GB1330913A - Integrated semiconductor structures - Google Patents

Integrated semiconductor structures

Info

Publication number
GB1330913A
GB1330913A GB1397671A GB1397671A GB1330913A GB 1330913 A GB1330913 A GB 1330913A GB 1397671 A GB1397671 A GB 1397671A GB 1397671 A GB1397671 A GB 1397671A GB 1330913 A GB1330913 A GB 1330913A
Authority
GB
United Kingdom
Prior art keywords
zone
emitter
control
collector
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1397671A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19702027127 external-priority patent/DE2027127C3/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1330913A publication Critical patent/GB1330913A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

1330913 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 10 May 1971 [8 June 1970] 13976/71 Heading H1K An integrated circuit includes a plurality of lateral transistors disposed in a substrate 20 which serves as a common base region for each of the devices, each device comprising a diffused emitter zone E1, E2, a diffused collector zone C1, C2 and in addition a diffused control zone C1<SP>1</SP>, C2<SP>1</SP> of the same conductivity type as the collector zone. The emitter zones of the devices are connected to a common current source 21, and switches S1, S2, are provided to selectively connect the control zone C1<SP>1</SP>, C2<SP>1</SP> of each device to a control potential so that in use current flows from the emitter zone to either the collector zone or the control zone. In each device the collector zone may partially surround the control zone with the emitter zone being disposed in a gap in the collector zone, or the zones may be concentric with the emitter surrounded by the control zone which is in turn surrounded by the collector zone, Fig. 1b, not shown. Further, transistors may be arranged as symmetrical pairs having control zones and collectors arranged on either side of a common emitter. A highly doped zone of the same conductivity type as the substrate may be formed adjacent to all sides of the emitter zone except the side or sides facing a control zone to prevent the direct migration of injected holes to the collector zone.
GB1397671A 1970-06-03 1971-05-10 Integrated semiconductor structures Expired GB1330913A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702027127 DE2027127C3 (en) 1970-06-03 Plenary integrated semiconductor circuit

Publications (1)

Publication Number Publication Date
GB1330913A true GB1330913A (en) 1973-09-19

Family

ID=5772850

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1397671A Expired GB1330913A (en) 1970-06-03 1971-05-10 Integrated semiconductor structures

Country Status (5)

Country Link
JP (1) JPS5010107B1 (en)
CA (1) CA949682A (en)
FR (1) FR2109579A5 (en)
GB (1) GB1330913A (en)
NL (1) NL169935C (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190175U (en) * 1982-06-11 1983-12-17 カ−スル産業株式会社 phone number quick checker

Also Published As

Publication number Publication date
JPS5010107B1 (en) 1975-04-18
FR2109579A5 (en) 1972-05-26
DE2027127B2 (en) 1975-05-28
DE2027127A1 (en) 1971-12-09
NL7106625A (en) 1971-12-07
CA949682A (en) 1974-06-18
NL169935B (en) 1982-04-01
NL169935C (en) 1982-09-01

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee