GB1327713A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
GB1327713A
GB1327713A GB4889671A GB4889671A GB1327713A GB 1327713 A GB1327713 A GB 1327713A GB 4889671 A GB4889671 A GB 4889671A GB 4889671 A GB4889671 A GB 4889671A GB 1327713 A GB1327713 A GB 1327713A
Authority
GB
United Kingdom
Prior art keywords
channel
polycrystalline
zone
dopant
channels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4889671A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1327713A publication Critical patent/GB1327713A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901Materials
    • H10P14/2902Materials being Group IVA materials
    • H10P14/2905Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34Deposited materials, e.g. layers
    • H10P14/3402Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411Silicon, silicon germanium or germanium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/021Manufacture or treatment of interconnections within wafers or substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
GB4889671A 1970-10-27 1971-10-21 Integrated circuits Expired GB1327713A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2052714A DE2052714C3 (de) 1970-10-27 1970-10-27 Verfahren zum Herstellen einer integrierten Halbleiteranordnung

Publications (1)

Publication Number Publication Date
GB1327713A true GB1327713A (en) 1973-08-22

Family

ID=5786291

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4889671A Expired GB1327713A (en) 1970-10-27 1971-10-21 Integrated circuits

Country Status (4)

Country Link
DE (1) DE2052714C3 (https=)
FR (1) FR2111854B1 (https=)
GB (1) GB1327713A (https=)
NL (1) NL7114723A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284189A1 (fr) * 1974-09-03 1976-04-02 Radiotechnique Compelec Procede de depot de materiau semi-conducteur polycristallin

Also Published As

Publication number Publication date
DE2052714A1 (de) 1972-05-04
FR2111854B1 (https=) 1977-01-28
FR2111854A1 (https=) 1972-06-09
DE2052714C3 (de) 1978-03-16
NL7114723A (https=) 1972-05-02
DE2052714B2 (de) 1977-07-21

Similar Documents

Publication Publication Date Title
US5565697A (en) Semiconductor structure having island forming grooves
US3293087A (en) Method of making isolated epitaxial field-effect device
US3484662A (en) Thin film transistor on an insulating substrate
JP2539777B2 (ja) 半導体素子の形成方法
US5173446A (en) Semiconductor substrate manufacturing by recrystallization using a cooling medium
USRE36311E (en) Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
GB991267A (en) Hermetically sealed semiconductor devices
GB1263617A (en) Semiconductor devices and methods of making the same
US3335341A (en) Diode structure in semiconductor integrated circuit and method of making the same
GB1364676A (en) Semiconductor integrated device
US3945857A (en) Method for fabricating double-diffused, lateral transistors
US3440114A (en) Selective gold doping for high resistivity regions in silicon
US3595714A (en) Method of manufacturing a semiconductor device comprising a field-effect transistor
US3412295A (en) Monolithic structure with three-region complementary transistors
GB1327713A (en) Integrated circuits
US3909318A (en) Method of forming complementary devices utilizing outdiffusion and selective oxidation
GB1533156A (en) Semiconductor integrated circuits
US3510736A (en) Integrated circuit planar transistor
US3711940A (en) Method for making mos structure with precisely controlled channel length
US3431472A (en) Palladium ohmic contact to silicon semiconductor
EP0243034A3 (en) Programmable bonding pad
JPS5499580A (en) Semiconductor integrated circuit device
US3815223A (en) Method for making semiconductor structure with dielectric and air isolation
JPS59182565A (ja) 半導体装置の製造方法および半導体装置
US3409482A (en) Method of making a transistor with a very thin diffused base and an epitaxially grown emitter

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee