GB1377404A - Gallium phosphide light emitting semiconductive materials and methods of preparing the same - Google Patents
Gallium phosphide light emitting semiconductive materials and methods of preparing the sameInfo
- Publication number
- GB1377404A GB1377404A GB3403472A GB3403472A GB1377404A GB 1377404 A GB1377404 A GB 1377404A GB 3403472 A GB3403472 A GB 3403472A GB 3403472 A GB3403472 A GB 3403472A GB 1377404 A GB1377404 A GB 1377404A
- Authority
- GB
- United Kingdom
- Prior art keywords
- acceptor
- complexes
- gap
- july
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 238000004020 luminiscence type Methods 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16504371A | 1971-07-23 | 1971-07-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1377404A true GB1377404A (en) | 1974-12-18 |
Family
ID=22597173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3403472A Expired GB1377404A (en) | 1971-07-23 | 1972-07-20 | Gallium phosphide light emitting semiconductive materials and methods of preparing the same |
Country Status (8)
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2158645A (en) * | 1983-05-10 | 1985-11-13 | Raytheon Co | Semiconductor manufacturing methods |
GB2217943A (en) * | 1988-04-22 | 1989-11-01 | Nat Res Dev | Manufacture of semiconductor or superconductor devices |
-
0
- BE BE786585D patent/BE786585A/xx unknown
-
1972
- 1972-07-19 NL NL7209935A patent/NL7209935A/xx unknown
- 1972-07-20 IT IT69361/72A patent/IT964738B/it active
- 1972-07-20 GB GB3403472A patent/GB1377404A/en not_active Expired
- 1972-07-21 FR FR7226398A patent/FR2147106B1/fr not_active Expired
- 1972-07-22 JP JP7305372A patent/JPS5347679B1/ja active Pending
- 1972-07-24 AU AU44880/72A patent/AU4488072A/en not_active Expired
- 1972-07-25 CA CA147,832A patent/CA982809A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2158645A (en) * | 1983-05-10 | 1985-11-13 | Raytheon Co | Semiconductor manufacturing methods |
GB2217943A (en) * | 1988-04-22 | 1989-11-01 | Nat Res Dev | Manufacture of semiconductor or superconductor devices |
GB2217943B (en) * | 1988-04-22 | 1992-12-23 | Nat Res Dev | Epitaxial deposition. |
Also Published As
Publication number | Publication date |
---|---|
DE2235427B2 (de) | 1977-05-12 |
FR2147106A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-03-09 |
FR2147106B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-04-04 |
IT964738B (it) | 1974-01-31 |
JPS5347679B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-12-22 |
CA982809A (en) | 1976-02-03 |
AU4488072A (en) | 1974-01-31 |
DE2235427A1 (de) | 1973-01-25 |
NL7209935A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-01-25 |
BE786585A (fr) | 1973-01-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1377404A (en) | Gallium phosphide light emitting semiconductive materials and methods of preparing the same | |
GB1470744A (en) | Light emitting semi-conductor devices | |
US3716405A (en) | Vapor transport method for growing crystals | |
US3925121A (en) | Production of semiconductive monocrystals of group iii-v semiconductor compounds | |
GB1494254A (en) | Liquid phase epitaxial growth | |
US4510515A (en) | Epitaxial wafer of compound semiconductor display device | |
GB1442506A (en) | Production of yellow output radiation gallium phosphide lumin escence diodes | |
US4154630A (en) | Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process | |
Brice | The effect of arsenic pressure on crystal efficiency for injection luminescence in gallium arsenide | |
GB2125216A (en) | Znse green light emitting diode | |
GB1176950A (en) | Semiconductor Devices | |
GB1427484A (en) | Method of manufacturing a green light-emitting gallium phosphide device | |
GB1416005A (en) | Method of manufacturing a gallium phsophide red-emitting device | |
JPH0463040B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
GB1285686A (en) | A method of doping a gas-phase semiconductor layer | |
JPH04328878A (ja) | 発光ダイオ−ド用エピタキシャルウエハの製造方法 | |
KR790000630B1 (en) | Method of making green-light emission device for semiconductor | |
EP0735599A3 (en) | Method for growth of a nitrogen-doped gallium phosphide epitaxial layer | |
CA1047636A (en) | Led's having isoelectrically built-in nitrogen | |
KR790000584B1 (en) | Method of making gallium phosphide light emmission element | |
JPH04328823A (ja) | 発光ダイオ−ド用エピタキシャルウエハの製造方法 | |
JPS57183021A (en) | Liquid phase epitaxial growth of gallium phosphide | |
DE2338264C3 (de) | Verfahren zur Herstellung von leuchtenden Galliumphosphid-Dioden | |
JPS5479579A (en) | Manufacture of gap green light emission diode | |
DE2235427C3 (de) | Verfahren zur Herstellung eines zur Lumineszenz befähigten Zweischichtkörpers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |