GB1364275A - Mosaic of mos type semiconductor elements - Google Patents

Mosaic of mos type semiconductor elements

Info

Publication number
GB1364275A
GB1364275A GB3717771A GB3717771A GB1364275A GB 1364275 A GB1364275 A GB 1364275A GB 3717771 A GB3717771 A GB 3717771A GB 3717771 A GB3717771 A GB 3717771A GB 1364275 A GB1364275 A GB 1364275A
Authority
GB
United Kingdom
Prior art keywords
matrix
layer
junction
metal
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3717771A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1364275A publication Critical patent/GB1364275A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
GB3717771A 1970-08-07 1971-08-06 Mosaic of mos type semiconductor elements Expired GB1364275A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7029261A FR2101023B1 (enrdf_load_stackoverflow) 1970-08-07 1970-08-07

Publications (1)

Publication Number Publication Date
GB1364275A true GB1364275A (en) 1974-08-21

Family

ID=9059985

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3717771A Expired GB1364275A (en) 1970-08-07 1971-08-06 Mosaic of mos type semiconductor elements

Country Status (4)

Country Link
DE (1) DE2139528C3 (enrdf_load_stackoverflow)
FR (1) FR2101023B1 (enrdf_load_stackoverflow)
GB (1) GB1364275A (enrdf_load_stackoverflow)
NL (1) NL7110738A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor

Also Published As

Publication number Publication date
DE2139528C3 (de) 1980-11-20
NL7110738A (enrdf_load_stackoverflow) 1972-02-09
DE2139528A1 (de) 1972-03-09
FR2101023B1 (enrdf_load_stackoverflow) 1973-11-23
DE2139528B2 (de) 1980-03-27
FR2101023A1 (enrdf_load_stackoverflow) 1972-03-31

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee