GB1349219A - Process for obtaining diffused semiconductor regions having a reduced number of crystal defects - Google Patents

Process for obtaining diffused semiconductor regions having a reduced number of crystal defects

Info

Publication number
GB1349219A
GB1349219A GB3474472A GB3474472A GB1349219A GB 1349219 A GB1349219 A GB 1349219A GB 3474472 A GB3474472 A GB 3474472A GB 3474472 A GB3474472 A GB 3474472A GB 1349219 A GB1349219 A GB 1349219A
Authority
GB
United Kingdom
Prior art keywords
semiconductor regions
reduced number
crystal defects
diffused semiconductor
obtaining diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3474472A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1349219A publication Critical patent/GB1349219A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
GB3474472A 1971-08-05 1972-07-25 Process for obtaining diffused semiconductor regions having a reduced number of crystal defects Expired GB1349219A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16942871A 1971-08-05 1971-08-05

Publications (1)

Publication Number Publication Date
GB1349219A true GB1349219A (en) 1974-04-03

Family

ID=22615646

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3474472A Expired GB1349219A (en) 1971-08-05 1972-07-25 Process for obtaining diffused semiconductor regions having a reduced number of crystal defects

Country Status (7)

Country Link
JP (1) JPS4826364A (enExample)
BE (1) BE787233A (enExample)
CA (1) CA972083A (enExample)
DE (1) DE2235540A1 (enExample)
FR (1) FR2148205B1 (enExample)
GB (1) GB1349219A (enExample)
IT (1) IT956828B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056168A (en) * 1979-08-01 1981-03-11 Gen Instrument Corp Method of fabricating P-N junction with high breakdown voltage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants
US6426522B1 (en) 1999-06-16 2002-07-30 Sharp Kabushiki Kaisha Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device
US6653248B2 (en) 1999-06-16 2003-11-25 Sharp Kabushiki Kaisha Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device

Also Published As

Publication number Publication date
DE2235540A1 (de) 1973-02-22
CA972083A (en) 1975-07-29
IT956828B (it) 1973-10-10
JPS4826364A (enExample) 1973-04-06
BE787233A (fr) 1972-12-01
FR2148205B1 (enExample) 1977-08-26
FR2148205A1 (enExample) 1973-03-11

Similar Documents

Publication Publication Date Title
AU456871B2 (en) Method of making a semiconductor device
JPS51139269A (en) Method of manufacturing semiconductor element
HK59176A (en) Method of manufacturing a semiconductor device
JPS52144985A (en) Method of producing semiconductor device
IL39225A0 (en) Process for the manufacture of quinones
YU255772A (en) Process for obtaining triazolobenzoxazole and triazolobenzothiazole compounds
CS189585B2 (en) Pantyhose and method of and apparatus for manufacturing the same
ZA721504B (en) Process for manufacturing minute capsules
YU45072A (en) Process for obtaining 3-methylcephalosporans
YU11572A (en) Method of making several transistors from a semiconductor wafer
JPS5246050A (en) Process for manufacture of 22nnpentyll33 *22oxopropyl**11cyclopentanone
YU142879A (en) Process for obtaining thiazoline-azetidinone
YU225972A (en) Process for obtaining complexes of tetracycline with trishydroxy-methyl aminomethane
YU84281A (en) Process for obtaining triazolobenzoxazole and triazolobenzotriazole compounds
GB1349219A (en) Process for obtaining diffused semiconductor regions having a reduced number of crystal defects
ZA721236B (en) Iodoethynyl compounds and a process for their manufacture
KR780000114B1 (en) Process for manufacturing of decapeptide
YU36016B (en) Process for obtaining d-penicillamine
YU267272A (en) Process for obtaining benzyl-pyridyl-amino-ethanol
ZA724729B (en) Method for the manufacturing of a semiconductor device
IL38516A0 (en) Method of making substrates for plants
CA968468A (en) Method of making a semiconductor device
CA970885A (en) Apparatus for diffusing a dopant into a plurality of semi-conductor wafers
GB1342637A (en) Method of making semiconductor devices
IL40512A0 (en) Process and apparatus for manufacturing flat glass

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees