GB1321288A - Method of photolithographical processing of semiconductor wafers - Google Patents
Method of photolithographical processing of semiconductor wafersInfo
- Publication number
- GB1321288A GB1321288A GB3235170A GB3235170A GB1321288A GB 1321288 A GB1321288 A GB 1321288A GB 3235170 A GB3235170 A GB 3235170A GB 3235170 A GB3235170 A GB 3235170A GB 1321288 A GB1321288 A GB 1321288A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glass
- substrate
- chalk
- enamel
- july
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Glass Compositions (AREA)
Abstract
1321288 Glass coated with glass or enamel WESTINGHOUSE ELECTRIC CORP 3 July 1970 [23 July 1969] 32351/70 Heading C1M [Also in Division G2] Durable photolithographic masks for semiconductor manufacture are prepared by applying a pattern of glass-forming material to the surface of a visually transparent substrate, and fusing this material into the substrate to form a transparent glass image pattern of contrasting colour to the substrate. Preferably the substrate is glass, and the glass-forming material is a glass slip, stain, ink or enamel which is applied by a silk screen or through the apertures of a photoresist image (e.g. composed of carbonized photographic emulsion, chalk or a mixture of chalk and photoresist). Suitable glass slips comprise at least 10% Fe, 0�1% Si, 0�1% Mg, 10% Cu, 0�05% Zr, 0�05% Al, 5% Ca, 0�1% Pb, 15% or 20-25% Ag and 0�1% Zn as oxides or carbonates and are fused at 366-374� C. The glass substrate and glass slip should have closely similar coefficients of thermal expansion.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84414169A | 1969-07-23 | 1969-07-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1321288A true GB1321288A (en) | 1973-06-27 |
Family
ID=25291929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3235170A Expired GB1321288A (en) | 1969-07-23 | 1970-07-03 | Method of photolithographical processing of semiconductor wafers |
Country Status (3)
Country | Link |
---|---|
CA (1) | CA949799A (en) |
FR (1) | FR2055489A5 (en) |
GB (1) | GB1321288A (en) |
-
1970
- 1970-06-01 CA CA084,195A patent/CA949799A/en not_active Expired
- 1970-07-03 GB GB3235170A patent/GB1321288A/en not_active Expired
- 1970-07-22 FR FR7027075A patent/FR2055489A5/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA949799A (en) | 1974-06-25 |
FR2055489A5 (en) | 1971-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |