyristor portion | |
GB1016095A (en) | Semiconductor switching device | |
GB971261A (en) | Improvements in semiconductor devices | |
US3078196A (en) | Semiconductive switch | |
JPS5595370A (en) | Compound semiconductor field-effect transistor | |
GB1394183A (en) | Semiconductor devices | |
GB1060208A (en) | Avalanche transistor | |
US3169197A (en) | Semiconductor switching arrangement with device using depletion layer to interrupt current path | |
GB994883A (en) | Semiconductor diode | |
GB1383533A (en) | Electrical components | |
GB973837A (en) | Improvements in semiconductor devices and methods of making same | |
GB909476A (en) | Semiconductor devices | |
JPH0195568A (ja) | 半導体装置 | |
US4319262A (en) | Integrated-circuit structure including lateral PNP transistor with polysilicon layer bridging gap in collector field relief electrode | |
US3256470A (en) | Controllable semi-conductor device | |
GB1268102A (en) | A semiconductor diode | |
US3990090A (en) | Semiconductor controlled rectifier | |
GB1145075A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |