GB1370120A - Electrical information storage aray - Google Patents

Electrical information storage aray

Info

Publication number
GB1370120A
GB1370120A GB5984671A GB5984671A GB1370120A GB 1370120 A GB1370120 A GB 1370120A GB 5984671 A GB5984671 A GB 5984671A GB 5984671 A GB5984671 A GB 5984671A GB 1370120 A GB1370120 A GB 1370120A
Authority
GB
United Kingdom
Prior art keywords
columns
rows
parallel inputs
inputs
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5984671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB5984671A priority Critical patent/GB1370120A/en
Publication of GB1370120A publication Critical patent/GB1370120A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/38—Digital stores in which the information is moved stepwise, e.g. shift registers two-dimensional, e.g. horizontal and vertical shift registers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/28—Details of pulse systems
    • G01S7/2806—Employing storage or delay devices which preserve the pulse form of the echo signal, e.g. for comparing and combining echoes received during different periods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/188—Organisation of a multiplicity of shift registers, e.g. regeneration, timing or input-output circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measurement Of Velocity Or Position Using Acoustic Or Ultrasonic Waves (AREA)

Abstract

1370120 Digital data stores PLESSEY CO Ltd 6 Dec 1972 [22 Dec 1971] 59846/71 Heading G4C A storage array comprises rows rA, rB and columns c1, c2 each including a multi-stage bucket brigade clocked delay line, there being two stages between each pair of adjacent row-column intersections A1, A2 ..., B1, B2 ... , and the rows and columns being connected to each other at the respective intersections A, B. In operation, parallel inputs I1, I2 are clocked in by pulses td so that capacitors 1hC, 2hC retain a datum charge or are depleted. A subsequent clock pulse te transfers the charge state to be shared between a pair of capacitors such as liC and AnC. Subsequent parallel inputs are shifted in the same way while previous sets of inputs are shifted down the columns. Application of clock pulses if, tg alternately to the rows causes shift left (shift right is also possible) so that corresponding bits of the successive sets of parallel inputs I1, I2 appear together at output terminals OA, OB ... The array may be used in comparing echo signals derived from a repetitive wave transmitted to a target.
GB5984671A 1972-12-06 1972-12-06 Electrical information storage aray Expired GB1370120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5984671A GB1370120A (en) 1972-12-06 1972-12-06 Electrical information storage aray

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5984671A GB1370120A (en) 1972-12-06 1972-12-06 Electrical information storage aray

Publications (1)

Publication Number Publication Date
GB1370120A true GB1370120A (en) 1974-10-09

Family

ID=10484510

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5984671A Expired GB1370120A (en) 1972-12-06 1972-12-06 Electrical information storage aray

Country Status (1)

Country Link
GB (1) GB1370120A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021084A1 (en) * 1979-06-18 1981-01-07 Siemens Aktiengesellschaft Solid-state integrated semi-conductor memory
FR2572574A1 (en) * 1984-10-29 1986-05-02 Raytheon Co MEMORY CELL OF SHIFT REGISTER

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0021084A1 (en) * 1979-06-18 1981-01-07 Siemens Aktiengesellschaft Solid-state integrated semi-conductor memory
FR2572574A1 (en) * 1984-10-29 1986-05-02 Raytheon Co MEMORY CELL OF SHIFT REGISTER

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee