GB1324416A - Electric memory or storage device - Google Patents

Electric memory or storage device

Info

Publication number
GB1324416A
GB1324416A GB4014570A GB4014570A GB1324416A GB 1324416 A GB1324416 A GB 1324416A GB 4014570 A GB4014570 A GB 4014570A GB 4014570 A GB4014570 A GB 4014570A GB 1324416 A GB1324416 A GB 1324416A
Authority
GB
United Kingdom
Prior art keywords
resin
chlorinated
voltage
current
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4014570A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1324416A publication Critical patent/GB1324416A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Adjustable Resistors (AREA)
  • Thermistors And Varistors (AREA)
GB4014570A 1969-08-21 1970-08-20 Electric memory or storage device Expired GB1324416A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44066982A JPS492950B1 (enrdf_load_stackoverflow) 1969-08-21 1969-08-21

Publications (1)

Publication Number Publication Date
GB1324416A true GB1324416A (en) 1973-07-25

Family

ID=13331720

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4014570A Expired GB1324416A (en) 1969-08-21 1970-08-20 Electric memory or storage device
GB4014670A Expired GB1324417A (en) 1969-08-21 1970-08-20 Process of switching electrical current

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB4014670A Expired GB1324417A (en) 1969-08-21 1970-08-20 Process of switching electrical current

Country Status (5)

Country Link
JP (1) JPS492950B1 (enrdf_load_stackoverflow)
DE (2) DE2042099C3 (enrdf_load_stackoverflow)
FR (2) FR2058109A5 (enrdf_load_stackoverflow)
GB (2) GB1324416A (enrdf_load_stackoverflow)
NL (2) NL151539B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0362308A4 (en) * 1988-01-11 1991-09-04 Karen P. Shrier Overvoltage protection device and material

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE795843A (fr) * 1972-02-25 1973-08-23 Storry Smithson & Co Ltd Perfectionnements relatifs a un systeme de protection cathodique
CH557081A (de) * 1972-12-22 1974-12-13 Ibm Bistabiler widerstand mit von aeusserer energiezufuhr unabhaengigen zustaenden.
DE3245589A1 (de) * 1982-12-09 1984-06-14 Hoechst Ag, 6230 Frankfurt Unvernetzbare, elektrisch leitfaehige formmassen auf der basis von thermoplastischen kunststoffen und russ
US4992333A (en) * 1988-11-18 1991-02-12 G&H Technology, Inc. Electrical overstress pulse protection
WO2002103436A2 (en) * 2001-06-20 2002-12-27 Citala Ltd. Thin planar switches and their applications

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3359521A (en) * 1965-10-26 1967-12-19 Cognitronics Corp Bistable resistance memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0362308A4 (en) * 1988-01-11 1991-09-04 Karen P. Shrier Overvoltage protection device and material

Also Published As

Publication number Publication date
FR2058109A5 (enrdf_load_stackoverflow) 1971-05-21
DE2042099A1 (de) 1971-05-13
DE2042111C3 (de) 1975-05-22
JPS492950B1 (enrdf_load_stackoverflow) 1974-01-23
FR2063139A1 (enrdf_load_stackoverflow) 1971-07-09
NL151538B (nl) 1976-11-15
GB1324417A (en) 1973-07-25
DE2042099B2 (de) 1974-05-22
NL7012435A (enrdf_load_stackoverflow) 1971-02-23
DE2042111A1 (de) 1971-04-22
NL151539B (nl) 1976-11-15
DE2042099C3 (de) 1975-01-02
NL7012436A (enrdf_load_stackoverflow) 1971-02-23
FR2063139B1 (enrdf_load_stackoverflow) 1974-06-14
DE2042111B2 (de) 1972-07-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years