GB1376665A - Apparatus for pulling semoconductor crystals - Google Patents

Apparatus for pulling semoconductor crystals

Info

Publication number
GB1376665A
GB1376665A GB869272A GB869272A GB1376665A GB 1376665 A GB1376665 A GB 1376665A GB 869272 A GB869272 A GB 869272A GB 869272 A GB869272 A GB 869272A GB 1376665 A GB1376665 A GB 1376665A
Authority
GB
United Kingdom
Prior art keywords
crystal
shaft
float
growth
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB869272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP951771A external-priority patent/JPS5126400B1/ja
Priority claimed from JP8883871A external-priority patent/JPS5210117B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1376665A publication Critical patent/GB1376665A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/22Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1376665 Controlling crystal growth SONY CORP 24 Feb 1972 [25 Feb 1971 8 Nov 1971] 8692/72 Heading B1S A modified crystal-pulling apparatus of the Czochralski-type wherein the rate of growth and diameter of the growing crystal is controlled by a float immersed in a liquid in a tub cooperating with means for pulling up the crystal by comparing the weights of the float and growing crystal whereby the rate of growth of the crystal is automatically controlled. As shown in the figure. Furnace 1 consists of two parts la, and 1b. Disposed in la is a crucible 2 supported by 3. Both 2 and 3 are movable vertically and rotatable by a shaft 4 and are enclosed within a fixed cylindrical heater 13 and insulator 14. In part 1b of the hermetically sealed furnace 1, through a closed bearing 15 is an outer shaft 16 through which crystal pulling shaft 17 is passed. To the lower end of shaft 17 is attached a seed chuck 18 and seed 19. When the seed 19 is immersed in the melt 12, it grows into single crystal 20. Engaged with the upper end of shaft 16 is portion 22a of a vertically moving rack 22. The shaft 16 is also rotatable in the opposite direction to crucible 2 by motor 23 and worm gear 24. The shaft 17 rotates with shaft 16 at a predetermined speed. The shaft 17 is connected to a weight detector 25 through suspension installation 26 to portion 22b of moving rack 22. The latter mesh with rotatable shaft 27 provided on shoulder lc of the furnace 1. The growth control element consists of a bath tub 32 fixedly attached to a stationary table 30 connected to furnace 1. The tub comprises a liquid intake 33 and outlet 34 arranged to maintain a liquid level 31a of the chosen liquid 31. A float 35 immersed in the liquid is connected to a lower end of a rod 38, which rod is connected to a weight detector 37, and a suspension installation 36. The installation 36 is connected as is 26 to portion 22b of the rack 22. The suspension installations 26 and 36, and the weight detectors 25 and 37 are of similar construction. The float is shaped to correspond to the final form of the crystal. The outputs from the weight detectors are compared by circuit 40, passed to processing circuit 41 from which they are delivered to power controller 42, a lift speed controller 43 and a pull up speed controller 44 which respectively control the heater 13, the lift motor 8 and the crystal pull motor 28. In operation at the start of the crystal pulling operation the seed is in contact with the melt whilst the upper end of the float 35 coincides with liquid level 31a. Growth of crystal 20 produces an increase in weight which is shown by detector 25, whilst because of the upward movement of 22a, the float 35 is lifted above liquid level 31a, and accordingly detector 37 shows an increase in weight. If not identical the comparator circuit adjusts the pulling up speed of the crystal. Various other automtaic methods of adjusting the rate of growth of the crystal are also described, e.g. movement of the crucible and temperature adjustment thereof and also movement of the tub upwards to'maintain the float immersed.
GB869272A 1971-02-25 1972-02-24 Apparatus for pulling semoconductor crystals Expired GB1376665A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP951771A JPS5126400B1 (en) 1971-02-25 1971-02-25
JP8883871A JPS5210117B2 (en) 1971-11-08 1971-11-08

Publications (1)

Publication Number Publication Date
GB1376665A true GB1376665A (en) 1974-12-11

Family

ID=26344265

Family Applications (1)

Application Number Title Priority Date Filing Date
GB869272A Expired GB1376665A (en) 1971-02-25 1972-02-24 Apparatus for pulling semoconductor crystals

Country Status (6)

Country Link
CA (1) CA971085A (en)
DE (1) DE2208758C3 (en)
FR (1) FR2126434B1 (en)
GB (1) GB1376665A (en)
IT (1) IT947939B (en)
NL (1) NL162975C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1408658A (en) * 1963-09-26 1965-08-13 Consortium Elektrochem Ind Method for producing and regulating translational movement during the manufacture of masses formed from semiconductors
US3493348A (en) * 1966-07-01 1970-02-03 Ibm Buoyant device in crystal growing
FR2038683A5 (en) * 1969-03-21 1971-01-08 Radiotechnique Compelec Single crystal growing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565598A (en) * 1982-01-04 1986-01-21 The Commonwealth Of Australia Method and apparatus for controlling diameter in Czochralski crystal growth by measuring crystal weight and crystal-melt interface temperature

Also Published As

Publication number Publication date
NL162975B (en) 1980-02-15
IT947939B (en) 1973-05-30
FR2126434A1 (en) 1972-10-06
NL7202422A (en) 1972-08-29
FR2126434B1 (en) 1978-03-03
DE2208758A1 (en) 1972-09-14
DE2208758C3 (en) 1974-06-06
CA971085A (en) 1975-07-15
NL162975C (en) 1980-07-15
DE2208758B2 (en) 1973-10-31

Similar Documents

Publication Publication Date Title
US4203951A (en) Apparatus for growing single crystals from melt with additional feeding of comminuted charge
CA1261715A (en) Apparatus and process for growing monocrystals of semiconductor materials from shallow crucibles by czochralski technique
US5096677A (en) Single crystal pulling apparatus
US4511428A (en) Method of controlling oxygen content and distribution in grown silicon crystals
US3953281A (en) Method and system for growing monocrystalline ingots
US5330729A (en) Single crystal pulling apparatus
GB1068223A (en) Crystal growing method and apparatus
KR960034477A (en) Single crystal growth method and apparatus
US5584930A (en) Method for measuring the diameter of a single crystal ingot
US3822111A (en) Apparatus for pulling up semiconductor crystals
GB1376665A (en) Apparatus for pulling semoconductor crystals
US3342560A (en) Apparatus for pulling semiconductor crystals
US3340016A (en) Producing and regulating translatory movement in the manufacture of semiconductor bodies
US3360405A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
KR102136250B1 (en) High purifying device for metallic materials for compound semiconductors
CN106757316A (en) A kind of single crystal growing furnace
DE2516197A1 (en) Weighing system - esp. for automatic control of crystal growth procedure in pressurised containers
US3493348A (en) Buoyant device in crystal growing
JPH06456Y2 (en) Single crystal pulling device seal structure
JPH06219887A (en) Device for pulling up single crystal
CN218932383U (en) Double-layer heat-preservation czochralski silicon single crystal thermal field
KR0173373B1 (en) Apparatus for pulling oxides single crystal capable of increasing a precision of load cell
CN117026366A (en) Variable-diameter crystal rod drawing equipment and drawing process
JPS63307189A (en) Device for pulling up single crystal
GB1284017A (en) Apparatus for growing crystalline bodies

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee