GB1335871A - Diffusion of semiconductors - Google Patents

Diffusion of semiconductors

Info

Publication number
GB1335871A
GB1335871A GB25971A GB25971A GB1335871A GB 1335871 A GB1335871 A GB 1335871A GB 25971 A GB25971 A GB 25971A GB 25971 A GB25971 A GB 25971A GB 1335871 A GB1335871 A GB 1335871A
Authority
GB
United Kingdom
Prior art keywords
silicon
semi
source
conductor
jan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB25971A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1335871A publication Critical patent/GB1335871A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Non-Volatile Memory (AREA)
  • Battery Electrode And Active Subsutance (AREA)
GB25971A 1970-01-12 1971-01-04 Diffusion of semiconductors Expired GB1335871A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US228770A 1970-01-12 1970-01-12

Publications (1)

Publication Number Publication Date
GB1335871A true GB1335871A (en) 1973-10-31

Family

ID=21700080

Family Applications (1)

Application Number Title Priority Date Filing Date
GB25971A Expired GB1335871A (en) 1970-01-12 1971-01-04 Diffusion of semiconductors

Country Status (5)

Country Link
JP (1) JPS4936772B1 (https=)
CA (1) CA967856A (https=)
DE (1) DE2100930A1 (https=)
FR (1) FR2076037B1 (https=)
GB (1) GB1335871A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2930780C2 (de) * 1979-07-28 1982-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur Herstellung eines VMOS-Transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL140657B (nl) * 1968-06-21 1973-12-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting door een diffusiebehandeling en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.

Also Published As

Publication number Publication date
FR2076037B1 (https=) 1975-01-10
JPS4936772B1 (https=) 1974-10-03
CA967856A (en) 1975-05-20
FR2076037A1 (https=) 1971-10-15
DE2100930A1 (de) 1971-07-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee