BE778647A - Resistance de valeur ohmique elevee pour des circuits integres,notamment pour des elements de memoire a semiconducteurs - Google Patents

Resistance de valeur ohmique elevee pour des circuits integres,notamment pour des elements de memoire a semiconducteurs

Info

Publication number
BE778647A
BE778647A BE778647A BE778647A BE778647A BE 778647 A BE778647 A BE 778647A BE 778647 A BE778647 A BE 778647A BE 778647 A BE778647 A BE 778647A BE 778647 A BE778647 A BE 778647A
Authority
BE
Belgium
Prior art keywords
semiconductor memory
integrated circuits
memory elements
value resistance
ohmic value
Prior art date
Application number
BE778647A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712104862 external-priority patent/DE2104862C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE778647A publication Critical patent/BE778647A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
BE778647A 1971-02-02 1972-01-28 Resistance de valeur ohmique elevee pour des circuits integres,notamment pour des elements de memoire a semiconducteurs BE778647A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19712104862 DE2104862C3 (de) 1971-02-02 Lastwiderstand für eine monolithisch integrierte Schaltung
DE19722202488 DE2202488A1 (de) 1971-02-02 1972-01-19 Hochohmiger widerstand fuer integrierte schaltung, insbesondere fuer halbleiterspeicherelemente

Publications (1)

Publication Number Publication Date
BE778647A true BE778647A (fr) 1972-05-16

Family

ID=25760611

Family Applications (1)

Application Number Title Priority Date Filing Date
BE778647A BE778647A (fr) 1971-02-02 1972-01-28 Resistance de valeur ohmique elevee pour des circuits integres,notamment pour des elements de memoire a semiconducteurs

Country Status (8)

Country Link
JP (1) JPS496884A (fr)
BE (1) BE778647A (fr)
DE (1) DE2202488A1 (fr)
FR (1) FR2124302B1 (fr)
GB (1) GB1383533A (fr)
IT (1) IT947090B (fr)
LU (1) LU64688A1 (fr)
NL (1) NL7201245A (fr)

Also Published As

Publication number Publication date
DE2202488A1 (de) 1973-07-26
DE2104862A1 (de) 1972-08-10
FR2124302B1 (fr) 1977-09-02
LU64688A1 (fr) 1972-06-26
NL7201245A (fr) 1972-08-04
FR2124302A1 (fr) 1972-09-22
IT947090B (it) 1973-05-21
GB1383533A (en) 1974-02-12
JPS496884A (fr) 1974-01-22
DE2104862B2 (de) 1976-07-15

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