GB1359586A - Circuit arrangements employing a gunn-effect semi-conductor component - Google Patents

Circuit arrangements employing a gunn-effect semi-conductor component

Info

Publication number
GB1359586A
GB1359586A GB276472A GB276472A GB1359586A GB 1359586 A GB1359586 A GB 1359586A GB 276472 A GB276472 A GB 276472A GB 276472 A GB276472 A GB 276472A GB 1359586 A GB1359586 A GB 1359586A
Authority
GB
United Kingdom
Prior art keywords
gunn
doping
cathode
circuit arrangements
conductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB276472A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of GB1359586A publication Critical patent/GB1359586A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10N80/107—Gunn diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
GB276472A 1971-03-16 1972-01-20 Circuit arrangements employing a gunn-effect semi-conductor component Expired GB1359586A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2112683A DE2112683C3 (de) 1971-03-16 1971-03-16 Schaltanordnung mit einem Halbleiterbauelement aus Gunn Effekt-Material

Publications (1)

Publication Number Publication Date
GB1359586A true GB1359586A (en) 1974-07-10

Family

ID=5801743

Family Applications (1)

Application Number Title Priority Date Filing Date
GB276472A Expired GB1359586A (en) 1971-03-16 1972-01-20 Circuit arrangements employing a gunn-effect semi-conductor component

Country Status (2)

Country Link
DE (1) DE2112683C3 (de)
GB (1) GB1359586A (de)

Also Published As

Publication number Publication date
DE2112683A1 (de) 1972-09-28
DE2112683B2 (de) 1974-02-14
DE2112683C3 (de) 1974-09-12

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees