FR2101023A1 - - Google Patents

Info

Publication number
FR2101023A1
FR2101023A1 FR7029261A FR7029261A FR2101023A1 FR 2101023 A1 FR2101023 A1 FR 2101023A1 FR 7029261 A FR7029261 A FR 7029261A FR 7029261 A FR7029261 A FR 7029261A FR 2101023 A1 FR2101023 A1 FR 2101023A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7029261A
Other languages
French (fr)
Other versions
FR2101023B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7029261A priority Critical patent/FR2101023B1/fr
Priority to NL7110738A priority patent/NL7110738A/xx
Priority to GB3717771A priority patent/GB1364275A/en
Priority to DE2139528A priority patent/DE2139528C3/de
Publication of FR2101023A1 publication Critical patent/FR2101023A1/fr
Application granted granted Critical
Publication of FR2101023B1 publication Critical patent/FR2101023B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
FR7029261A 1970-08-07 1970-08-07 Expired FR2101023B1 (enrdf_load_stackoverflow)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7029261A FR2101023B1 (enrdf_load_stackoverflow) 1970-08-07 1970-08-07
NL7110738A NL7110738A (enrdf_load_stackoverflow) 1970-08-07 1971-08-04
GB3717771A GB1364275A (en) 1970-08-07 1971-08-06 Mosaic of mos type semiconductor elements
DE2139528A DE2139528C3 (de) 1970-08-07 1971-08-06 Photo-MOS-Anordnung und daraus gebildete Matrix

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7029261A FR2101023B1 (enrdf_load_stackoverflow) 1970-08-07 1970-08-07

Publications (2)

Publication Number Publication Date
FR2101023A1 true FR2101023A1 (enrdf_load_stackoverflow) 1972-03-31
FR2101023B1 FR2101023B1 (enrdf_load_stackoverflow) 1973-11-23

Family

ID=9059985

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7029261A Expired FR2101023B1 (enrdf_load_stackoverflow) 1970-08-07 1970-08-07

Country Status (4)

Country Link
DE (1) DE2139528C3 (enrdf_load_stackoverflow)
FR (1) FR2101023B1 (enrdf_load_stackoverflow)
GB (1) GB1364275A (enrdf_load_stackoverflow)
NL (1) NL7110738A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3459944A (en) * 1966-01-04 1969-08-05 Ibm Photosensitive insulated gate field effect transistor

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
(REVUE FRANCAISE *REVUE TECHNIQUE THOMSON-CSF VOL.1,MARS 1969,PAGES 19-39"INFLUENCE DE L'ILLUMINATION SUR LES SYSTEMES METAL-ISOLANT SEMICONDUCTEUR"J.OLIVIER *
*REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN VOL.9,DEC.1967,PAGE 931"INSULATED ELECTRODE OF ADJUSTABLE POTENTIAL") *
L'ILLUMINATION SUR LES SYSTEMES METAL-ISOLANT SEMICONDUCTEUR"J.OLIVIER *
POTENTIAL") *
REVUE AMERICAINE IBM *
REVUE FRANCAISE REVUE TECHNIQUE THOMSON-CSF VOL.1,MARS 1969,PAGES 19-39"INFLUENCE DE *
TECHNICAL DISCLOSURE BULLETIN VOL.9,DEC.1967,PAGE 931"INSULATED ELECTRODE OF ADJUSTABLE *

Also Published As

Publication number Publication date
DE2139528C3 (de) 1980-11-20
NL7110738A (enrdf_load_stackoverflow) 1972-02-09
DE2139528A1 (de) 1972-03-09
FR2101023B1 (enrdf_load_stackoverflow) 1973-11-23
DE2139528B2 (de) 1980-03-27
GB1364275A (en) 1974-08-21

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