GB1378876A - Method of making a semiconductor wafer - Google Patents
Method of making a semiconductor waferInfo
- Publication number
- GB1378876A GB1378876A GB4176271A GB4176271A GB1378876A GB 1378876 A GB1378876 A GB 1378876A GB 4176271 A GB4176271 A GB 4176271A GB 4176271 A GB4176271 A GB 4176271A GB 1378876 A GB1378876 A GB 1378876A
- Authority
- GB
- United Kingdom
- Prior art keywords
- groove
- tip
- wafer
- slots
- tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 235000012431 wafers Nutrition 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 1
- 230000013011 mating Effects 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 229910000859 α-Fe Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0088—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1378876 Picking-up tools; working semiconductors SONY CORP 7 Sept 1971 [8 Sept 1970 (2) 30 Oct 1970 5 Feb 1971] 41762/71 Headings B4W and B5E [Also in Divisions B3 and H1] A tool (Fig. 6A) for picking-up apertured semi-conductor wafers is formed from a hollow cylinder with a peripheral groove 52 adjacent one end by cutting two slots 48 from one end parallel to its axis. With the legs defined by the slots pinched together the grooved end of the tool is passed through the aperture in the wafer and the legs released so that the groove engages the walls of the aperture. The tool may have a loop at 54 for hanging on a hook. In a modification with only two slots the ends of the legs are tapered to engage the mating walls of a recess formed in a projection from a holder over which the wafer is to be dropped. The central bore of a rod from which the apertured wafer is sliced is cut ultrasonically. The cutter (Fig. 18) comprises a ferrite or magnetostrictive structure 118 producing longitudinal vibrations which are communicated to a cutting tip 121 shown more clearly in Fig. 19A, by a hollow stainless steel pipe, an odd number of half-wavelengths long, through which water mixed with carborundum is fed to the cutting tip. This tip, the dimensions of which are given, has a groove between two flanges generally of the same profile as the required hole but with angularly offset sets of grooves 131, 132 to allow polishing material entering the cutting area via holes 133 in the groove to escape. The forward end of the tip, which is apertured to leave a core centrally of the hole, is conical.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7858370A JPS5013112B1 (en) | 1970-09-08 | 1970-09-08 | |
JP8942270 | 1970-09-08 | ||
JP9606570A JPS506305B1 (en) | 1970-10-30 | 1970-10-30 | |
JP488571A JPS5217278B1 (en) | 1971-02-05 | 1971-02-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1378876A true GB1378876A (en) | 1974-12-27 |
Family
ID=27454181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4176271A Expired GB1378876A (en) | 1970-09-08 | 1971-09-07 | Method of making a semiconductor wafer |
Country Status (4)
Country | Link |
---|---|
CA (1) | CA970073A (en) |
DE (1) | DE2144942C3 (en) |
GB (1) | GB1378876A (en) |
NL (1) | NL7112376A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2178594A (en) * | 1985-06-24 | 1987-02-11 | Christopher Frank Mcconnell | Vessel and system for treating wafers with fluids |
EP2112967A1 (en) * | 2007-02-22 | 2009-11-04 | Hana Silicon, Inc. | Method for manufacturing silicon matter for plasma processing apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3010866A1 (en) * | 1980-03-21 | 1981-10-01 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Crystal discs cutting system from rod - uses rod rotation about external axis |
DE3716943A1 (en) * | 1987-05-20 | 1988-12-08 | Hans J Scheel | Process and device for separating material, in particular in bar form |
-
1971
- 1971-09-07 CA CA122,211A patent/CA970073A/en not_active Expired
- 1971-09-07 GB GB4176271A patent/GB1378876A/en not_active Expired
- 1971-09-08 NL NL7112376A patent/NL7112376A/xx not_active Application Discontinuation
- 1971-09-08 DE DE19712144942 patent/DE2144942C3/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2178594A (en) * | 1985-06-24 | 1987-02-11 | Christopher Frank Mcconnell | Vessel and system for treating wafers with fluids |
GB2178594B (en) * | 1985-06-24 | 1989-12-20 | Christopher Frank Mcconnell | Vessel and system for treating wafers with fluids |
EP2112967A1 (en) * | 2007-02-22 | 2009-11-04 | Hana Silicon, Inc. | Method for manufacturing silicon matter for plasma processing apparatus |
EP2112967A4 (en) * | 2007-02-22 | 2012-03-28 | Hana Silicon Inc | Method for manufacturing silicon matter for plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
CA970073A (en) | 1975-06-24 |
DE2144942A1 (en) | 1972-04-06 |
DE2144942C3 (en) | 1979-04-05 |
DE2144942B2 (en) | 1978-08-17 |
NL7112376A (en) | 1972-03-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |