CA972083A - Process for obtaining diffused semiconductor regions having a reduced number of crystal defects - Google Patents
Process for obtaining diffused semiconductor regions having a reduced number of crystal defectsInfo
- Publication number
- CA972083A CA972083A CA147,515A CA147515A CA972083A CA 972083 A CA972083 A CA 972083A CA 147515 A CA147515 A CA 147515A CA 972083 A CA972083 A CA 972083A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor regions
- reduced number
- crystal defects
- diffused semiconductor
- obtaining diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16942871A | 1971-08-05 | 1971-08-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA972083A true CA972083A (en) | 1975-07-29 |
Family
ID=22615646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA147,515A Expired CA972083A (en) | 1971-08-05 | 1972-07-19 | Process for obtaining diffused semiconductor regions having a reduced number of crystal defects |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS4826364A (enExample) |
| BE (1) | BE787233A (enExample) |
| CA (1) | CA972083A (enExample) |
| DE (1) | DE2235540A1 (enExample) |
| FR (1) | FR2148205B1 (enExample) |
| GB (1) | GB1349219A (enExample) |
| IT (1) | IT956828B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2056168A (en) * | 1979-08-01 | 1981-03-11 | Gen Instrument Corp | Method of fabricating P-N junction with high breakdown voltage |
| GB2351390A (en) | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
-
1972
- 1972-06-24 IT IT26201/72A patent/IT956828B/it active
- 1972-07-19 CA CA147,515A patent/CA972083A/en not_active Expired
- 1972-07-20 DE DE2235540A patent/DE2235540A1/de active Pending
- 1972-07-25 GB GB3474472A patent/GB1349219A/en not_active Expired
- 1972-08-02 FR FR7227896A patent/FR2148205B1/fr not_active Expired
- 1972-08-04 BE BE787233A patent/BE787233A/xx unknown
- 1972-08-04 JP JP47078724A patent/JPS4826364A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2235540A1 (de) | 1973-02-22 |
| IT956828B (it) | 1973-10-10 |
| JPS4826364A (enExample) | 1973-04-06 |
| BE787233A (fr) | 1972-12-01 |
| FR2148205B1 (enExample) | 1977-08-26 |
| FR2148205A1 (enExample) | 1973-03-11 |
| GB1349219A (en) | 1974-04-03 |
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