GB1320594A - Manufacture of semi-conductor devices - Google Patents

Manufacture of semi-conductor devices

Info

Publication number
GB1320594A
GB1320594A GB4567471A GB4567471A GB1320594A GB 1320594 A GB1320594 A GB 1320594A GB 4567471 A GB4567471 A GB 4567471A GB 4567471 A GB4567471 A GB 4567471A GB 1320594 A GB1320594 A GB 1320594A
Authority
GB
United Kingdom
Prior art keywords
manufacture
film
electrodes
sept
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4567471A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1320594A publication Critical patent/GB1320594A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

1320594 Electrode deposition for semiconductor devices SIEMENS AG 30 Sept 1971 [30 Sept 1970] 45674/71 Heading H1K An electrode metal (aluminium, magnesium, or titanium) is vapour deposited onto an insulating film (silica or alumina) on a semiconductor body at a uniform rate sufficiently high that the deposit grows at least 100 A/sec. The body and film may be maintained at a temperature in the range 150-300‹ C. during the process. The process is used in the manufacture of the gate electrodes of IGFETs or of contact electrodes (which extend also over the film) in diodes and bipolar transistors or of electrodes in integrated circuits.
GB4567471A 1970-09-30 1971-09-30 Manufacture of semi-conductor devices Expired GB1320594A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702047951 DE2047951C3 (en) 1970-09-30 1970-09-30 Method for manufacturing a semiconductor component

Publications (1)

Publication Number Publication Date
GB1320594A true GB1320594A (en) 1973-06-13

Family

ID=5783733

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4567471A Expired GB1320594A (en) 1970-09-30 1971-09-30 Manufacture of semi-conductor devices

Country Status (9)

Country Link
BE (1) BE773195A (en)
CA (1) CA922819A (en)
CH (1) CH528820A (en)
DE (1) DE2047951C3 (en)
FR (1) FR2108115B1 (en)
GB (1) GB1320594A (en)
IT (1) IT938833B (en)
LU (1) LU63976A1 (en)
NL (1) NL7111383A (en)

Also Published As

Publication number Publication date
DE2047951A1 (en) 1972-04-06
DE2047951C3 (en) 1980-02-14
DE2047951B2 (en) 1979-06-13
CH528820A (en) 1972-09-30
IT938833B (en) 1973-02-10
NL7111383A (en) 1972-04-05
CA922819A (en) 1973-03-13
LU63976A1 (en) 1972-03-01
BE773195A (en) 1972-01-17
FR2108115B1 (en) 1977-04-22
FR2108115A1 (en) 1972-05-12

Similar Documents

Publication Publication Date Title
FR2097133B1 (en)
GB1374626A (en) Method of making a semiconductor device
GB1334998A (en) Encapsulation of electronic devices
GB1160213A (en) A Method of Growing Semiconductor Crystals
GB1225088A (en)
GB1320594A (en) Manufacture of semi-conductor devices
GB1070303A (en) Production method of semiconductor devices
JPS5246784A (en) Process for production of semiconductor device
GB1073069A (en) Process for producing a superconductor
GB1343843A (en) Electrical resistance element wirh a semiconductor overlay and method of fabrication thereof
GB1190992A (en) Improved method of Depositing Semiconductor Material
GB998199A (en) Improvements in or relating to the manufacture of semiconductor devices
GB989502A (en) Silicon-containing heating element bodies
GB1389326A (en) Method for producing thin film circuits
GB1291209A (en) Improvements in or relating to the production of contact metal layers in semiconductor components
JPS5615070A (en) Semiconductor device
GB1312464A (en) Method of preventing a chemical reaction between aluminium and silicon dioxide in a semiconductor device
GB1260070A (en) Furnace tube for processing semiconductor devices
JPS5662339A (en) Production of semiconductor device
NL6613670A (en)
GB1196237A (en) Improvements relating to the Metallization of Semiconductor Devices
CA959383A (en) Thick oxide process for improving metal deposition and stability of semiconductor devices
GB1083522A (en) Boron nitride thin film device and process for making same
JPH01207971A (en) Tungsten gate mos fet
GB1019332A (en) A process for use in the production of a semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees