GB1335871A - Diffusion of semiconductors - Google Patents
Diffusion of semiconductorsInfo
- Publication number
- GB1335871A GB1335871A GB25971A GB25971A GB1335871A GB 1335871 A GB1335871 A GB 1335871A GB 25971 A GB25971 A GB 25971A GB 25971 A GB25971 A GB 25971A GB 1335871 A GB1335871 A GB 1335871A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- semi
- source
- conductor
- jan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000009792 diffusion process Methods 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052785 arsenic Inorganic materials 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000000843 powder Substances 0.000 abstract 2
- 239000002775 capsule Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003303 reheating Methods 0.000 abstract 1
- 239000011863 silicon-based powder Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Non-Volatile Memory (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
1335871 Semi-conductor processing INTERNATIONAL BUSINESS MACHINES CORP 4 Jan 1971 [12 Jan 1970] 259/71 Heading H1K At least two impurities of opposite doping effect which diffuse at different rates are diffused in a closed environment into a semi-conductor body from a homogeneous powdered or granular source comprising a semi-conductor doped with the two impurities. In the embodiment the body is an N-type 5 ohm.cm. silicon wafer partially masked with oxide and the source a powder of boron and arsenic doped silicon. Diffusion takes place at 1000‹ C. over a period of 85 minutes. To ensure consistency of the impurity vapour pressures throughout the diffusion period the source is preferably prepared by mixing finely divided boron and silicon and heating together for 50 hours, diffusing arsenic into silicon powder in a two chamber capsule, then mixing the resulting powders and reheating for 50 hours. Other less effective methods of preparing sources are described.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US228770A | 1970-01-12 | 1970-01-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1335871A true GB1335871A (en) | 1973-10-31 |
Family
ID=21700080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB25971A Expired GB1335871A (en) | 1970-01-12 | 1971-01-04 | Diffusion of semiconductors |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4936772B1 (en) |
| CA (1) | CA967856A (en) |
| DE (1) | DE2100930A1 (en) |
| FR (1) | FR2076037B1 (en) |
| GB (1) | GB1335871A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2930780C2 (en) * | 1979-07-28 | 1982-05-27 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Method of manufacturing a VMOS transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL140657B (en) * | 1968-06-21 | 1973-12-17 | Philips Nv | PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE BY A DIFFUSION TREATMENT AND SEMICONDUCTOR DEVICE MANUFACTURED IN ACCORDANCE WITH THIS PROCESS. |
-
1970
- 1970-12-17 FR FR7047127A patent/FR2076037B1/fr not_active Expired
- 1970-12-18 JP JP11320670A patent/JPS4936772B1/ja active Pending
-
1971
- 1971-01-04 GB GB25971A patent/GB1335871A/en not_active Expired
- 1971-01-11 DE DE19712100930 patent/DE2100930A1/en active Pending
- 1971-01-12 CA CA102,479A patent/CA967856A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2076037B1 (en) | 1975-01-10 |
| JPS4936772B1 (en) | 1974-10-03 |
| FR2076037A1 (en) | 1971-10-15 |
| DE2100930A1 (en) | 1971-07-29 |
| CA967856A (en) | 1975-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |